公开(公告)号：WO2021050984A1

公开(公告)日：2021-03-18

申请号：PCT/US2020/050544

申请日：2020-09-11

Applicant: HEFEI RELIANCE MEMORY LIMITED

Inventor： MANEA, Danut

IPC: G11C11/21 ,  G11C11/4063 ,  G11C11/409 ,  G11C11/40 ,  G11C11/34 ,  G11C5/14

Abstract: Circuits and methods are disclosed for voltage-mode bit line precharge for random-access memory cells. A circuit includes an array of random access memory cells; a low-impedance voltage source configured to provide a precharge voltage; and a control circuit configured to precharge a bit line of one of the random access memory cells to the precharge voltage using the low-impedance voltage source prior to reading the one of the random access memory cells.