公开(公告)号：WO2020078721A1

公开(公告)日：2020-04-23

申请号：PCT/EP2019/076667

申请日：2019-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN ZWOL, Pieter-Jan ,  BALTUSSEN, Sander ,  DE GRAAF, Dennis ,  FRANKEN, Johannes, Christiaan, Leonardus ,  GIESBERS, Adrianus, Johannes, Maria ,  KLEIN, Alexander, Ludwig ,  KLOOTWIJK, Johan, Hendrik ,  KNAPEN, Peter, Simon, Antonius ,  KURGANOVA, Evgenia ,  KUZNETSOV, Alexey, Sergeevich ,  NOTENBOOM, Arnoud, Willem ,  VALEFI, Mahdiar ,  VAN DE KERKHOF, Marcus, Adrianus ,  VAN DEN EINDEN, Wilhelmus, Theodorus, Anthonius, Johannes ,  VAN DER WOORD, Ties, Wouter ,  WONDERGEM, Hendrikus, Jan ,  ZDRAVKOV, Aleksandar, Nikolov

IPC: G03F1/00 ,  G03F1/62 ,  G03F1/64 ,  G03F7/20

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising: at least one membrane layer supported by a planar substrate, wherein the planar substrate comprises an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate, wherein the step of selectively removing the inner region of the planar substrate comprises using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer; such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border comprising the border region of the planar substrate and the first sacrificial layer situated between the border and the membrane layer.

公开(公告)号：WO2019091932A1

公开(公告)日：2019-05-16

申请号：PCT/EP2018/080219

申请日：2018-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： HOUWELING, Zomer, Silvester ,  ANDE, Chaitanya Krishna ,  DE GRAAF, Dennis ,  KATER, Thijs ,  KUIJKEN, Michael, Alfred, Josephus ,  VALEFI, Mahdiar

IPC: G03F1/62 ,  G03F1/64 ,  G03F7/20

Abstract: A pellicle comprising a metal oxysilicide layer. Also disclosed in a pellicle comprising a molybdenum layer, a ruthenium layer and a silicon oxynitride layer, wherein the molybdenum layer is disposed between the ruthenium layer and the silicon oxynitride layer. Also disclosed is a method of manufacturing a pellicle for a lithographic apparatus, said method comprising: providing a metal oxysilicide layer, a lithographic assembly (LA) comprising a pellicle (15) comprising a metal oxysilicide layer, and the use of a pellicle comprising a metal oxysilicide layer in a lithographic apparatus.

公开(公告)号：WO2017071900A1

公开(公告)日：2017-05-04

申请号：PCT/EP2016/073033

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： VALEFI, Mahdiar ,  LAFARRE, Raymond, Wilhelmus, Louis

IPC: G03F7/20 ,  H01L21/687

CPC classification number: H01L21/6838 ,  G03F7/707 ,  H01L21/6831 ,  H01L21/6875

Abstract: A lithographic apparatus substrate table comprises a plurality of first projections, whereby the first projections define a first substrate supporting plane and a plurality of second projections, whereby the second projections define a second substrate supporting plane. The substrate table further comprises a clamping device configured to exert a clamping force onto the substrate. The second substrate supporting plane is parallel to the first substrate supporting plane. The second substrate supporting plane is offset in respect of the first substrate supporting plane in a direction perpendicular to the first and second substrate supporting planes. The lithographic apparatus substrate table is configured to support the substrate on the second projections at the second substrate supporting plane before application of the clamping force by the clamping device. The second projections are configured to deform upon application by the clamping device of the clamping force onto the substrate, thereby providing the substrate to move from the second substrate supporting plane to the first substrate supporting plane when clamped by the clamping device.

Abstract translation: 光刻设备衬底台包括多个第一突起，由此第一突起限定第一衬底支撑平面和多个第二突起，由此第二突起限定第二衬底支撑平面。 衬底台还包括夹持装置，该夹持装置构造成将夹持力施加到衬底上。 第二基板支撑平面平行于第一基板支撑平面。 第二基板支撑平面在垂直于第一和第二基板支撑平面的方向上相对于第一基板支撑平面偏移。 光刻设备衬底台被构造成在由夹持设备施加夹持力之前将衬底支撑在第二衬底支撑平面处的第二突起上。 第二突起构造成在夹紧装置施加时将夹紧力施加到基底上时变形，由此提供基底以在被夹紧装置夹紧时从第二基底支撑平面移动到第一基底支撑平面。