公开(公告)号：WO2022263312A1

公开(公告)日：2022-12-22

申请号：PCT/EP2022/065811

申请日：2022-06-10

Applicant: ASML NETHERLANDS B.V.

Inventor： TAO, Jun ,  CAO, Yu ,  SPENCE, Christopher, Alan

IPC: G03F1/36 ,  G06N20/00 ,  G06N3/02

Abstract: Described herein is a method of determining assist features for a mask pattern. The method includes obtaining (i) a target pattern comprising a plurality of target features, wherein each of the plurality of target features comprises a plurality of target edges, and (ii) a trained sequence-to- sequence machine leaning (ML) model (e.g., long short term memory, Gated Recurrent Units, etc.) configured to determine sub-resolution assist features (SRAFs) for the target pattern. For a target edge of the plurality of target edges, geometric information (e.g., length, width, distances between features, etc.) of a subset of target features surrounding the target edge is determined. Using the geometric information as input, the ML model generates SRAFs to be placed around the target edge.

公开(公告)号：WO2020169303A1

公开(公告)日：2020-08-27

申请号：PCT/EP2020/051778

申请日：2020-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： TAO, Jun ,  BARON, Stanislas, Hugo, Louis ,  SU, Jing ,  LUO, Ya ,  CAO, Yu

IPC: G03F1/36 ,  G03F7/20 ,  G06N3/08 ,  G06N20/00

Abstract: Described herein are training methods and a mask correction method. One of the methods is for training a machine learning model configured to predict a post optimal proximity correction (OPC) image for a mask. The method involves obtaining (i) a pre-OPC image associated with a design layout to be printed on a substrate, (ii) an image of one or more assist features for the mask associated with the design layout, and (iii) a reference post- OPC image of the design layout; and training the machine learning model using the pre-OPC image and the image of the one or more assist features as input such that a difference between the reference image and a predicted post-OPC image of the machine learning model is reduced.

公开(公告)号：WO2022128500A1

公开(公告)日：2022-06-23

申请号：PCT/EP2021/083917

申请日：2021-12-02

Applicant: ASML NETHERLANDS B.V.

Inventor： TAO, Jun ,  CAO, Yu ,  SPENCE, Christopher, Alan

IPC: G03F1/36 ,  G03F7/20

Abstract: Described herein are a method for determining a mask pattern and a method for training a machine learning model. The method for generating data for a mask pattern associated with a patterning process includes obtaining (i) a first mask image (e.g., CTM) associated with a design pattern, (ii) a contour (e.g., a resist contour) based on the first mask image, (iii) a reference contour (e.g., an ideal resist contour) based on the design pattern; and (iv) a contour difference between the contour and the reference contour. The contour difference and the first mask image are inputted to a model to generate mask image modification data. Based on the first mask image and the mask image modification data, a second mask image is generated for determining a mask pattern to be employed in the patterning process.

公开(公告)号：WO2021175570A1

公开(公告)日：2021-09-10

申请号：PCT/EP2021/053569

申请日：2021-02-12

Applicant: ASML NETHERLANDS B.V.

Inventor： TAO, Jun ,  CAO, Yu ,  SPENCE, Christopher, Alan

IPC: G03F1/36

Abstract: A method for training a machine learning model to generate a characteristic pattern includes obtaining training data associated with a reference feature in a reference image. The training data includes (i) location data of each portion of the reference feature, and (ii) a presence value indicating whether the portion of the reference feature is located within a reference assist feature generated for the reference feature. The method includes training the machine learning model to predict a presence value based on the actual presence value in the training data. The predicted presence value indicates whether a portion of a feature (e.g., a skeleton point on a skeleton of a contour of the feature) is to be covered by an assist feature set. The training is performed based on the training data such that a metric between a predicted presence value and the presence value is minimized.

公开(公告)号：WO2021160522A1

公开(公告)日：2021-08-19

申请号：PCT/EP2021/052724

申请日：2021-02-04

Applicant: ASML NETHERLANDS B.V.

Inventor： CAO, Yu ,  TAO, Jun ,  ZHANG, Quan ,  SHU, Yongsheng ,  FONG, Wei-chun

IPC: G03F1/36 ,  G03F7/20

Abstract: Described herein are a method for determining a mask pattern and a method for training a machine learning model. The method for determining a mask pattern includes obtaining, via executing a model using a target pattern to be printed on a substrate as an input pattern, a post optical proximity correction (post-OPC) pattern; determining, based on the post-OPC pattern, a simulated pattern that will be printed on the substrate; and determining the mask pattern based on a difference between the simulated pattern and the target pattern. The determining of the mask pattern includes modifying, based on the difference, the input pattern inputted to the model such that the difference is reduced; and executing, using the modified input pattern, the model to generate a modified post-OPC pattern from which the mask pattern can be derived.