公开(公告)号：WO2003007451A1

公开(公告)日：2003-01-23

申请号：PCT/US2002/022198

申请日：2002-07-12

Applicant: CREE MICROWAVE, INC.

Inventor： BREWER, Kenneth, P. ,  BARTLOW, Howard, D. ,  DARMAWAN, Johan, A.

IPC: H02H9/00

CPC classification number: H01L23/60 ,  H01L23/66 ,  H01L24/48 ,  H01L27/0255 ,  H01L2223/6655 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2924/00014 ,  H01L2924/12035 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13063 ,  H01L2924/14 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03K17/08122 ,  H01L2924/00 ,  H01L2224/45099

Abstract: An RF power device comprising a power transistor fabricated in a first semiconductor chip and a MOSCAP type structure fabricated in a second semiconductor chip. A voltage limiting device is provided for protecting the power transistor from input voltage spikes and is preferably fabricated in the semiconductor chip along with the MOSCAP. Alternatively, the voltage limiting device can be a discrete element fabricated on or adjacent to the capacitor semiconductor chip. By removing the voltage limiting device from the power transistor chip, fabrication and testing of the voltage limiting device is enhanced, and semiconductor area for the power device is increased and aids in flexibility of device fabrication.

Abstract translation: 一种RF功率器件，包括制造在第一半导体芯片中的功率晶体管和在第二半导体芯片中制造的MOSCAP型结构。 提供了一种电压限制装置，用于保护功率晶体管不受输入电压尖峰影响，并且优选地与MOSCAP一起制造在半导体芯片中。 或者，电压限制装置可以是制造在电容器半导体芯片上或与电容器半导体芯片相邻的分立元件。 通过从功率晶体管芯片去除限压器件，增强了限压器件的制造和测试，增加了功率器件的半导体面积，有助于器件制造的灵活性。