Abstract:
Printing methods and systems are described herein. In one example, a method includes rasterizing a document to create color rasters and linearizing the color rasters to create high drop weight (HDW) planes and low drop weight (LDW) planes. HDW and LDW halftone planes are created from the HDW and LDW planes. The HDW and LDW halftone planes are masked to create HDW and LDW printhead maps, and the HDW and LDW printhead maps are merged into print data. The print data is sent to a number of printheads.
Abstract:
In an embodiment, a fluid flow structure includes a micro device embedded in a molding. A fluid feed hole is formed through the micro device, and a saw defined fluid channel is cut through the molding to fluidically couple the fluid feed hole with the channel.
Abstract:
A fluid ejection device includes a fluid chamber (110/210), a fluid restriction (120/220) communicated with the fluid chamber, and a fluid channel (130/230) communicated with the fluid restriction, wherein a width of the fluid restriction is in a range of approximately 8 microns to approximately 16 microns, and a length of the fluid restriction is in a range of approximately 5 microns to approximately 20 microns.
Abstract:
Printheads and printers are described herein. In one example, a printhead includes a plurality of nozzles configured to eject ink drops of different sizes wherein a low drop weight (LDW) drop is ejected through a nozzle with a circular bore (CB), and a high drop weight (HDW) drop is ejected through a nozzle with a non-circular bore (NCB).
Abstract:
The present disclosure is drawn to amorphous thin metal films and associated methods. Generally, an amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at% to 90 at% of a metalloid selected from the group of carbon, silicon, and boron; 5 at% to 90 at% of a first metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum; and 5 at% to 90 at% of a second metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum, wherein the second metal is different than the first metal. Typically, the three elements account for at least 70 at% of the amorphous thin metal film.
Abstract:
In one example in accordance with the present disclosure a printer cartridge is described. The printer cartridge includes multiple backpressure chambers in fluid communication with a shared free fluid chamber. The backpressure chambers are to supply a fluid to nozzles of a portion of a fluidic ejection assembly and to provide backpressure to the nozzles of the fluidic ejection assembly during deposition of fluid onto a print medium.
Abstract:
Printheads and printers are described herein. In one example, a printhead includes a number of drop generators disposed in a first array and a second array. The drop generators in both the first array and the second array are spaced one dot pitch apart perpendicular to the motion of a print medium, and alternate between a high drop weight (HDW) drop generator and a low drop weight (LDW) drop generator. Each drop generator in the first array is in a line of the motion of the print medium with a corresponding drop generator in the second array, wherein each HDW drop generator in the first array is in line with an LDW drop generator in the second array, and each LDW drop generator in the first array is in line with an HDW drop generator in the second array.
Abstract:
According to examples, an ejection nozzle may include an ejection nozzle orifice to eject printing material, and a service nozzle may include a service nozzle orifice to eject service fluid.
Abstract:
The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.
Abstract:
In one example, a process for making a micro device structure includes molding a micro device in a monolithic body of material and forming a fluid flow passage in the body through which fluid can pass directly to the micro device.