公开(公告)号：WO2014205326A1

公开(公告)日：2014-12-24

申请号：PCT/US2014/043368

申请日：2014-06-20

Applicant: FIRST SOLAR, INC.

Inventor： DUGGAL, Anil, Raj ,  SHIANG, Joseph, John ,  HUBER, William, Hullinger ,  HALVERSON, Adam, Fraser

IPC: H01L31/0352

CPC classification number: H01L31/0272 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.

Abstract translation: 介绍了光伏器件。 光伏器件包括层叠; 并且在层叠上设置吸收层。 吸收层包括镉，碲和硒。 半导体层还设置在吸收层上，其中半导体层和吸收层之间的价带偏移小于约1.3电子伏特，并且半导体层的带隙在约1.2电子伏特至 约3.5电子伏特。

公开(公告)号：WO2014197143A1

公开(公告)日：2014-12-11

申请号：PCT/US2014/036503

申请日：2014-05-02

Applicant: FIRST SOLAR, INC.

Inventor： BLAYDES, Holly, Ann ,  ANDREINI, Kristian, William ,  HUBER, William, Hullinger ,  HINNERS, Eugene, Thomas ,  SHIANG, Joseph, John ,  LIANG, Yong ,  CHOI, Jongwoo ,  HALVERSON, Adam, Fraser

IPC: H01L27/098 ,  H01L27/14 ,  H01L27/142

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.

Abstract translation: 介绍了光伏器件。 光伏器件包括层叠; 并且在层叠上设置吸收层。 吸收层包括硒，并且硒的原子浓度在吸收层的厚度上非线性地变化。 还提出了制造光伏器件的方法。

公开(公告)号：WO2014093820A1

公开(公告)日：2014-06-19

申请号：PCT/US2013/075010

申请日：2013-12-13

Applicant: FIRST SOLAR, INC.

Inventor： KOREVAAR, Bastiaan, Arie ,  CAO, Jinbo ,  HALVERSON, Adam, Fraser ,  FELDMAN-PEABODY, Scott, Daniel ,  PAVOL, Mark, Jeffrey ,  JENSEN, Douglas, Garth

IPC: H05B41/39

CPC classification number: H01L31/1864 ,  H01L31/03925 ,  H01L31/048 ,  H01L31/049 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.

Abstract translation: 提出了一种处理半导体组件的方法。 该方法包括制造包括半导体组件的光伏模块。 制造步骤包括对半导体组件执行效率提高处理，其中效率提高处理包括使半导体组件的光浸泡，以及加热半导体组件。 半导体组件包括平均厚度小于约80纳米的窗口层，其中窗口层包括镉和硫。 还提出了一个相关的系统。