CHARGED PARTICLE ASSESSMENT TOOL, INSPECTION METHOD

    公开(公告)号:WO2021165134A1

    公开(公告)日:2021-08-26

    申请号:PCT/EP2021/053324

    申请日:2021-02-11

    Abstract: Charged particle assessment tools and inspection methods are disclosed. In one arrangement, a condenser lens array divides a beam of charged particles into a plurality of sub-beams. Each subbeam is focused to a respective intermediate focus. Objective lenses downstream from the intermediate foci project sub-beams from the condenser lens array onto a sample. A path of each subbeam is substantially a straight line from each condenser lens to a corresponding objective lens.

    CHARGED PARTICLE MANIPULATOR DEVICE
    4.
    发明申请

    公开(公告)号:WO2021156121A1

    公开(公告)日:2021-08-12

    申请号:PCT/EP2021/051848

    申请日:2021-01-27

    Abstract: A multi-beam manipulator device operates on sub-beams of a multi-beam to deflect the subbeam paths. The device comprises: an electrode as pairs of parallel surfaces. Each pair of parallel surfaces comprises a first surface that is arranged along a side of a corresponding line of sub-beams and a second surface that is arranged parallel to the first surface and along an opposite side of the corresponding line of sub-beam paths. A first pair of parallel surfaces is configured to electrostatically interact with an entire line of sub-beams in the multi-beam so that it is capable of applying a deflection amount to the paths of sub-beams in a first direction. A second pair of parallel surfaces is configured to electro-statically interact with an entire line of sub-beams in the multi-beam so that it is capable of applying another deflection amount to the paths of sub-beams in a second direction.

    CHARGED PARTICLE ASSESSMENT SYSTEM AND METHOD

    公开(公告)号:WO2022228943A1

    公开(公告)日:2022-11-03

    申请号:PCT/EP2022/060298

    申请日:2022-04-19

    Abstract: The present invention provides a charged particle assessment system comprising: a sample holder configured to hold a sample having a surface; a charged particle-optical device configured to project a charged particle beam towards the sample, the charged particle beam having a field of view corresponding to a portion of the surface of the sample, the charged particle-optical device having a facing surface facing the sample holder; and a projection assembly arranged to direct a light beam along a light path such that the light beam reflects off the facing surface up-beam, with respect to the light path, of being incident on the portion of the surface of the sample.

    APPARATUS AND METHOD FOR DIRECTING CHARGED PARTICLE BEAM TOWARDS A SAMPLE

    公开(公告)号:WO2022122322A1

    公开(公告)日:2022-06-16

    申请号:PCT/EP2021/081936

    申请日:2021-11-17

    Abstract: A charged particle beam apparatus for directing a charged particle beam to preselected locations of a sample surface is provided. The charged particle beam has a field of view of the sample surface. A charged-particle-optical arrangement is configured to direct a charged particle beam along a beam path towards the sample surface and to detect charged particles generated in the sample in response to the charged particle beam. A stage is configured to support and move the sample relative to the beam path. A controller is configured to control the charged particle beam apparatus so that the charged particle beam scans over a preselected location of the sample simultaneously with the stage moving the sample relative to the charged-particle-optical column along a route, the scan over the preselected location of the sample covering a part of an area of the field of view.

    PATTERNING DEVICE DEFECT DETECTION SYSTEMS AND METHODS

    公开(公告)号:WO2023036561A1

    公开(公告)日:2023-03-16

    申请号:PCT/EP2022/072752

    申请日:2022-08-15

    Abstract: Since a mask check wafer can utilize a different process than a production wafer, a high-contrast illumination setting with lower pupil fill ratio (PFR) that leads to a reduction of the productivity of the scanner can be utilized. By selecting a high-contrast illumination setting, which is different than that used on a production wafer, an improved ratio of particle printability to stochastic defects can be achieved. In combination, or instead higher dose resist can be utilized. This allows longer exposure of the wafer, such that the impact of photon shot noise is reduced, also resulting in an improved ratio of particle printability to stochastic defects. As a result, the particle printability can be enhanced further without leading to an excessive amount of stochastic defects. Because of this, the number of sites, and therefore the throughput, of a charged particle inspection and analysis can be significantly improved.

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