公开(公告)号：WO2008154519A1

公开(公告)日：2008-12-18

申请号：PCT/US2008/066369

申请日：2008-06-09

Applicant: GRANDIS, INC. ,  CHEN, Eugene, Youjun ,  APALKOV, Dmytro

Inventor： CHEN, Eugene, Youjun ,  APALKOV, Dmytro

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A method and system for providing a magnetic element and memory utilizing the magnetic element are described. The magnetic element includes a reference layer, a nonferromagnetic spacer layer, and a free layer. The reference layer has a resettable magnetization that is set in a selected direction by a magnetic field generated externally to the reference layer. The reference layer is also magnetically thermally unstable at an operating temperature range and has KuV/kBT is less than fifty five. The spacer layer resides between the reference layer and the free layer. In addition, the magnetic element is configured to allow the free layer to be switched to each of a plurality of states when a write current is passed through the magnetic element.

Abstract translation: 描述了利用磁性元件提供磁性元件和存储器的方法和系统。 磁性元件包括参考层，非铁磁隔离层和自由层。 参考层具有通过在参考层外部产生的磁场而在选定方向上设定的可复位磁化强度。 参考层在工作温度范围内也是磁性不稳定的，KuV / kBT小于五十五。 间隔层位于参考层和自由层之间。 此外，磁性元件被配置为当写入电流通过磁性元件时允许自由层切换到多个状态中的每一个状态。

公开(公告)号：WO2008156967A1

公开(公告)日：2008-12-24

申请号：PCT/US2008/064794

申请日：2008-05-23

Applicant: GRANDIS, INC. ,  APALKOV, Dmytro ,  LI, Zhanjie

Inventor： APALKOV, Dmytro ,  LI, Zhanjie

IPC: G11C11/15

CPC classification number: G11C11/1675 ,  G11C11/161

Abstract: A method and system for providing a magnetic element is described. The magnetic element includes a first pinned layer, a first spacer layer, a free layer, a second spacer layer, and a second pinned layer. The first and second pinned layers have first and magnetizations oriented in first and second directions, respectively. The first and second spacer layers are nonferromagnetic. The first and second spacer layers are between the free layer and the first and second pinned layers, respectively. The magnetic element is configured either to allow the free layer to be switched to each of multiple states when both a unidirectional write current is passed through the magnetic element and the magnetic element is subjected to a magnetic field corresponding to the each states or to allow the free layer to be switched to each of the plurality of states utilizing a write current and an additional magnetic field that is applied from at least one of the first pinned layer and the second pinned layer substantially only if the write current is also applied.

Abstract translation: 描述了一种用于提供磁性元件的方法和系统。 磁性元件包括第一固定层，第一间隔层，自由层，第二间隔层和第二固定层。 第一和第二固定层分别具有在第一和第二方向上取向的第一和第二磁化。 第一和第二间隔层是非铁磁性的。 第一和第二间隔层分别位于自由层和第一和第二钉扎层之间。 磁元件被配置为允许当单向写入电流通过磁性元件并且磁性元件经受对应于每个状态的磁场时，自由层被切换到多个状态中的每一个状态，或者允许 利用写入电流和从第一被钉扎层和第二固定层中的至少一个施加的附加磁场，基本上仅在写入电流也被施加时，自由层被切换到多个状态中的每一个状态。

公开(公告)号：WO2012021297A1

公开(公告)日：2012-02-16

申请号：PCT/US2011/045662

申请日：2011-07-28

Applicant: GRANDIS, INC. ,  APALKOV, Dmytro

Inventor： APALKOV, Dmytro

IPC: H01L43/08 ,  H01F10/32

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a magnetic anisotropy, at least a portion of which is a biaxial anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了一种用于提供可用于磁性装置中的磁结的方法和系统。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层具有磁各向异性，其至少一部分是双轴各向异性的。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：WO2007011881A2

公开(公告)日：2007-01-25

申请号：PCT/US2006/027715

申请日：2006-07-18

Applicant: GRANDIS, INC. ,  APALKOV, Dmytro ,  HUAI, Yiming

Inventor： APALKOV, Dmytro ,  HUAI, Yiming

IPC: G11B5/127 ,  H01L21/00 ,  G11B5/33 ,  G11C11/15 ,  G11C11/00

CPC classification number: G01R33/093 ,  G11C11/16

Abstract: A method and system for providing a magnetic element and a memory using the magnetic element are described. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The spacer layer is nonferromagnetic and resides between the pinned layer and the free layer. At least the free layer has a first end portion, a second end portion and a central portion between the first end portion and the second end portion. The first end portion, the second end portion and the central portion form an S-shape. At least one of the first end portion and the second end portion includes a curve. The magnetic element is also configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.

Abstract translation: 描述了使用磁性元件提供磁性元件和存储器的方法和系统。 该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。 间隔层是非铁磁性的并且位于被钉扎层和自由层之间。 至少自由层具有在第一端部和第二端部之间的第一端部，第二端部和中心部分。 第一端部，第二端部和中央部形成S形。 第一端部和第二端部中的至少一个包括曲线。 磁性元件还被配置为允许自由层至少部分地由于当写入电流通过磁性元件时的自旋转移而被切换。

公开(公告)号：WO2007047311A2

公开(公告)日：2007-04-26

申请号：PCT/US2006/039744

申请日：2006-10-11

Applicant: GRANDIS, INC. ,  APALKOV, Dmytro ,  DIAO, Zhitao ,  DING, Yunfel ,  HUAI, Yiming

Inventor： APALKOV, Dmytro ,  DIAO, Zhitao ,  DING, Yunfel ,  HUAI, Yiming

IPC: H01L47/00 ,  H01L29/00

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3227 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/10

Abstract: A method and system for providing a magnetic element and a memory incorporating the magnetic element is described. The method and system for providing the magnetic element include providing a pinned layer, a spacer layer, and a free layer. The free layer includes granular free layer having a plurality of grains in a matrix, the spacer layer residing between the pinned layer and the free layer. The magnetic element is configured to allow the granular free layer to be switched due to spin-transfer when a write current is passed through the magnetic element.

Abstract translation: 描述了用于提供磁性元件的方法和系统以及结合有磁性元件的存储器。 用于提供磁性元件的方法和系统包括提供钉扎层，间隔层和自由层。 自由层包括在矩阵中具有多个晶粒的颗粒状自由层，间隔层位于被钉扎层和自由层之间。 磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许粒状自由层被切换。