公开(公告)号：WO1989002697A1

公开(公告)日：1989-03-23

申请号：PCT/US1988002577

申请日：1988-07-29

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  ROOT, Randolph, E. ,  VU, Thanh, T.

IPC: H05K03/10

CPC classification number: C04B41/0072 ,  C04B41/009 ,  C04B2111/00844 ,  H01C17/28 ,  H01L21/4846 ,  H01L21/486 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01039 ,  H05K1/0306 ,  H05K3/0029 ,  H05K3/105 ,  H05K3/4038 ,  H05K2203/107 ,  H05K2203/1136 ,  C04B41/4556 ,  C04B41/4572 ,  C04B41/51 ,  C04B35/00 ,  H01L2924/00014

Abstract: A process for forming electrically conductive circuitry on a metallic nonconductive substrate or insulating layer which includes the steps of providing a nonconductive ceramic substrate having a metallic component and which can dissociate into its constituent components to provide dissociated metal bonded to the ceramic substrate upon application of laser energy. Laser energy is then applied to predetermined areas of the surface of the nonconductive ceramic substrate to provide dissociated metallic conductors in the predetermined areas. The disclosed process further includes the formation of metallized through holes by application of laser energy to the nonconductive ceramic substrate to form a through hole, whereby dissociated metal is formed on the inside of the through hole. The disclosed process also includes the capability to down trim a thick film or thin film resistor which is conductively coupled between two areas of metallization. Laser energy is applied to a portion of the thick film or thin film resistor and to a portion of the metallic nonconductive ceramic substrate in a predetermined pattern to provide a continuous dissociated metallic conductor which passes through the thick film or thin film resistor and is conductively connected to one of two areas of electrically conductive metallization.

Abstract translation: 一种用于在金属非导电衬底或绝缘层上形成导电电路的工艺，其包括以下步骤：提供具有金属组分的非导电陶瓷衬底，并且可以将其分解成其组成组分，以在施加激光时提供与陶瓷衬底结合的解离金属 能源。 然后将激光能量施加到非导电陶瓷衬底的表面的预定区域，以在预定区域中提供解离的金属导体。 所公开的方法还包括通过向非导电陶瓷基板施加激光能量形成金属化通孔以形成通孔，由此在通孔的内部形成解离的金属。 所公开的方法还包括对在两个金属化区域之间导电耦合的厚膜或薄膜电阻进行下修的能力。 将激光能量以预定图案施加到厚膜或薄膜电阻器的一部分和金属非导电陶瓷基板的一部分上，以提供穿过厚膜或薄膜电阻器的连续解离的金属导体，并且导电连接 到导电金属化的两个区域之一。