公开(公告)号：WO2018010928A1

公开(公告)日：2018-01-18

申请号：PCT/EP2017/065346

申请日：2017-06-22

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER LOGT, Léon, Maria, Albertus ,  SEGERS, Bart, Peter, Bert ,  VAN GORP, Simon, Hendrik, Celine ,  LUIJTEN, Carlo, Cornelis, Maria ,  STAALS, Frank

IPC: G03F7/20

Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus needs to be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.

Abstract translation: 光刻工艺是将期望的图案施加到衬底上，通常施加到衬底的目标部分上的工艺。 在光刻过程中，焦点需要被控制。 公开了一种用于确定与基板相关联的性能参数的指纹的方法，例如在光刻工艺期间将使用的焦点值。 性能参数的参考指纹是针对参考基板确定的。 确定参考衬底的参考衬底参数。 确定衬底（例如具有产品结构的衬底）的衬底参数。 随后，基于参考指纹，参考衬底参数和衬底参数来确定性能参数的指纹。 指纹然后可以用来控制光刻过程。

公开(公告)号：WO2020193010A1

公开(公告)日：2020-10-01

申请号：PCT/EP2020/054073

申请日：2020-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank ,  VAN GORP, Simon, Hendrik, Celine

IPC: G03F7/20

Abstract: Disclosed is a method for configuring an apparatus for providing structures to a layer on a substrate, the method comprising: obtaining first data comprising substrate specific data as measured and/or modeled before the providing of the structures to the layer on the substrate; and determining a configuration of the apparatus for at least two different control regimes based on said first data and the use of a common merit function comprising parameters associated with the at least two control regimes.

公开(公告)号：WO2018202361A1

公开(公告)日：2018-11-08

申请号：PCT/EP2018/058096

申请日：2018-03-29

Applicant: ASML NETHERLANDS B.V.

Inventor： YPMA, Alexander ,  TABERY, Cyrus, Emil ,  VAN GORP, Simon, Hendrik, Celine ,  LIN, Chenxi ,  SONNTAG, Dag ,  CEKLI, Hakki, Ergun ,  ALVAREZ SANCHEZ, Ruben ,  LIU, Shih-Chin ,  HASTINGS, Simon, Philip, Spencer ,  MENCHTCHIKOV, Boris ,  DE RUITER, Christiaan, Theodoor ,  TEN BERGE, Peter ,  LERCEL, Michael, James ,  DUAN, Wei ,  GUITTET, Pierre-Yves, Jerome, Yvan

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including measured electrical characteristics from previously processed substrates and process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：WO2019115391A1

公开(公告)日：2019-06-20

申请号：PCT/EP2018/083994

申请日：2018-12-07

Applicant: ASML NETHERLANDS B.V.

Inventor： TABERY, Cyrus, Emil ,  VAN GORP, Simon, Hendrik, Celine ,  HASTINGS, Simon, Philip, Spencer ,  PETERSON, Brennan

IPC: G03F7/20 ,  H01L21/66

Abstract: A measurement mark is disclosed. According to certain embodiments, the measurement mark includes a set of first test structures developed in a first layer on a substrate, each of the set of first test structures comprising a plurality of first features made of first conducting material. The measurement mark also includes a set of second test structures developed in a second layer adjacent to the first layer, each of the set of second test structures comprising a plurality of second features made of second conducting material. The measurement mark is configured to indicate connectivity between the set of first test structures and associated second test structures in the set of second test structures when imaged using a voltage-contrast imaging method.

公开(公告)号：WO2019048137A1

公开(公告)日：2019-03-14

申请号：PCT/EP2018/070605

申请日：2018-07-30

Applicant: ASML NETHERLANDS B.V.

Inventor： TABERY, Cyrus, Emil ,  CEKLI, Hakki, Ergun ,  VAN GORP, Simon, Hendrik, Celine ,  LIN, Chenxi

IPC: G03F7/20 ,  H01L21/66

CPC classification number: G03F7/70525 ,  G03F7/70616 ,  H01L22/12 ,  H01L22/20

Abstract: Disclosed herein is a method for determining a control parameter for an apparatus utilised in a semiconductor manufacturing process, the method comprising: obtaining performance data associated with a substrate subject to the semiconductor manufacturing process; obtaining die specification data comprising values of an expected yield of one or more dies on the substrate based on the performance data and/or a specification for the performance data; and determining the control parameter in dependence on the performance data and the die specification data. Advantageously, the efficiency and accuracy of processes are improved by only determining how to perform the processes in dependence on dies within specification.

公开(公告)号：WO2022161728A1

公开(公告)日：2022-08-04

申请号：PCT/EP2021/087660

申请日：2021-12-24

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN GORP, Simon, Hendrik, Celine ,  VAN REENEN, Stephan

IPC: G03F9/00

Abstract: Disclosed is a method for determining a focus actuation profile for one or more actuators of a lithographic exposure apparatus in control of a lithographic exposure process for exposure of an exposure area comprising at least two topographical levels. The method comprises determining a continuous single focus actuation profile for the at least two topographical levels from an objective function comprising a per-level component operable to optimize a focus metric per topographical level for each of said at least two topographical levels.

公开(公告)号：WO2021001119A1

公开(公告)日：2021-01-07

申请号：PCT/EP2020/065916

申请日：2020-06-09

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN GORP, Simon, Hendrik, Celine ,  VAN DEN BRINK, Arie

IPC: G03F7/20 ,  G03F9/00

Abstract: Apparatus and methods for determining a focus error for a lithographic apparatus and/or a difference between first and second metrology data. The first and/or second metrology data comprising a plurality of values of a parameter relating to a substrate, the substrate including a plurality of fields comprising device topology., Apparatus may comprise a processor configured to execute computer program code to undertake the method of: determining an intra-field component of the parameter; removing the determined intra-field component from the first metrology data to obtain an inter-field component of the first metrology data; and determining the difference between the first metrology data and second metrology data based on the inter-field component and the second metrology data.

公开(公告)号：WO2019063206A1

公开(公告)日：2019-04-04

申请号：PCT/EP2018/072605

申请日：2018-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  MASLOW, Mark, John ,  VAN INGEN SCHENAU, Koenraad ,  WARNAAR, Patrick ,  SLACHTER, Abraham ,  ANUNCIADO, Roy ,  VAN GORP, Simon, Hendrik, Celine ,  STAALS, Frank ,  JOCHEMSEN, Marinus

IPC: G03F7/20

Abstract: Disclosed herein is a method for determining one or more control parameters of a manufacturing process comprising a lithographic process and one or more further processes, the method comprising: obtaining an image of at least part of a substrate, wherein the image comprises at least one feature manufactured on the substrate by the manufacturing process; calculating one or more image-related metrics in dependence on a contour determined from the image, wherein one of the image -related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or said one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.