公开(公告)号：WO2020234028A1

公开(公告)日：2020-11-26

申请号：PCT/EP2020/063077

申请日：2020-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： SMORENBERG, Pieter, Gerardus, Jacobus ,  SAPUTRA, Putra ,  ELBATTAY, Khalid ,  DERWIN, Paul ,  WERKMAN, Roy ,  JENSEN, Erik ,  YU, Hyun-Woo ,  SARMA, Gautam

IPC: G03F7/20

Abstract: The invention provides a method for determining a sampling scheme, which method comprises: - obtaining a first fingerprint model relating to a first spatial distribution of a performance parameter over a first portion of a semiconductor substrate and a second fingerprint model relating to a second spatial distribution of said performance parameter over a second portion of the semiconductor substrate; and - determining a sampling point corresponding to a measuring location on the semiconductor substrate for generating measurement data based on an expected reduction of a first uncertainty metric associated with evaluation of the first fingerprint model over the first portion and an expected reduction of a second uncertainty metric associated with evaluation of the second fingerprint model over the second portion.

公开(公告)号：WO2021175527A1

公开(公告)日：2021-09-10

申请号：PCT/EP2021/052492

申请日：2021-02-03

Applicant: ASML NETHERLANDS B.V.

Inventor： TEN BERGE, Peter ,  STEEN, Steven, Erik ,  SMORENBERG, Pieter, Gerardus, Jacobus ,  ELBATTAY, Khalid

IPC: G03F7/20 ,  H01L21/762 ,  H01L21/20 ,  H01L23/00 ,  H01L21/18

Abstract: Disclosed is a method for controlling a process of manufacturing semiconductor devices, the method comprising: obtaining a first control grid associated with a first lithographic apparatus used for a first patterning process for patterning a first substrate; obtaining a second control grid associated with a second lithographic apparatus used for a second patterning process for patterning a second substrate; based on the first control grid and second control grid, determining a common control grid definition for a bonding step for bonding the first substrate and second substrate to obtain a bonded substrate; obtaining bonded substrate metrology data comprising data relating to metrology performed on the bonded substrate; and determining a correction for performance of the bonding step based on said bonded substrate metrology data, the determining a correction comprising determining a co-optimized correction for the bonding step and for the first patterning process and/or second patterning process.

公开(公告)号：WO2021001129A1

公开(公告)日：2021-01-07

申请号：PCT/EP2020/066108

申请日：2020-06-10

Applicant: ASML NETHERLANDS B.V.

Inventor： SMORENBERG, Pieter, Gerardus, Jacobus ,  SAPUTRA, Putra ,  DERWIN, Paul ,  ELBATTAY, Khalid

IPC: G03F7/20

Abstract: Disclosed is a method for determining an intra-field correction for control of a lithographic apparatus configured for exposing a pattern on an exposure field of a substrate, the method comprising: obtaining metrology data for use in determining the intra-field correction; determining an accuracy metric indicating a lower accuracy where the metrology data is not reliable and/or where the lithographic apparatus is limited in actuating a potential actuation input which is based on the metrology data; and determining said intra-field correction based at least partially on said accuracy metric.