公开(公告)号：WO2018222613A1

公开(公告)日：2018-12-06

申请号：PCT/US2018/034935

申请日：2018-05-29

Applicant: KLA-TENCOR CORPORATION

Inventor： GELLINEAU, Antonio ,  DZIURA, Thaddeus, Gerard

IPC: G01N23/201 ,  G01B15/00 ,  H01L21/66

CPC classification number: H01L22/20 ,  G01N23/20083 ,  G01N2223/6116 ,  G03F7/70525 ,  G03F7/70616 ,  H01L21/67253 ,  H01L22/12

Abstract: Methods and systems for estimating values of process parameters, structural parameters, or both, based on x-ray scatterometry measurements of high aspect ratio semiconductor structures are presented herein. X-ray scatterometry measurements are performed at one or more steps of a fabrication process flow. The measurements are performed quickly and with sufficient accuracy to enable yield improvement of an on-going semiconductor fabrication process flow. Process corrections are determined based on the measured values of parameters of interest and the corrections are communicated to the process tool to change one or more process control parameters of the process tool. In some examples, measurements are performed while the wafer is being processed to control the on-going fabrication process step. In some examples, X-ray scatterometry measurements are performed after a particular process step and process control parameters are updated for processing of future devices.

公开(公告)号：WO2017186483A1

公开(公告)日：2017-11-02

申请号：PCT/EP2017/058676

申请日：2017-04-11

Applicant: ASML NETHERLANDS B.V.

Inventor： TINNEMANS, Patricius, Aloysius, Jacobus ,  MATHIJSSEN, Simon, Gijsbert, Josephus ,  ROOBOL, Sander, Bas ,  LIN, Nan

IPC: G01N21/95 ,  G01N21/956 ,  H01L21/66 ,  G03F7/20

CPC classification number: G03F7/70616 ,  G01N21/47 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/4704 ,  G01N2021/4735 ,  G01N2021/8822 ,  G01N2021/95615 ,  G01N2201/12 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065 ,  G03F7/70683 ,  G03F9/7003 ,  H01L22/12

Abstract: A structure of interest (T) is irradiated with radiation for example in the x-ray or EUV waveband, and scattered radiation is detected by a detector (19, 274, 908, 1012). A processor (PU) calculates a property such as linewidth (CD) or overlay (OV), for example by simulating (S16) interaction of radiation with a structure and comparing (S17) the simulated interaction with the detected radiation. The method is modified (S14a, S15a, S19a) to take account of changes in the structure which are caused by the inspection radiation. These changes may be for example shrinkage of the material, or changes in its optical characteristics. The changes may be caused by inspection radiation in the current observation or in a previous observation.

Abstract translation: 感兴趣的结构（T）例如在X射线或EUV波段中用辐射照射，并且散射辐射由检测器（19,274,908,1012）检测。 处理器（PU）例如通过模拟（S16）辐射与结构的相互作用并比较（S17）模拟的相互作用与检测到的辐射来计算诸如线宽（CD）或覆盖（OV）的属性。 该方法被修改（S14a，S15a，S19a）以考虑由检查辐射引起的结构变化。 这些变化可能是例如材料的收缩，或其光学特性的变化。 这些变化可能是由当前观察或先前观察中的检查辐射引起的。

公开(公告)号：WO2017148738A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/053877

申请日：2017-02-21

Applicant: ASML NETHERLANDS B.V.

Inventor： BHATTACHARYYA, Kaustuve

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

Abstract: Disclosed is a method of measuring a target, associated lithographic method and litho cell. The method comprises measuring said target subsequent to exposure of structures by a lithographic process in a current layer on a substrate over one or more preceding layers, wherein the one or more preceding layers have each undergone an etch step, the target being comprised only in at least one of said one or more preceding layers. In this way, an after-etch measurement of the target is obtained.

Abstract translation: 公开了一种测量目标，相关光刻方法和光刻单元的方法。 该方法包括在通过一个或多个先前层上的衬底上的当前层中的光刻工艺曝光结构之后测量所述目标，其中所述一个或多个先前层各自经历了蚀刻步骤，所述目标仅包含在 所述一个或多个在前层中的至少一个。 通过这种方式，可以获得目标的蚀刻后测量结果。

公开(公告)号：WO2017060080A1

公开(公告)日：2017-04-13

申请号：PCT/EP2016/072363

申请日：2016-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： YPMA, Alexander ,  DECKERS, David, Frans, Simon ,  BIJNEN, Franciscus, Godefridus, Casper ,  VAN HAREN, Richard, Johannes, Franciscus ,  KOU, Weitian

IPC: G05B19/418 ,  G03F7/20

CPC classification number: G05B19/41875 ,  G03F7/70508 ,  G03F7/70525 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7092 ,  G05B2219/45031 ,  Y02P90/22

Abstract: In a lithographic process in which a series of wafers (W(i)) are processed in different contexts. Object data (ODAT/PDAT) is received which may be for example performance data (PDAT) representing overlay measured on a set of wafers that have been processed previously. Context data (CDAT) represents a parameters of the lithographic process that vary between wafers within the set. By principal component analysis or other statistical analysis of the performance data (410), the set of wafers into two or more subsets (412). The first partitioning of the wafers and the context data are used (414) to identify one or more relevant context parameters (418), being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled (400) for new wafers by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.

Abstract translation: 在其中在不同上下文中处理一系列晶片（W（i））的光刻工艺中。 接收到对象数据（ODAT / PDAT），其可以例如表示在先前已经处理的一组晶片上测量的覆盖层的性能数据（PDAT）。 上下文数据（CDAT）表示在组内的晶片之间变化的光刻过程的参数。 通过主成分分析或性能数据（410）的其他统计分析，将该组晶片分成两个或多个子集（412）。 使用晶片和上下文数据的第一分区（414）来识别一个或多个相关的上下文参数（418），其是观察到与第一分区最强相关的光刻处理的参数。 通过参考所识别的相关上下文参数，光刻设备被控制（400）用于新的晶片。 描述了具有反馈控制和前馈控制的实施例。

公开(公告)号：WO2016124393A1

公开(公告)日：2016-08-11

申请号：PCT/EP2016/051007

申请日：2016-01-19

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Xing Lan ,  SMILDE, Hendrik, Jan, Hidde ,  PENG, Yue-Lin ,  CEKLI, Hakki, Ergun ,  PELLO, Josselin ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F7/20

CPC classification number: G01B11/272 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7007

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.

Abstract translation: 公开了一种测量光刻工艺参数的方法，以及相关联的计算机程序和设备。 该方法包括在衬底上提供多个目标结构，每个靶结构包括在衬底的不同层上的第一结构和第二结构。 用测量辐射测量每个目标结构以获得目标结构中的目标不对称性的测量，所述目标不对称性由于第一和第二结构的未对准而包括覆盖贡献，以及由于至少第一个结构中的结构不对称的结构贡献 结构体。 获得与每个目标结构的至少第一结构中的结构不对称有关的结构不对称特征，结构不对称特性与测量辐射的至少一个所选特征无关。 然后使用目标不对称性和结构不对称特征的测量来确定每个目标结构的目标不对称的覆盖贡献。

公开(公告)号：WO2016054581A1

公开(公告)日：2016-04-07

申请号：PCT/US2015/053838

申请日：2015-10-02

Applicant: KLA-TENCOR CORPORATION

Inventor： ADEL, Michael E. ,  TARSHISH-SHAPIR, Inna ,  WEI, Jeremy (Shi-Ming) ,  GHINOVKER, Mark

IPC: H01L21/66

CPC classification number: G03F7/70491 ,  G03F7/70616 ,  G06F17/50 ,  H01L22/30

Abstract: Metrology target design methods and verification targets are provided. Methods comprise using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may comprise overlay target features and be size optimized to be measureable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also comprise modifications to workflows between manufacturers and metrology vendors which provide enable higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.

Abstract translation: 提供计量目标设计方法和验证目标。 方法包括使用与设计的计量目标相关的OCD数据作为目标模型与晶片上的相应实际目标之间的差异的估计，以及调整度量目标设计模型以补偿估计的差异。 专用验证目标可以包括覆盖目标特征，并且其尺寸被优化以由OCD传感器测量，以便能够对由生产过程变化导致的不准确性进行补偿。 方法还包括对制造商和计量供应商之间的工作流程进行修改，这些工具提供了更高保真度量的目标设计模型，并最终提高了计量测量的精度。

公开(公告)号：WO2016050453A1

公开(公告)日：2016-04-07

申请号：PCT/EP2015/070410

申请日：2015-09-07

Applicant: ASML NETHERLANDS B.V.

Inventor： SINGH, Amandev ,  PELLEMANS, Henricus, Petrus, Maria

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70641 ,  G02B21/245 ,  G03F7/70616 ,  G03F9/7026

Abstract: An inspection apparatus (300) includes a focus monitoring arrangement (500, 500'). Focusing radiation (505) comprises radiation having a first wavelength and radiation having a second wavelength. Reference radiation and focusing radiation at each wavelength are provided with at least one relative frequency shift so that the interfering radiation detected in the detection system includes a time-varying component having a characteristic frequency. A focus detection system (520) comprises one or more lock-in detectors (520b, 520c, 900). Operating the lock-in detectors with reference to both the first and second characteristic frequencies allows the arrangement to select which of the first and second focusing radiation is used to determine whether the optical system is in focus. Good quality signals can be obtained from targets of different structure.

Abstract translation: 检查装置（300）包括聚焦监视装置（500,500'）。 聚焦辐射（505）包括具有第一波长的辐射和具有第二波长的辐射。 在每个波长处的参考辐射和聚焦辐射被提供有至少一个相对频移，使得在检测系统中检测到的干扰辐射包括具有特征频率的时变分量。 焦点检测系统（520）包括一个或多个锁定检测器（520b，520c，900）。 参考第一和第二特征频率操作锁定检测器允许该装置选择使用第一和第二聚焦辐射中的哪一个来确定光学系统是否聚焦。 可以从不同结构的目标获得良好的质量信号。

公开(公告)号：WO2015165623A1

公开(公告)日：2015-11-05

申请号：PCT/EP2015/054650

申请日：2015-03-05

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： MOEST, Bearrach ,  DELMASTRO, Peter, A. ,  ONVLEE, Johannes ,  VAN DER WIELEN, Adrianus, Martinus ,  WARD, Christopher, Charles

IPC: G03F7/20

CPC classification number: G03F7/70616 ,  G01B11/14 ,  G03F7/70058 ,  G03F7/70775 ,  G03F7/70783 ,  G03F7/70875

Abstract: A system and method are provided for determining deformation of a patterning device and/or shift position of the patterning device relative. The system includes a first sensing sub-system that measures respective positions of a plurality of reference marks on the patterning device, and a second sensing sub-system that measures positions of the edge of the patterning device relative to the support. The system further includes a controller to determine an absolute position of the patterned portion and change in the absolute position based on measured respective positions of marks on the patterning device, determine a change in a relative position of the edge of the patterned device based on the measured edge positions, and estimate a change in a position of the patterning device relative to the support and a change in a pattern distortion of the patterned portion of the patterning device over a time period.

Abstract translation: 提供了一种用于确定图案形成装置相对于图案形成装置的变形和/或移动位置的系统和方法。 该系统包括测量图案形成装置上的多个参考标记的相应位置的第一感测子系统和测量图案形成装置的边缘相对于支撑件的位置的第二感测子系统。 该系统还包括一个控制器，用于基于测量的图案形成装置上的标记的相应位置来确定图案化部分的绝对位置和绝对位置的变化，基于图案化装置的边缘确定相对位置的变化 测量边缘位置，并且估计图案形成装置相对于支撑件的位置的变化以及图案形成装置的图案化部分的图案变形在一段时间内的变化。

公开(公告)号：WO2015112802A1

公开(公告)日：2015-07-30

申请号：PCT/US2015/012592

申请日：2015-01-23

Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON U.S. HOLDINGS, INC.

Inventor： DEVILLIERS, Anton J. ,  FULFORD, Daniel

IPC: H01L21/027

CPC classification number: G03F7/70616 ,  G03F7/70425

Abstract: Techniques herein include systems and methods that provide a spatially-controlled projection of electromagnetic radiation, such as light, onto a substrate as a mechanism of controlling or modulating critical dimensions of various features and structures being micro-fabricated on a substrate. Combining such spatial light projection with photolithographic exposure can achieve significant improvements in critical dimension uniformity across a surface of a substrate. In general, methods herein include patterning processes that identify or receive a critical dimension signature that spatially characterizes critical dimension values that correspond to the substrate. A pattern of electromagnetic radiation is projected onto a patterning film coated on substrate using a digital pixel-based projection system. A conventional photolithographic exposure process is executed subsequent to, or prior to, the pixel-based projection. The patterning film can then be developed to yield a relief pattern having critical dimensions shaped by both exposure processes.

Abstract translation: 本文的技术包括将电磁辐射（例如光）的空间控制投影提供到衬底上的系统和方法，作为控制或调节在衬底上被微制造的各种特征和结构的关键尺寸的机构。 将这种空间光投影与光刻曝光相结合可以在衬底的表面上的临界尺寸均匀性上得到显着改善。 通常，本文的方法包括图案化处理，其识别或接收在空间上表征与衬底相对应的关键尺寸值的临界尺度标记。 使用基于数字像素的投影系统将电磁辐射的图案投影到涂覆在基板上的图案化膜上。 在基于像素的投影之后或之前执行传统的光刻曝光处理。 然后可以开发图案化膜以产生具有通过两个曝光工艺成形的关键尺寸的浮雕图案。

公开(公告)号：WO2014193983A1

公开(公告)日：2014-12-04

申请号：PCT/US2014/039833

申请日：2014-05-28

Applicant: KLA-TENCOR CORPORATION

Inventor： NURIEL, Amir

IPC: H01L21/66

CPC classification number: G01N21/01 ,  G01N21/9501 ,  G01N2201/02 ,  G01N2201/12 ,  G03F7/70616 ,  G06F17/5072 ,  G06F17/5081 ,  Y10T428/2457

Abstract: Multi-layered targets, design files and design and production methods thereof are provided. The multi-layered targets comprise process layers arranged to have parallel segmentation features at specified regions, and target layer comprising target elements which are perpendicular to the parallel segmentation features of the process layers at the specified regions.

Abstract translation: 提供了多层目标，设计文件及其设计和制作方法。 多层目标包括布置成在特定区域具有平行分割特征的处理层，目标层包括垂直于指定区域处理层的平行分割特征的目标元素。