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    SILICON PRODUCTION PROCESS
    3.
    发明申请
    SILICON PRODUCTION PROCESS 审中-公开
    硅生产工艺

    公开(公告)号：WO2009129458A2

    公开(公告)日：2009-10-22

    申请号：PCT/US2009/040949

    申请日：2009-04-17

    Applicant: CIRCULON HUNGARY LTD. ,  NANIS, Leonard ,  YUAN, Shi ,  FORKIN, Matthew

    Inventor： NANIS, Leonard ,  YUAN, Shi ,  FORKIN, Matthew

    IPC: C01B33/24 ,  C01B33/10

    CPC classification number: C01B33/03 ,  C01B33/103 ,  C01B33/10705 ,  C01B33/24

    Abstract: An improved process for producing high purity silicon results from the reaction of sodium with pure silicon tetrafluoride gas, which produces sodium fluoride as a by-product. The silicon tetrafluoride gas is formed by decomposing sodium fluorosilicate. The sodium fluorosilicate is produced by precipitation when fluorosilicic acid (FSA) is reacted with the by-product sodium fluoride in closed loop process. Likewise, the fluorosilicic acid is preferably formed at high purity using a source material that consists essentially of silica by reacting the by-product sodium fluoride with an acid to create reactive fluoride ions.

    Abstract translation: 产生高纯度硅的改进方法是由钠与纯四氟化硅气体的反应产生的，其产生作为副产物的氟化钠。 通过分解氟硅酸钠形成四氟化硅气体。 当氟硅酸（FSA）在闭环过程中与副产物氟化钠反应时，氟硅酸钠通过沉淀产生。 同样地，氟硅酸优选以高纯度形成，使用基本上由二氧化硅组成的源材料，使副产物氟化钠与酸反应以产生活性氟离子。

    SILICON PRODUCTION PROCESS
    4.
    发明申请
    SILICON PRODUCTION PROCESS 审中-公开
    硅生产工艺

    公开(公告)号：WO2009129458A3

    公开(公告)日：2010-01-28

    申请号：PCT/US2009040949

    申请日：2009-04-17

    Applicant: CIRCULON HUNGARY LTD ,  NANIS LEONARD ,  YUAN SHI ,  FORKIN MATTHEW

    Inventor： NANIS LEONARD ,  YUAN SHI ,  FORKIN MATTHEW

    IPC: C01B33/24 ,  C01B33/10

    CPC classification number: C01B33/03 ,  C01B33/103 ,  C01B33/10705 ,  C01B33/24

    Abstract: An improved process for producing high purity silicon results from the reaction of sodium with pure silicon tetrafluoride gas, which produces sodium fluoride as a by-product. The silicon tetrafluoride gas is formed by decomposing sodium fluorosilicate. The sodium fluorosilicate is produced by precipitation when fluorosilicic acid (FSA) is reacted with the by-product sodium fluoride in closed loop process. Likewise, the fluorosilicic acid is preferably formed at high purity using a source material that consists essentially of silica by reacting the by-product sodium fluoride with an acid to create reactive fluoride ions.

    Abstract translation: 产生高纯度硅的改进方法是由钠与纯四氟化硅气体的反应产生的，其产生作为副产物的氟化钠。 通过分解氟硅酸钠形成四氟化硅气体。 当氟硅酸（FSA）在闭环过程中与副产物氟化钠反应时，氟硅酸钠通过沉淀产生。 同样地，氟硅酸优选以高纯度形成，使用基本上由二氧化硅组成的源材料，使副产物氟化钠与酸反应以产生活性氟离子。

    PROCESS FOR THE PREPARATION OF PURE SILICA
    5.
    发明申请
    PROCESS FOR THE PREPARATION OF PURE SILICA 审中-公开
    制备纯二氧化硅的方法

    公开(公告)号：WO2003072501A1

    公开(公告)日：2003-09-04

    申请号：PCT/IL2003/000145

    申请日：2003-02-26

    Applicant: ATI-ALUMINUM TECHNOLOGIES ISRAEL LTD. ,  SHAPIRA, Lev ,  HAREL, Simcha

    Inventor： SHAPIRA, Lev ,  HAREL, Simcha

    IPC: C01B33/10

    CPC classification number: C01B33/103 ,  C01B33/186 ,  C01P2006/12 ,  C01P2006/80 ,  C01P2006/90

    Abstract: A production process for producing high-purity silica from a crude silica source by means of fluosilic acid, including the steps of: (a) subjecting the crude silica souce and the fluosilicic acid to a reaction in a reaction stage, so as to produce silicon tetrafluoride and water; (b) selectively evaporating the silicon tetrafluoride with respect to at least a portion of at least one impurity derived from the crude silica source, and (c) reacting the silicon tetrafluoride with water to produce the high-purity silica, wherein the reaction stage (a) is performed at a temperature above 75°C.

    Abstract translation: 一种通过氟硅酸从粗二氧化硅源生产高纯度二氧化硅的生产方法，包括以下步骤：（a）在粗反应阶段对粗二氧化硅硅油和氟硅酸进行反应，以生产硅 四氟化物和水; （b）相对于来自粗二氧化硅源的至少一种杂质的至少一部分选择性地蒸发四氟化硅，和（c）使四氟化硅与水反应以产生高纯度二氧化硅，其中反应阶段 a）在75℃以上的温度下进行

    同位体濃縮方法
    7.
    发明申请
    同位体濃縮方法 审中-公开
    同位素浓度法

    公开(公告)号：WO2007029797A1

    公开(公告)日：2007-03-15

    申请号：PCT/JP2006/317809

    申请日：2006-09-08

    Applicant: ステラケミファ株式会社 ,  脇 雅秀 ,  宮本 和博

    Inventor： 脇 雅秀 ,  宮本 和博

    IPC: B01D59/32 ,  C01B33/02 ,  C01B33/107

    CPC classification number: C01B33/107 ,  B01D59/32 ,  C01B33/103 ,  Y10S423/07

    Abstract: 　本発明に係る同位体濃縮方法は、Ｈ ２ Ｏ－Ｈ ２ ＳｉＦ ６ ・ｎＳｉＦ ４ （式中、ｎ≧０である。）の２成分を少なくとも含む水溶液と、前記ＳｉＦ ４ を含む気体との間での同位体交換により、前記Ｓｉの安定同位体を濃縮することを特徴とする。  

    Abstract translation: 一种同位素浓缩方法，包括以下步骤：在含有至少两种组分的水溶液之间进行同位素交换，每个组分各自由下式表示：H 2 2 2 SiF 6 nSiF 4（其中n = 0）和含有SiF 4的气体以浓缩稳定的Si同位素。

    PROCESS FOR REMOVING FLUORIDE FROM A WASTEWATER AND PRODUCING HYDROFLUORIC ACID THEREFROM
    9.
    发明申请
    PROCESS FOR REMOVING FLUORIDE FROM A WASTEWATER AND PRODUCING HYDROFLUORIC ACID THEREFROM 审中-公开
    从废水中除去氟化物并生产氢氟酸的方法

    公开(公告)号：WO1990008730A1

    公开(公告)日：1990-08-09

    申请号：PCT/US1990000230

    申请日：1990-01-19

    Applicant: FLORIDA RECOVERIES PARTNERSHIP

    Inventor： FLORIDA RECOVERIES PARTNERSHIP ,  BERRY, William, Wesley ,  ROSSITER, Gordon, John

    IPC: C01B07/19

    CPC classification number: C01B33/103 ,  C01B7/191 ,  C01B7/193 ,  C01B7/194 ,  C02F1/20 ,  C02F1/42 ,  C02F1/5236 ,  C02F1/583 ,  C02F1/66

    Abstract: A process for producing hydrofluoric acid from SiF6 2- in wastewater is disclosed. The process is carried out by: i) combining (N H4)2SO4, (II) at a pH high enough such that the sulfate is in its divalent state, with SiF6 2- from said wastewater (I) in an amount in excess of that stoichiometrically required to form (NH4) 2 SiF 6 as follows: (NH4) 2SO4 + SiFe 2- (NH4) 2SiF 6 + SO4 2- ii) concentrating a solution including (NH4) 2SiF6 and excess (NH4) 2 SO4 (II) to precipitate and separate (NH4) 2 SiF 6 of high purity there (VIII); iii) re-solubilizing the (NH4) 2SiF 6 (XII) for reaction with NH 4 OH to form NH 4 F liquor (XIV) and precipitated Si (OH)4 (XV); iv) separating the NH 4F liquor (XIV) from the precipitated Si (OH)4 (XVI); v) reacting the NH 4 F with water to form precipitated NH 4 F. HF (XVIII) and ammonia gas; vi) reacting NH 4 F.HF (XVIII) with NaF (XIX) to yield precipitated NaF.HF (XX) and NH 4 F liquor (XXI) and (XXI); and vii) heating and decomposing the NaF.HF into HF (XXIII) and NaF (XXII).

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