INDIVIDUALLY SWITCHED FIELD EMISSION ARRAYS
    1.
    发明申请
    INDIVIDUALLY SWITCHED FIELD EMISSION ARRAYS 审中-公开
    个别开关场排放阵列

    公开(公告)号:WO2014124041A2

    公开(公告)日:2014-08-14

    申请号:PCT/US2014014926

    申请日:2014-02-05

    Abstract: An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.

    Abstract translation: 公开了一种电子束装置,其包括设置在至少一个场发射器阵列中的多个电流源元件。 每个电流源元件可以是门控垂直晶体管,非门控垂直晶体管或接近光调制电流源的电流控制通道。 电子束装置包括多个场发射器尖端,多个场发射器尖端中的每个场发射极尖端耦合到多个电流源元件的电流源元件。 电子束装置被配置为允许选择性地激活一个或多个电流源元件。

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