SILICON PRODUCTION PROCESS
    1.
    发明申请
    SILICON PRODUCTION PROCESS 审中-公开
    硅生产工艺

    公开(公告)号:WO2009129458A3

    公开(公告)日:2010-01-28

    申请号:PCT/US2009040949

    申请日:2009-04-17

    CPC classification number: C01B33/03 C01B33/103 C01B33/10705 C01B33/24

    Abstract: An improved process for producing high purity silicon results from the reaction of sodium with pure silicon tetrafluoride gas, which produces sodium fluoride as a by-product. The silicon tetrafluoride gas is formed by decomposing sodium fluorosilicate. The sodium fluorosilicate is produced by precipitation when fluorosilicic acid (FSA) is reacted with the by-product sodium fluoride in closed loop process. Likewise, the fluorosilicic acid is preferably formed at high purity using a source material that consists essentially of silica by reacting the by-product sodium fluoride with an acid to create reactive fluoride ions.

    Abstract translation: 产生高纯度硅的改进方法是由钠与纯四氟化硅气体的反应产生的,其产生作为副产物的氟化钠。 通过分解氟硅酸钠形成四氟化硅气体。 当氟硅酸(FSA)在闭环过程中与副产物氟化钠反应时,氟硅酸钠通过沉淀产生。 同样地,氟硅酸优选以高纯度形成,使用基本上由二氧化硅组成的源材料,使副产物氟化钠与酸反应以产生活性氟离子。

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