公开(公告)号：WO2009073326A1

公开(公告)日：2009-06-11

申请号：PCT/US2008/083210

申请日：2008-11-12

Applicant: CREE, INC.

Inventor： KONSTANTINOV, Andrei ,  HARRIS, Christopher ,  SVEDERG, Jan-Olov

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/24 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/7828 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66666

Abstract: A short gate high power metal oxide semiconductor field effect transistor formed in a trench includes a short gate having gate length defined by spacers within the trench. The transistor further includes a buried region that extends beneath the trench and beyond a corner of the trench, that effectively shields the gate from high drain voltage, to prevent short channel effects and resultantly improve device performance and reliability.

Abstract translation: 形成在沟槽中的短栅极高功率金属氧化物半导体场效应晶体管包括具有由沟槽内的间隔物限定的栅极长度的短栅极。 晶体管还包括在沟槽下方延伸并超出沟槽的角部的掩埋区域，其有效地屏蔽栅极与高漏极电压，以防止短路效应并从而提高器件性能和可靠性。