公开(公告)号：WO2003085744A1

公开(公告)日：2003-10-16

申请号：PCT/US2003/010266

申请日：2003-04-03

Applicant: HONEYWELL INTERNATIONAL INC.

Inventor： LIU, Michael, S. ,  FECHNER, Paul, S. ,  REKSTAD, Jane, Kathleen ,  SINHA, Shankar, P.

IPC: H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/42392 ,  H01L29/6675 ,  H01L29/78651

Abstract: An SOI GAA device is created by etching a buried oxide layer of an SOI wafer structure that is provided over a silicon substrate. A portion of the buried oxide layer remains over the silicon substrate after etching. A plurality of silicon fingers is formed so that the silicon fingers extend over the remaining buried oxide layer. A gate oxide is formed all around each of the silicon fingers, and a common silicon gate is formed all around all of the gate oxides. A common source and a common drain are formed by suitably doping opposite ends of the silicon fingers leaving a channel therebetween.

Abstract translation: 通过蚀刻设置在硅衬底上的SOI晶片结构的掩埋氧化物层来产生SOI GAA器件。 在蚀刻之后，一部分掩埋氧化物层保留在硅衬底上。 形成多个硅指以使得硅指延伸超过剩余的掩埋氧化物层。 在每个硅指的周围形成栅极氧化物，并且在所有栅极氧化物周围形成共同的硅栅极。 共同的源极和公共漏极通过适当地掺杂硅指的相对端而在其间留下通道而形成。