Abstract:
An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.
Abstract:
Disclosed herein is a computer-implemented method comprising: obtaining a sub-layout comprising an area that is a performance limiting spot; adjusting colors of patterns in the area; determining whether the area is still performance limiting spot. Another method comprises: decomposing patterns in a design layout into multiple sub-layouts; determining for at least one area in one of the sub- layouts, the likelihood of that a figure of merit is beyond its allowed range; if the likelihood is above a threshold, that one sub-layout has a performance limiting spot. Yet another method disclosed comprises: obtaining a design layout comprising a first group of patterns and a second group of patterns, wherein colors of the first group of patterns are not allowed to change and colors of the second group of patterns are allowed to change; co-optimizing at least the first group of patterns, the second group of patterns and a source of a lithographic apparatus.