公开(公告)号：WO2020234028A1

公开(公告)日：2020-11-26

申请号：PCT/EP2020/063077

申请日：2020-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： SMORENBERG, Pieter, Gerardus, Jacobus ,  SAPUTRA, Putra ,  ELBATTAY, Khalid ,  DERWIN, Paul ,  WERKMAN, Roy ,  JENSEN, Erik ,  YU, Hyun-Woo ,  SARMA, Gautam

IPC: G03F7/20

Abstract: The invention provides a method for determining a sampling scheme, which method comprises: - obtaining a first fingerprint model relating to a first spatial distribution of a performance parameter over a first portion of a semiconductor substrate and a second fingerprint model relating to a second spatial distribution of said performance parameter over a second portion of the semiconductor substrate; and - determining a sampling point corresponding to a measuring location on the semiconductor substrate for generating measurement data based on an expected reduction of a first uncertainty metric associated with evaluation of the first fingerprint model over the first portion and an expected reduction of a second uncertainty metric associated with evaluation of the second fingerprint model over the second portion.

公开(公告)号：WO2020108861A1

公开(公告)日：2020-06-04

申请号：PCT/EP2019/078529

申请日：2019-10-21

Applicant: ASML NETHERLANDS B.V.

Inventor： SMAL, Pavel ,  SOCHAL, Inez, Marlena ,  SARMA, Gautam

IPC: G03F7/20 ,  G03F9/00

Abstract: A method for determining a layout of mark positions across a patterning device or substrate, the method comprising: a) obtaining (502) a model configured to model data associated with measurements performed on the patterning device or substrate at one or more mark positions; b) obtaining (504) an initial mark layout (506) comprising initial mark positions; c) reducing (508) the initial mark layout by removal of one or more mark positions to obtain a plurality of reduced mark layouts (510), each reduced mark layout obtained by removal of a different mark position from the initial mark layout; d) determining (512) a model uncertainty metric associated with usage of the model for each reduced mark layout out of said plurality of reduced mark layouts; and e) selecting (514) one or more reduced mark layouts (516) based on its associated model uncertainty metric.