公开(公告)号：WO2020078721A1

公开(公告)日：2020-04-23

申请号：PCT/EP2019/076667

申请日：2019-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN ZWOL, Pieter-Jan ,  BALTUSSEN, Sander ,  DE GRAAF, Dennis ,  FRANKEN, Johannes, Christiaan, Leonardus ,  GIESBERS, Adrianus, Johannes, Maria ,  KLEIN, Alexander, Ludwig ,  KLOOTWIJK, Johan, Hendrik ,  KNAPEN, Peter, Simon, Antonius ,  KURGANOVA, Evgenia ,  KUZNETSOV, Alexey, Sergeevich ,  NOTENBOOM, Arnoud, Willem ,  VALEFI, Mahdiar ,  VAN DE KERKHOF, Marcus, Adrianus ,  VAN DEN EINDEN, Wilhelmus, Theodorus, Anthonius, Johannes ,  VAN DER WOORD, Ties, Wouter ,  WONDERGEM, Hendrikus, Jan ,  ZDRAVKOV, Aleksandar, Nikolov

IPC: G03F1/00 ,  G03F1/62 ,  G03F1/64 ,  G03F7/20

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising: at least one membrane layer supported by a planar substrate, wherein the planar substrate comprises an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate, wherein the step of selectively removing the inner region of the planar substrate comprises using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer; such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border comprising the border region of the planar substrate and the first sacrificial layer situated between the border and the membrane layer.

公开(公告)号：WO2016058822A1

公开(公告)日：2016-04-21

申请号：PCT/EP2015/072376

申请日：2015-09-29

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN ZWOL, Pieter-Jan ,  KUZNETSOV, Alexey, Sergeevich ,  OSORIO OLIVEROS, Edgar ,  STEVENS, Lucas

IPC: G21K1/06 ,  G03F7/20

CPC classification number: G21K1/062 ,  G03F7/70316 ,  G03F7/70916 ,  G03F7/70933 ,  G03F7/70958

Abstract: A multilayer optics is configured for reflection of radiation having a wavelength λ, the multilayer optics comprising a multilayer stack (300) of alternating layer pairs, wherein each pair thereof comprises a first/second layer of thickness d1/d2, wherein a periodic length p=d1+d2 of each pair of alternating layers satisfies: m λ = 2 p sinΘ, wherein m = 1, 2, 3, etc. is an integer representing the order of the Bragg diffraction peak and Θ is the angle between an incident radiation and a scattering plane of the multilayer optics; a protective region (310) comprising pairs of alternating protective layers, each pair thereof comprising a first/second protective layer of thickness ds1/ds2, wherein a periodic length ps=ds1+ds2 of each pair of alternating protective layers satisfies: m λ = 2 ps sinΘ and ps = p N, wherein N is an integer equal or larger than 2. The multilayer mirror may optionally be provided with a capping layer (320). There is further disclosed an apparatus for extreme ultraviolet lithography comprising: a vacuum container comprising an optical element having an optically active surface, a gas supply system comprising a source of an anti-blistering gaseous mixture, an exhauster configured to exhaust gas in said vacuum container; wherein the gas supply system is arranged to provide the anti-blistering gaseous mixture at the optically active surface of the optical element, and wherein the anti-blistering gaseous mixture comprises an oxygen containing gas compound at a partial pressure ranging from 5e-8 to 1e-4 mbar.

Abstract translation: 多层光学器件被配置用于反射具有波长λ的辐射，所述多层光学器件包括交替层对的多层堆叠（300），其中每对包括厚度为d1 / d2的第一/第二层，其中周期长度p 每对交替层的= d1 + d2满足：mλ= 2 psinθ，其中m = 1,2,3等是表示布拉格衍射峰的顺序的整数，Θ是入射辐射 和多层光学器件的散射面; 包括交替保护层对的保护区域（310），每对保护层包括厚度为ds1 / ds2的第一/第二保护层，其中每对交替保护层的周期长度ps = ds1 + ds2满足：mλ= 2pssinΘ和ps = p N，其中N是等于或大于2的整数。多层反射镜可以可选地设置有覆盖层（320）。 还公开了一种用于极紫外光刻的装置，包括：真空容器，其包括具有光学活性表面的光学元件，气体供应系统，其包括防起泡气体混合物源，排气器，其构造成在所述真空容器 ; 其中所述气体供应系统被布置成在所述光学元件的光学活性表面处提供所述防起泡气体混合物，并且其中所述防起泡气体混合物包含分压为5e-8至1e的含氧气体化合物 -4毫巴

公开(公告)号：WO2019170503A1

公开(公告)日：2019-09-12

申请号：PCT/EP2019/054924

申请日：2019-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： MA, Yue ,  KEMPEN, Antonius, Theodorus, Wilhelmus ,  HUMMLER, Klaus, Martin ,  MOORS, Johannes, Hubertus, Josephina ,  ROMMERS, Jeroen, Hubert ,  VAN DE WIEL, Hubertus, Johannes ,  LAFORGE, Andrew, David ,  BRIZUELA, Fernando ,  WIEGGERS, Rob, Carlo ,  GOMES, Umesh, Prasad ,  NEDANOVSKA, Elena ,  KORKMAZ, Celal ,  KIM, Alexander, Downn ,  DUARTE RODRIGUES NUNES, Rui, Miguel ,  VAN DIJCK, Hendrikus, Alphonsus, Ludovicus ,  VAN DRENT, William, Peter ,  JONKERS, Peter, Gerardus ,  ZHU, Qiushi ,  YAGHOOBI, Parham ,  WESTERLAKEN, Jan, Steven, Christiaan ,  LEENDERS, Martinus, Hendrikus, Antonius ,  ERSHOV, Alexander, Igorevich ,  FOMENKOV, Igor, Vladimirovich ,  LIU, Fei ,  JACOBS, Johannes, Henricus, Wilhelmus ,  KUZNETSOV, Alexey, Sergeevich

IPC: G03F7/20 ,  G02B5/08 ,  G21K1/06 ,  H05G2/00 ,  G02B1/14

Abstract: Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber (26) containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

公开(公告)号：WO2019091708A1

公开(公告)日：2019-05-16

申请号：PCT/EP2018/078170

申请日：2018-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： KUZNETSOV, Alexey, Sergeevich ,  BYSTROV, Kirill ,  BANINE, Vadim, Yevgenyevich ,  VAN DE KERKHOF, Marcus, Adrianus ,  SCHUH, Nadja ,  NIKIPELOV, Andrey

IPC: G03F7/20 ,  B08B7/04 ,  B24C1/00 ,  B24C3/16 ,  B24C5/04 ,  H01L21/67 ,  G02B27/00

Abstract: A method of cleaning a surface to remove a contaminant therefrom, the method comprising the steps of oxidizing at least a portion of the contaminant and passing a stream of carbon dioxide snow over the contaminant. An apparatus for cleaning a surface, the apparatus comprising at least one carbon dioxide snow outlet, and at least one plasma outlet, and a cleaning head comprising at least one carbon dioxide snow outlet and at least one plasma outlet are also disclosed.

公开(公告)号：WO2016001351A1

公开(公告)日：2016-01-07

申请号：PCT/EP2015/065080

申请日：2015-07-02

Applicant: ASML NETHERLANDS B.V.

Inventor： NIKIPELOV, Andrey, Alexandrovich ,  BANINE, Vadim, Yevgenyevich ,  BENSCHOP, Jozef, Petrus, Henricus ,  BOOGAARD, Arjen ,  DHALLUIN, Florian, Didier, Albin ,  KUZNETSOV, Alexey, Sergeevich ,  PÉTER, Mária ,  SCACCABAROZZI, Luigi ,  VAN DER ZANDE, Willem, Joan ,  VAN ZWOL, Pieter-Jan ,  YAKUNIN, Andrei, Mikhailovich

IPC: G03F7/20 ,  G03F1/00 ,  G03F1/62 ,  G02B5/08 ,  G02B5/20

CPC classification number: G03F1/62 ,  G02B5/1838 ,  G02B5/208 ,  G03F1/24 ,  G03F1/38 ,  G03F7/70191 ,  G03F7/70316 ,  G03F7/70575 ,  G03F7/70891 ,  G03F7/70916 ,  G03F7/70958 ,  G03F7/70983

Abstract: Disclosed is a membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane comprises one or more high doped regions wherein said membrane is doped with a dopant concentration greater than 10 17 cm -3 , and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein said high doped regions are comprised within some or all of said additional layers.

Abstract translation: 公开了对EUV辐射透射的膜，其可以用作光刻设备中的防护薄膜组件或光谱过滤器。 膜包括一个或多个高掺杂区域，其中所述膜掺杂有大于1017cm-3的掺杂剂浓度，以及具有低（或不）掺杂的一个或多个区域。 膜可以具有具有低掺杂和一个或多个附加层的主衬底，其中所述高掺杂区域包含在所述附加层的一些或全部内。