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    MACHINE LEARNING BASED SUBRESOLUTION ASSIST FEATURE PLACEMENT
    2.
    发明申请
    MACHINE LEARNING BASED SUBRESOLUTION ASSIST FEATURE PLACEMENT 审中-公开

    公开(公告)号：WO2021175570A1

    公开(公告)日：2021-09-10

    申请号：PCT/EP2021/053569

    申请日：2021-02-12

    Applicant: ASML NETHERLANDS B.V.

    Inventor： TAO, Jun ,  CAO, Yu ,  SPENCE, Christopher, Alan

    IPC: G03F1/36

    Abstract: A method for training a machine learning model to generate a characteristic pattern includes obtaining training data associated with a reference feature in a reference image. The training data includes (i) location data of each portion of the reference feature, and (ii) a presence value indicating whether the portion of the reference feature is located within a reference assist feature generated for the reference feature. The method includes training the machine learning model to predict a presence value based on the actual presence value in the training data. The predicted presence value indicates whether a portion of a feature (e.g., a skeleton point on a skeleton of a contour of the feature) is to be covered by an assist feature set. The training is performed based on the training data such that a metric between a predicted presence value and the presence value is minimized.

    METHOD FOR DETERMINING A MASK PATTERN COMPRISING OPTICAL PROXIMITY CORRECTIONS USING A TRAINED MACHINE LEARNING MODEL
    3.
    发明申请
    METHOD FOR DETERMINING A MASK PATTERN COMPRISING OPTICAL PROXIMITY CORRECTIONS USING A TRAINED MACHINE LEARNING MODEL 审中-公开

    公开(公告)号：WO2021160522A1

    公开(公告)日：2021-08-19

    申请号：PCT/EP2021/052724

    申请日：2021-02-04

    Applicant: ASML NETHERLANDS B.V.

    Inventor： CAO, Yu ,  TAO, Jun ,  ZHANG, Quan ,  SHU, Yongsheng ,  FONG, Wei-chun

    IPC: G03F1/36 ,  G03F7/20

    Abstract: Described herein are a method for determining a mask pattern and a method for training a machine learning model. The method for determining a mask pattern includes obtaining, via executing a model using a target pattern to be printed on a substrate as an input pattern, a post optical proximity correction (post-OPC) pattern; determining, based on the post-OPC pattern, a simulated pattern that will be printed on the substrate; and determining the mask pattern based on a difference between the simulated pattern and the target pattern. The determining of the mask pattern includes modifying, based on the difference, the input pattern inputted to the model such that the difference is reduced; and executing, using the modified input pattern, the model to generate a modified post-OPC pattern from which the mask pattern can be derived.

    PRE-SCAN FEATURE DETERMINATION METHODS AND SYSTEMS
    7.
    发明申请
    PRE-SCAN FEATURE DETERMINATION METHODS AND SYSTEMS 审中-公开

    公开(公告)号：WO2019145278A1

    公开(公告)日：2019-08-01

    申请号：PCT/EP2019/051461

    申请日：2019-01-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： CAO, Yu ,  WALLOW, Thomas I. ,  ZHANG, Chen ,  WANG, Jen-Shiang

    IPC: G03F7/20

    Abstract: Systems, methods, and programming are described herein for pre-scan feature determination. In one embodiment, image data representing a plurality of scanning electron microscope ("SEM") images may be obtained, each including a representation of a feature and each being associated with a respective scan of the feature by an SEM. For each image, a parameter associated with each of a plurality of gauge positions may be determined. A change in the parameter from each SEM image to a subsequent SEM image may be determined. For each gauge position, a rate of change for the parameter may be determined based on a difference in a location of the parameter between at least two of the plurality of SEM images. Feature data representing a reconstruction of the feature prior to the SEM being applied may be generated by extrapolating an original location of the parameter based on the parameter's rate of change.

    MASK DEFECT DETECTION
    8.
    发明申请
    MASK DEFECT DETECTION 审中-公开

    公开(公告)号：WO2023016723A1

    公开(公告)日：2023-02-16

    申请号：PCT/EP2022/069169

    申请日：2022-07-08

    Applicant: ASML NETHERLANDS B.V.

    Inventor： WANG, Fuming ,  WIELAND, Marco, Jan-Jaco ,  CAO, Yu ,  ZHANG, Guohong

    IPC: G03F1/86 ,  G03F7/20

    Abstract: An improved methods and systems for detecting defect(s) on a mask are disclosed. An improved method comprises inspecting an exposed wafer after the wafer was exposed, by a lithography system using a mask, with a selected process condition that is determined based on a mask defect printability under the selected process condition; and identifying, based on the inspection, a wafer defect that is caused by a defect on the mask to enable identification of the defect on the mask.

    COMPUTER-READABLE MEDIUM FOR GENERATING ASSIST FEATURES USING MACHINE LEARNING MODEL
    9.
    发明申请
    COMPUTER-READABLE MEDIUM FOR GENERATING ASSIST FEATURES USING MACHINE LEARNING MODEL 审中-公开

    公开(公告)号：WO2022263312A1

    公开(公告)日：2022-12-22

    申请号：PCT/EP2022/065811

    申请日：2022-06-10

    Applicant: ASML NETHERLANDS B.V.

    Inventor： TAO, Jun ,  CAO, Yu ,  SPENCE, Christopher, Alan

    IPC: G03F1/36 ,  G06N20/00 ,  G06N3/02

    Abstract: Described herein is a method of determining assist features for a mask pattern. The method includes obtaining (i) a target pattern comprising a plurality of target features, wherein each of the plurality of target features comprises a plurality of target edges, and (ii) a trained sequence-to- sequence machine leaning (ML) model (e.g., long short term memory, Gated Recurrent Units, etc.) configured to determine sub-resolution assist features (SRAFs) for the target pattern. For a target edge of the plurality of target edges, geometric information (e.g., length, width, distances between features, etc.) of a subset of target features surrounding the target edge is determined. Using the geometric information as input, the ML model generates SRAFs to be placed around the target edge.

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