公开(公告)号：WO2018122696A1

公开(公告)日：2018-07-05

申请号：PCT/IB2017/058261

申请日：2017-12-21

Applicant: DWS S.R.L.

Inventor： MURARO, Alberto ,  FORTUNATO, Roberto

IPC: G03F7/20 ,  G01B21/04 ,  B29C64/386 ,  B33Y50/02

CPC classification number: G03F7/70416 ,  B29C64/393 ,  B33Y50/02 ,  G03F7/7005 ,  G03F7/70383 ,  G03F7/704 ,  G03F7/70466 ,  G03F7/70475 ,  G03F7/70516

Abstract: Method for the calibration of a plurality of light sources (3) belonging to an additive manufacturing machine adapted to manufacture layered three- dimensional objects by selective solidification of corresponding layers of a basic material (1) in the liquid, pasty or powdery state, through irradiation with a light radiation emitted by the plurality of light sources, comprising the operations of: providing a layer of basic material (1); providing light sources (3) to convey, on respective work areas (5) of a surface of the basic material (1) mutually superposed in pairs, respective light beams (4) adapted to selectively modify the basic material (1); defining, for each work area (5), a corresponding reference surface superposed to the work area (5) and a corresponding alignment configuration between them; determining the relative displacements of each work area (5) with respect to the corresponding reference surface adapted to bring the work area (5) to the corresponding alignment configuration. The determination of the relative displacements between each work area (5) and the corresponding reference surface comprises the operations of: providing first image portions (8; 81; 82) on the reference surface; activating the corresponding light source (3) to project on the work surface (2), for each first image portion (8; 81; 82), a corresponding second image portion (9; 91; 92) adjacent to the first image portion (8; 81; 82). Each first image portion (8; 81; 82) and the corresponding second image portion (9; 91; 92) represent, respectively, a first graduated scale (10; 101; 102) and a reading cursor (11), or vice versa, configured to indicate, in combination with each other, a misalignment between the two image portions (8, 9; 81, 91; 82, 92).

公开(公告)号：WO2017194285A1

公开(公告)日：2017-11-16

申请号：PCT/EP2017/059371

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： JOCHEMSEN, Marinus ,  MIDDLEBROOKS, Scott, Anderson ,  HUNSCHE, Stefan ,  WANG, Te-Sheng

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70466 ,  G03F7/70616

Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining a displacement for each of the structures with respect to a reference point for that structure; and assigning, using a hardware computer system, each of the structures into one of a plurality of groups based on the displacement.

Abstract translation: 一种方法，包括：获得衬底上的多个结构的图像，其中通过转移设计布局的对应图案在所述衬底上形成所述多个结构中的每一个; 获得每个结构相对于该结构的参考点的位移; 并且使用硬件计算机系统将每个结构分配到基于位移的多个组中的一个中。

公开(公告)号：WO2016054477A1

公开(公告)日：2016-04-07

申请号：PCT/US2015/053660

申请日：2015-10-02

Applicant: SYNOPSYS, INC.

Inventor： CECIL, Thomas, Christopher

IPC: H01L21/027

CPC classification number: G06F17/5081 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/70466 ,  G06F17/5009

Abstract: A matrix is produced for a semiconductor design. Interactions between mask edges in forming semiconductor shapes are determined and a graph created that shows those interactions. The graph is then partitioned into groups using a coloring algorithm, with each group representing one or more non-interacting mask edges. A lithography simulation is performed for each group, with the edges of that group perturbed, but the edges of other groups unmoved. The partial derivatives are calculated for the edges of a group based on the simulation with those edges perturbed, and used to populate locations in a Jacobian matrix. The Jacobian matrix is then used to solve an Optical Proximity Correction (OPC) problem by finding a mask edge correction vector for a given wafer targeting error vector.

Abstract translation: 制造用于半导体设计的矩阵。 确定形成半导体形状的掩模边缘之间的相互作用，并创建显示这些相互作用的图形。 然后使用着色算法将图形分割成组，每个组表示一个或多个非交互掩码边缘。 对每组进行光刻模拟，该组的边缘受到扰动，但其他组的边缘不动。 基于具有扰动的边缘的模拟，针对组的边缘计算偏导数，并用于填充雅可比矩阵中的位置。 然后，通过为给定的晶片靶向误差向量找到掩模边缘校正向量，然后使用雅可比矩阵来解决光学近似校正（OPC）问题。

公开(公告)号：WO2015109036A1

公开(公告)日：2015-07-23

申请号：PCT/US2015/011488

申请日：2015-01-14

Applicant: KLA-TENCOR CORPORATION

Inventor： AMIR, Nuriel

IPC: G01B11/00 ,  G03F7/20

CPC classification number: G01N21/4785 ,  B05D1/32 ,  G01N21/01 ,  G03F7/70466 ,  G03F7/70633 ,  G03F7/70683

Abstract: Multiply patterned metrology targets and target design methods are provided to enable pitch walk measurements using overlay measurements. Multiply patterned structures having single features or spacers produced simultaneously and sharing a common pitch with the paired features or spacers are used to express pitch walk as a measurable overlay between the structures. For example, targets are provided which comprise a first multiply patterned structure having a single left-hand feature or spacer produced simultaneously and sharing a common pitch with the respective paired features or spacers, and a second multiply patterned structure having a single right-hand feature or spacer produced simultaneously and sharing a common pitch with the respective paired features or spacers.

Abstract translation: 提供了多重图案化的测量目标和目标设计方法，以使用覆盖测量来进行俯仰测量。 使用具有同时产生的单个特征或间隔物的共同图案化结构，并与成对的特征或间隔物共享公共间距，以将间距行走表示为在结构之间的可测量的覆盖。 例如，提供了包括具有同时产生的单个左手特征或间隔物的第一多重图案化结构的目标，并且与相应的成对特征或间隔物共享公共间距，以及具有单个右手特征的第二多重图案化结构 或间隔件同时制造并且与相应的成对特征或间隔物共享共同的间距。

公开(公告)号：WO2015090838A1

公开(公告)日：2015-06-25

申请号：PCT/EP2014/075165

申请日：2014-11-20

Applicant: ASML NETHERLANDS B.V.

Inventor： NOOITGEDAGT, Tjitte ,  KEA, Marc, Jurian

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70466 ,  G03F7/70633 ,  G03F7/70683

Abstract: Disclosed is a method of measuring overlay between upper and lower layers on a substrate using metrology targets formed by a lithographic process. The lithographic process is of a multiple-patterning type whereby first and second distinct populations of structures are formed in a single one of said layers (L1) by respective first and second patterning steps. The metrology target (620) in the single one of said layers comprises a set of structures of which different subsets (642A, 642B) are formed in said first and second patterning steps. An overlay measurement on this target can be used to calculate a combined (average) overlay performance parameter for both of the first and second patterning steps.

Abstract translation: 公开了一种使用由光刻工艺形成的测量目标来测量衬底上的上层和下层之间的覆盖层的方法。 光刻工艺是多重图案化形式，其中通过相应的第一和第二图案形成步骤，通过第一和第二不同的结构群体形成在单个所述层（L1）中。 所述层中的一个中的测量目标（620）包括在所述第一和第二图案化步骤中形成不同子集（642A，642B）的一组结构。 可以使用该目标上的覆盖测量来计算第一和第二图案化步骤两者的组合（平均）叠加性能参数。

公开(公告)号：WO2014034578A1

公开(公告)日：2014-03-06

申请号：PCT/JP2013/072634

申请日：2013-08-19

Applicant: FUJIFILM CORPORATION

Inventor： YAMANAKA, Tsukasa ,  IGUCHI, Naoya ,  UEBA, Ryosuke ,  YAMAMOTO, Kei

IPC: G03F7/40 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32

CPC classification number: G03F7/2022 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/70466

Abstract: A pattern forming method includes: (a) forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition (I) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (b) exposing the first film; (c) developing the exposed first film using a developer containing an organic solvent to form a first negative pattern; (e) forming a second film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition (II) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (f) exposing the second film; and (g) developing the exposed second film using a developer containing an organic solvent to form a second negative pattern in this order.

Abstract translation: 图案形成方法包括：（a）使用光化射线敏感或辐射敏感性树脂组合物（I）在基材上形成第一膜，所述树脂组合物（I）含有在含有有机溶剂的显影剂中的溶解度由于极性增加而降低 酸的作用 （b）曝光第一片; （c）使用包含有机溶剂的显影剂显影所述暴露的第一膜以形成第一负图案; （e）使用包含其中含有有机溶剂的显影剂中的溶解度由于酸的作用引起极性增加的树脂的光化射线敏感性或辐射敏感性树脂组合物（II）在基材上形成第二膜; （f）使第二膜曝光; 和（g）使用包含有机溶剂的显影剂显影所暴露的第二膜，以依次形成第二负图案。

公开(公告)号：WO2012080008A2

公开(公告)日：2012-06-21

申请号：PCT/EP2011/071654

申请日：2011-12-02

Applicant: CARL ZEISS SMS GMBH ,  CARL ZEISS SMS LTD. ,  BEYER, Dirk ,  DMITRIEV, Vladimir ,  SHARONI, Ofir ,  WERTSMAN, Nadav

Inventor： BEYER, Dirk ,  DMITRIEV, Vladimir ,  SHARONI, Ofir ,  WERTSMAN, Nadav

IPC: G03F7/20

CPC classification number: G03F1/72 ,  G03F1/84 ,  G03F7/7035 ,  G03F7/70466 ,  G03F7/70625 ,  G03F7/70633

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises:(a) measuring the at least one error on a wafer at a wafer processing site,and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract translation: 本发明涉及一种用于校正由至少一个光刻掩模处理的晶片上的至少一个误差的方法，该方法包括：（a）在晶片加工处测量晶片上的至少一个误差 （b）通过在所述至少一个光刻掩模中引入局部持久修饰的至少一种布置来修改所述至少一个光刻掩模。

公开(公告)号：WO2012076629A2

公开(公告)日：2012-06-14

申请号：PCT/EP2011072140

申请日：2011-12-07

Applicant: MICRONIC MYDATA AB ,  SANDSTROEM TORBJOERN

Inventor： SANDSTROEM TORBJOERN

IPC: G03F7/20

CPC classification number: G03F7/70583 ,  G03F7/70291 ,  G03F7/70358 ,  G03F7/70383 ,  G03F7/704 ,  G03F7/70425 ,  G03F7/70466

Abstract: In general, one aspect of the technology described can be embodied in methods that include the action of applying a writing mechanism having non-isotropic writing properties resulting from different degrees of coherence interaction in a sweep direction and a cross-sweep direction, writing an image pattern twice on a work piece using the writing mechanism rotated relative to the image pattern written on the workpiece between first and second writings, whereby writing with the rotated writing mechanism averages the non-isotropic properties. The lesser included angle separating first and second relative directions of movement between a workpiece and writing mechanism may be 20 degrees or greater, or somewhat less, under conditions described herein.

Abstract translation: 通常，所描述的技术的一个方面可以体现在包括在扫描方向和横扫方向上由不同程度的相干相互作用产生的具有非各向同性写入属性的写入机构的作用的方法中， 使用相对于在第一和第二写入之间写入到工件上的图像图案旋转的书写机构在工件上进行图案两次，由此用旋转的书写机构进行写入来平均非各向同性的特性。 在本文所述的条件下，分离工件和书写机构之间的第一和第二相对运动方向的较小夹角可以为20度或更大，或稍微较小。

公开(公告)号：WO2012041339A1

公开(公告)日：2012-04-05

申请号：PCT/EP2010/005901

申请日：2010-09-28

Applicant: CARL ZEISS SMT GMBH ,  RUOFF, Johannes ,  NEUMANN, Jens Timo ,  ZIMMERMANN, Jörg ,  HELLWEG, Dirk ,  JÜRGENS, Dirk

Inventor： RUOFF, Johannes ,  NEUMANN, Jens Timo ,  ZIMMERMANN, Jörg ,  HELLWEG, Dirk ,  JÜRGENS, Dirk

IPC: G03F7/20

CPC classification number: G03F7/70141 ,  G03F7/70116 ,  G03F7/70466 ,  G03F7/70566 ,  G03F7/70633

Abstract: A method of reducing image placement errors in a microlithographic projection exposure apparatus comprises the steps of providing a mask (16), a light sensitive layer (22) and a microlithographic projection exposure apparatus (10) which images features (19) contained in the mask (16) onto the light sensitive surface (22) using projection light. In a next step image placement errors associated with an image of the features (10) formed on the light sensitive surface (22) are determined either by simulation or metrologically. Then an input state of polarization of the projection light is changed to an elliptical output state of polarization which is selected such that the image placement errors are reduced.

Abstract translation: 一种在微光刻投影曝光装置中减少图像放置误差的方法包括以下步骤：提供掩模（16），光敏层（22）和微影印制投影曝光装置（10），其对包含在掩模中的特征（19）进行成像 （16）使用投影光到达光敏表面（22）。 在下一步骤中，通过模拟或计量确定与形成在光敏表面（22）上的特征（10）的图像相关联的图像放置误差。 然后，投影光的输入偏振状态变为偏振的椭圆输出状态，其被选择为使得图像放置误差减小。

公开(公告)号：WO2010096593A3

公开(公告)日：2010-12-16

申请号：PCT/US2010024633

申请日：2010-02-18

Applicant: UNIV NORTHWESTERN ,  MIRKIN CHAD A ,  ZHENG GENGFENG ,  HUO FENGWEI

Inventor： MIRKIN CHAD A ,  ZHENG GENGFENG ,  HUO FENGWEI

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/2051 ,  G03F7/70291 ,  G03F7/70383 ,  G03F7/70466 ,  G03F7/70525 ,  G03F7/70958

Abstract: The disclosure relates to methods of beam pen lithography using a tip array having a plurality of transparent, elastomeric, reversibly-deformable tips coated with a blocking layer and apertures defined in the blocking layer to expose tip ends of the tips in the array. The tip array can be used to perform a photolithography process in which the tips are illuminated with a radiation that is channeled through the tips and out the apertures to expose a photosensitive substrate. Also disclosed are tip arrays formed of polymers and gels, apparatus including the tip arrays and radiation sources, and related apparatus for selectively masking tips in the tip array from radiation emitted from the radiation source.

Abstract translation: 本公开涉及使用尖端阵列的光束笔光刻方法，所述尖端阵列具有涂覆有阻挡层的多个透明的，弹性的，可逆变形的尖端和在所述阻挡层中限定的孔以暴露所述阵列中的尖端的末端。 尖端阵列可以用于执行光刻工艺，其中尖端用引导穿过尖端并从孔出来的辐射照射以曝光感光基底。 还公开了由聚合物和凝胶形成的尖端阵列，包括尖端阵列和辐射源的设备以及用于从由辐射源发射的辐射选择性地遮蔽尖端阵列中的尖端的相关装置。