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公开(公告)号：WO2023081442A1
公开(公告)日：2023-05-11
申请号：PCT/US2022/049094
申请日：2022-11-07
Applicant: INPRIA CORPORATION
Inventor： JIANG, Kai , TELECKY, Alan J. , MEYERS, Stephen T.
IPC: C07F7/22 , G03F7/004 , G03F7/0042 , G03F7/0048
Abstract: An organotin precursor solution is described comprising an organic solvent, an optional additive, and an organotin composition represented by one or more organotin compounds represented by the formula RSnL3, wherein each R is independently a hydrocarbyl ligand having from 1 to 31 carbon atoms and each L is independently a hydrolysable ligand, wherein the total concentration of Sn is from about 0.001M to about 0.5 M/ The solvent can comprises a linear alcohol with from 1 to 6 carbon atoms, and the organotin precursor solution can have an initial water content from about 100 ppm to about 10,000 ppm, in which the organotin precursor solution has a reduced rate of water dissipation relative to an equivalent organotin precursor solution formed with 4-methyl-2-pentanol. The organo precursor solutions can be prepared through the selection of an appropriate stabilizing compound, which can be a linear, short chain alcohol and an appropriate additive.
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公开(公告)号：WO2019195522A2
公开(公告)日：2019-10-10
申请号：PCT/US2019/025739
申请日：2019-04-04
Applicant: INPRIA CORPORATION
Inventor： CARDINEAU, Brian, J. , EARLEY, William , MEYERS, Stephen, T. , JIANG, Kai , ANDERSON, Jeremy, T.
IPC: C07F7/22
Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC) 3 SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.
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3.发明申请METHODS OF REDUCING METAL RESIDUE IN EDGE BEAD REGION FROM METAL-CONTAINING RESISTS 审中-公开从含金属的材料中减少边缘区域中的金属残留物的方法
公开(公告)号：WO2018031896A1
公开(公告)日：2018-02-15
申请号：PCT/US2017/046518
申请日：2017-08-11
Applicant: INPRIA CORPORATION
Inventor： WALLER, Mollie , CARDINEAU, Brian, J. , JIANG, Kai , TELECKY, Alan, J. , MEYERS, Stephen, T. , CLARK, Benjamin, L.
Abstract: Methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.
Abstract translation: 描述了用于去除与包含含金属的抗蚀剂组合物的抗蚀剂涂层相关联的晶片上的边缘珠粒的方法。 所述方法可以包括在用金属基抗蚀剂组合物旋涂晶片之后沿着晶片边缘施加第一珠缘冲洗溶液，其中边缘珠溶液包含有机溶剂和添加剂，所述添加剂包含羧酸，无机氟化酸， 四烷基铵化合物或其混合物。 可选地或另外地，所述方法可以包括在进行边缘珠冲洗之前将保护性组合物施加到晶片。 保护性组合物可以是牺牲材料或防粘连材料，并且在保护性组合物的情况下，保护性组合物可以仅施加到晶片边缘或整个晶片上。 介绍了使用这些方法处理晶片的相应装置。
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4.发明申请ORGANOMETALLIC SOLUTION BASED HIGH RESOLUTION PATTERNING COMPOSITIONS AND CORRESPONDING METHODS 审中-公开基于有机溶液的高分辨率图案组合物和相关方法
公开(公告)号：WO2016065120A1
公开(公告)日：2016-04-28
申请号：PCT/US2015/056865
申请日：2015-10-22
Applicant: INPRIA CORPORATION
Inventor： MEYERS, Stephen, T. , ANDERSEN, Jeremy , EDSON, Joseph, Burton , JIANG, Kai , KESZLER, Douglas, A. , KOCSIS, Michael, K. , TELECKY, Alan, J. , CARDINEAU, Brian
CPC classification number: G03F7/0042 , G03F7/0043 , G03F7/2004 , G03F7/32 , G03F7/322 , G03F7/325
Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.
Abstract translation: 基于具有烷基配体的锡离子来描述有机金属辐射抗蚀剂组合物。 一些组合物具有支链烷基配体以提供改进的图案对比，同时保持高度的溶液稳定性。 具有不同烷基配体的化合物的共混物可以提供图案化方面的进一步改进。 具有不超过25nm的半间距的高分辨率图案可以实现不超过约4.5nm的线宽粗糙度。 已经开发了允许形成具有非常低的金属污染物的烷基氧化锡氢氧化物组合物的合成技术。
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5.发明申请
公开(公告)号：WO2019246254A1
公开(公告)日：2019-12-26
申请号：PCT/US2019/037972
申请日：2019-06-19
Applicant: INPRIA CORPORATION
Inventor： JIANG, Kai , MEYERS, Stephen T. , MCQUADE, Lauren B. , ANDERSON, Jeremy T. , CARDINEAU, Brian J. , CLARK, Benjamin L. , SMIDDY, Dominick , WILSON-MOSES, Margaret
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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Patent Agency Ranking6.发明申请
公开(公告)号：WO2019099981A3
公开(公告)日：2019-05-23
申请号：PCT/US2018/061769
申请日：2018-11-19
Applicant: INPRIA CORPORATION
Inventor： CARDINEAU, Brian, J. , MEYERS, Stephen, T. , JIANG, Kai , EARLEY, William
Abstract: Organotin clusters are described with the formula R 3 Sn 3 (O 2 CR`) 5-x (OH) 2+x (μ3 - O) with 0 ≤ x ≤2; R = branched or cycloalkyl with I to 31 carbon atoms; R' = H or alkyl with 1 to 20 carbon atoms. Three carboxylato ligands are bridging, and two OH ligands are bridging. The remaining two carboxylato ligands are in non-bridging configurations, and the non-bridging carboxylato ligands are exchangeable in solution. Solutions of these clusters are suitable for forming radiation sensitive coatings that can be used to pattern nanometer scale structures. The radiation sensitive coatings are particularly suitable for EUV patterning.
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公开(公告)号：WO2017066319A3
公开(公告)日：2017-04-20
申请号：PCT/US2016/056637
申请日：2016-10-12
Applicant: INPRIA CORPORATION
Inventor： MEYERS, Stephen, T. , ANDERSON, Jeremy, T. , CARDINEAU, Brian, J. , EDSON, Joseph, B. , JIANG, Kai , KESZLER, Douglas, A. , TELECKY, Alan, J.
Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
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8.发明申请
公开(公告)号：WO2019099981A2
公开(公告)日：2019-05-23
申请号：PCT/US2018/061769
申请日：2018-11-19
Applicant: INPRIA CORPORATION
Inventor： CARDINEAU, Brian, J. , MEYERS, Stephen, T. , JIANG, Kai , EARLEY, William
Abstract: Organotin clusters are described with the formula R 3 Sn 3 (O 2 CR`) 5-x (OH) 2+x (μ3 - O) with 0 ≤ x ≤2; R = branched or cycloalkyl with I to 31 carbon atoms; R' = H or alkyl with 1 to 20 carbon atoms. Three carboxylato ligands are bridging, and two OH ligands are bridging. The remaining two carboxylato ligands are in non-bridging configurations, and the non-bridging carboxylato ligands are exchangeable in solution. Solutions of these clusters are suitable for forming radiation sensitive coatings that can be used to pattern nanometer scale structures. The radiation sensitive coatings are particularly suitable for EUV patterning.
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9.发明申请ORGANOTIN OXIDE HYDROXIDE PATTERNING COMPOSITIONS, PRECURSORS, AND PATTERNING 审中-公开有机氢氧化物氢氧化物图案组合物，前体和图案
公开(公告)号：WO2017066319A8
公开(公告)日：2017-04-20
申请号：PCT/US2016/056637
申请日：2016-10-12
Applicant: INPRIA CORPORATION
Inventor： MEYERS, Stephen, T. , ANDERSON, Jeremy, T. , CARDINEAU, Brian, J. , EDSON, Joseph, B. , JIANG, Kai , KESZLER, Douglas, A. , TELECKY, Alan, J.
Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
Abstract translation: 描述了有机金属前体用于形成基于金属氧化物氢氧化物化学的高分辨率光刻图案化涂层。 前体组合物通常包含在适度条件下易被水蒸气或其它OH源组合物水解的配体。 有机金属前体通常包含对锡的辐射敏感有机配体，其可产生对于在相对低的辐射剂量下高分辨率图案化有效的涂层，并且对于EUV图案化特别有用。 前体组合物在商业上合适的条件下易于加工。 采用原位水解或蒸汽沉积的溶液相处理可用于形成涂层。
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公开(公告)号：WO2017066319A2
公开(公告)日：2017-04-20
申请号：PCT/US2016/056637
申请日：2016-10-12
Applicant: INPRIA CORPORATION
Inventor： MEYERS, Stephen, T. , ANDERSON, Jeremy, T. , CARDINEAU, Brian, J. , EDSON, Joseph, B. , JIANG, Kai , KESZLER, Douglas, A. , DARDI, Peter S.
CPC classification number: G03F7/0042 , G03F7/162 , G03F7/2004 , G03F7/325 , G03F7/40
Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
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