公开(公告)号：WO2005043249A3

公开(公告)日：2005-09-15

申请号：PCT/US2004034599

申请日：2004-10-18

Applicant: INTEL CORP ,  BORODOVSKY YAN

Inventor： BORODOVSKY YAN

IPC: G03F7/20

CPC classification number: G03F7/70408 ,  G03F7/7045

Abstract: A composite patterning technique may include two lithography processes. A first lithography process may use interference lithography to form an interference pattern of lines of substantially equal width and spaces on a photoresist. A second lithography process may use one or more non-interference lithography techniques, such as optical lithography, imprint lithography and electron-beam lithography, to break continuity of the patterned lines and form desired integrated circuit features.

Abstract translation: 复合图案化技术可以包括两个光刻工艺。 第一光刻工艺可以使用干涉光刻来形成光致抗蚀剂上具有基本相等的宽度和空间的线的干涉图案。 第二光刻工艺可以使用一种或多种非干涉光刻技术，例如光刻，压印光刻和电子束光刻，以破坏图案化线的连续性并形成所需的集成电路特征。

公开(公告)号：WO2005040920A2

公开(公告)日：2005-05-06

申请号：PCT/US2004033434

申请日：2004-10-07

Applicant: INTEL CORP ,  BORODOVSKY YAN

Inventor： BORODOVSKY YAN

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/70408 ,  G03F7/0035 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/70433

Abstract: Systems and techniques for printing substrates. In one implementation, a method includes patterning a substrate with a substantially arbitrary arrangement of features by introducing irregularity into a repeating array of features.

Abstract translation: 用于印刷基材的系统和技术。 在一个实施方式中，一种方法包括通过将不规则性引入特征的重复阵列中，以基本上任意的特征排列图案化基板。

公开(公告)号：WO2005036274A2

公开(公告)日：2005-04-21

申请号：PCT/US2004033070

申请日：2004-10-06

Applicant: INTEL CORP

Inventor： BORODOVSKY YAN

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F7/203 ,  G03F7/70408

Abstract: A composite patterning technique may include two lithography processes. A first lithography process may use interference lithography to form a continuous pattern of lines of substantially equal width on a photoresist. A second lithography process may use one or more non-interference lithography techniques, such as optical lithography, imprint lithography and electron-beam lithography, to break continuity of the patterned lines and form desired integrated circuit features.

Abstract translation: 复合图案化技术可以包括两个光刻工艺。 第一光刻工艺可以使用干涉光刻在光致抗蚀剂上形成基本相等宽度的线的连续图案。 第二光刻工艺可以使用一种或多种非干涉光刻技术，例如光刻，压印光刻和电子束光刻，以破坏图案化线的连续性并形成所需的集成电路特征。

公开(公告)号：WO2005036273A3

公开(公告)日：2005-09-22

申请号：PCT/US2004033066

申请日：2004-10-06

Applicant: INTEL CORP

Inventor： BORODOVSKY YAN

IPC: G03F7/20

CPC classification number: G03F7/70408 ,  G03F7/7045

Abstract: A composite patterning technique may include three lithography processes. A first lithography process forms a periodic pattern of alternating continuous lines of substantially equal width and spaces on a first photoresist. A second lithography process uses a non-interference lithography technique to break continuity of the patterned lines and form portions of desired integrated circuit features. The first photoresist may be developed. A second photoresist is formed over the first photoresist. A third lithography process uses a non-interference lithography technique to expose a pattern on the second photoresist and form remaining desired features of an integrated circuit pattern.

Abstract translation: 复合图案化技术可以包括三个光刻工艺。 第一光刻工艺在第一光致抗蚀剂上形成具有基本上相等宽度和间隔的交替连续线的周期性图案。 第二光刻工艺使用非干涉光刻技术来中断图案化线的连续性并且形成期望的集成电路特征的部分。 第一光致抗蚀剂可以被显影。 在第一光致抗蚀剂上形成第二光致抗蚀剂。 第三光刻工艺使用非干涉光刻技术来曝光第二光刻胶上的图案并形成集成电路图案的剩余期望特征。

公开(公告)号：WO2005083513A3

公开(公告)日：2006-01-26

申请号：PCT/US2004033432

申请日：2004-10-07

Applicant: INTEL CORP

Inventor： BORODOVSKY YAN

IPC: G03F7/00 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/70433 ,  G03F7/0035 ,  G03F7/203 ,  G03F7/70408 ,  H01L21/0273

Abstract: Systems and techniques for printing substrates. In one implementation, a method includes patterning a substrate with a substantially arbitrary arrangement of features by introducing irregularity into an array of repeating lines and spaces between the lines.

Abstract translation: 用于印刷基材的系统和技术。 在一个实施方案中，一种方法包括通过将不规则性引入到线之间的重复线和间隔的阵列中，以基本上任意的特征排列来图案化衬底。