公开(公告)号：WO2017153171A1

公开(公告)日：2017-09-14

申请号：PCT/EP2017/054053

申请日：2017-02-22

Applicant: ASML NETHERLANDS B.V.

Inventor： SCHMITT-WEAVER, Emil, Peter ,  ISMAIL, Amir, Bin ,  BHATTACHARYYA, Kaustuve ,  DERWIN, Paul

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70625 ,  G03F9/7088 ,  G03F9/7092

Abstract: Corrections (CPE) are calculated for use in controlling a lithographic apparatus (100). Using a metrology apparatus (140) a performance parameter is measured (200) at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted (210) to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated (230) for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data (312) is available, this is added (240) to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate (316) which is a combination of values (318) estimated by the process model and partly on real measurement data (312).

Abstract translation: 校正（CPE）被计算用于控制光刻设备（100）。 使用度量衡装置（140），在先前已应用光刻过程的一个或多个衬底上的采样位置处测量（200）性能参数。 将过程模型拟合（210）到所测量的性能参数，并且为整个衬底上的过程引起的效应提供上采样估计。 计算（230）用于控制光刻设备的校正，使用致动模型并且至少部分地基于拟合过程模型。 对于测量数据（312）可用的位置，将其添加（240）到估计以替换过程模型值。 因此，致动修正的计算基于修正的估计（316），该修正的估计（316）是由过程模型估计的值（318）和部分基于实际测量数据（312）的值的组合（318）。

公开(公告)号：WO2020212068A1

公开(公告)日：2020-10-22

申请号：PCT/EP2020/057687

申请日：2020-03-19

Applicant: ASML NETHERLANDS B.V.

Inventor： HAUPTMANN, Marc ,  ISMAIL, Amir, Bin ,  RAHMAN, Rizvi ,  LI, Jiapeng

IPC: G03F7/20 ,  G05B19/418 ,  H01L21/66

Abstract: There is disclosed a method for generating a sampling scheme for a device manufacturing process, the method comprising: obtaining a measurement data time series of a plurality of processed substrates; transforming the measurement data time series to obtain frequency domain data; determining, using the frequency domain data, a temporal sampling scheme; determining an error offset introduced by the temporal sampling scheme on the basis of measurements on substrates performed according to the temporal sampling scheme; and determining an improved temporal sampling scheme to compensate said error offset.

公开(公告)号：WO2021032376A1

公开(公告)日：2021-02-25

申请号：PCT/EP2020/070151

申请日：2020-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： HAUPTMANN, Marc ,  LAMBREGTS, Cornelis, Johannes, Henricus ,  ISMAIL, Amir, Bin ,  RAHMAN, Rizvi ,  BOUSTHEEN, Allwyn ,  PISHKARI, Raheleh ,  MOS, Everhardus, Cornelis ,  VIATKINA, Ekaterina, Mikhailovna ,  WERKMAN, Roy ,  BRINKHOF, Ralph

IPC: G03F7/20

Abstract: A method of controlling a semiconductor manufacturing process, the method comprising: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at leastone additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.