公开(公告)号：WO2016096333A1

公开(公告)日：2016-06-23

申请号：PCT/EP2015/077482

申请日：2015-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Peng

IPC: G03F7/20

CPC classification number: G06F17/5036 ,  G03F7/70416 ,  G03F7/70433 ,  G03F7/705 ,  G03F7/70941 ,  G06F2217/12

Abstract: Disclosed herein is a computer-implemented method of image simulation for a device manufacturing process, the method comprising: identifying regions of uniform optical properties from a portion or an entirety of a substrate or a patterning device, wherein optical properties are uniform within each of the regions; obtaining an image for each of the regions, wherein the image is one that would be formed from the substrate if the entirety of the substrate or the patterning device has the same uniform optical properties as that region; forming a stitched image by stitching the image for each of the regions according to locations of the regions in the portion or the entirety of the substrate of the patterning device; forming an adjusted image by applying adjustment to the stitched image for at least partially correcting for or at least partially imitating an effect of finite sizes of the regions.

Abstract translation: 本文公开了一种用于设备制造过程的计算机实现的图像模拟方法，该方法包括：从基板或图案形成装置的一部分或全部识别均匀光学特性的区域，其中光学特性在每个 区域; 获得每个区域的图像，其中如果整个基板或图案形成装置具有与该区域相同的均匀光学特性，则图像是将从基板形成的图像; 通过根据图案形成装置的基板的部分或全部中的区域的位置，针对每个区域拼接图像来形成缝合图像; 通过对缝合图像进行调整以至少部分地校正或至少部分地模仿有限尺寸的区域的效果来形成调整图像。

公开(公告)号：WO2016146355A1

公开(公告)日：2016-09-22

申请号：PCT/EP2016/053877

申请日：2016-02-24

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Peng

IPC: G03F7/20

CPC classification number: G03F7/70608 ,  G03F7/705

Abstract: Disclosed herein is a computer-implemented method comprising: obtaining at least a characteristic of deformation of a resist layer (1050) in a first direction, as if there were no deformation in any directions perpendicular to the first direction; obtaining at least a characteristic of deformation of the resist layer in a second direction as if there were no deformation in the first direction, the second direction being perpendicular different to from the first direction; obtaining at least a characteristic of three-dimensional deformation of the resist layer based on the characteristic of the deformation in the first direction and the characteristic of the deformation in the second direction.

Abstract translation: 本文公开了一种计算机实现的方法，包括：至少获得抗蚀剂层（1050）在第一方向上的变形特性，就好像在垂直于第一方向的任何方向上没有变形; 在第二方向获得抗蚀剂层的变形的至少特征，就好像第一方向上没有变形，第二方向垂直于与第一方向垂直的方向; 基于第一方向的变形特性和第二方向的变形特性，至少获得抗蚀剂层的三维变形特性。

公开(公告)号：WO2018206275A1

公开(公告)日：2018-11-15

申请号：PCT/EP2018/060243

申请日：2018-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Peng

IPC: G03F7/20 ,  G06F17/50

Abstract: A method, including: obtaining a set of conditions for a resist development model for simulating a resist development process of a resist layer; and performing, by a hardware computer system, a computer simulation of the resist development process using the set of conditions and the resist development model to obtain a characteristic of the development of the resist layer, wherein the computer simulation separately simulates different certain different physical and chemical processes and characteristics of the resist development process.

公开(公告)号：WO2014127985A1

公开(公告)日：2014-08-28

申请号：PCT/EP2014/052109

申请日：2014-02-04

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Peng

IPC: G03F7/20 ,  G03F1/36

CPC classification number: G03F7/7055 ,  G03F7/70441 ,  G03F7/705

Abstract: Disclosed herein is a computer-implemented method for simulating a scattered radiation field of a patterning device comprising one or more features, in a lithographic projection apparatus, the method comprising: determining a scattering function of the patterning device using one or more scattering functions of feature elements of the one or more features; wherein at least one of the one or more features is a three-dimensional feature, or the one or more scattering functions characterize scattering of incident radiation fields at a plurality of incident angles on the feature elements.

Abstract translation: 本文公开了一种用于模拟包括一个或多个特征的图案形成装置的散射辐射场的计算机实现的方法，在光刻投影装置中，该方法包括：使用特征的一个或多个散射函数来确定图案形成装置的散射函数 一个或多个特征的元素; 其中所述一个或多个特征中的至少一个是三维特征，或者所述一个或多个散射函数表征在所述特征元件上的多个入射角处的入射辐射场的散射。

公开(公告)号：WO2018153735A1

公开(公告)日：2018-08-30

申请号：PCT/EP2018/053589

申请日：2018-02-13

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Peng ,  LUO, Ya ,  CAO, Yu ,  LU, Yen-Wen

IPC: G03F7/20 ,  G06F17/50

Abstract: A method including: obtaining characteristics of a portion of a design layout; determining characteristics of M3D of a patterning device including or forming the portion; by using a computer, training a neural network using training data including a sample whose feature vector includes the characteristics of the portion and whose supervisory signal comprises the characteristics of the M3D. Also disclosed is a method including: obtaining characteristics of a portion of a design layout; obtaining characteristics of a lithographic process that uses a patterning device including or forming the portion; determining characteristics of a result of the lithographic process; by using a computer, training a neural network using training data including a sample whose feature vector comprises the characteristics of the portion and the characteristics of the lithographic process, and whose supervisory signal comprises the characteristics of the result.

公开(公告)号：WO2018121967A1

公开(公告)日：2018-07-05

申请号：PCT/EP2017/081744

申请日：2017-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： CAO, Yu ,  LU, Yen-Wen ,  LIU, Peng ,  HOWELL, Rafael C. ,  BISWAS, Roshni

IPC: G03F7/20 ,  G03F1/36

Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.