Abstract:
A method for manufacturing a two terminal or three terminal tandem solar cell comprising a silicon-based bottom solar cell (2) and a thin- film top solar cell (11); the method comprising: providing a silicon substrate (3) with a front surface and a rear surface, carrying out a sequence of steps comprising: creating on the front surface a carrier extracting layer stack (16) comprising at least a carrier extracting layer (8) formed on or in the front surface of the substrate, creating on the rear surface a passivating coating layer comprising deposition of a first AIOx layer (9), creating sacrificial layer stack comprising a second AIOx layer (6) on the carrier extracting layer stack on the front surface; creating metal-based electrical contacts (7) on the rear surface, including an annealing step; removing the sacrificial layer stack from the carrier extracting layer stack, and creating the thin film top solar cell on the carrier extracting layer stack.
Abstract:
A photovoltaic device having an active region comprising a III-V material including Bismuth and one or more other group V elements, the band gap energy of the material is in the range of from 0.4 to 1.4 eV and the spin-orbit splitting energy of the material is in the range of from 0.3 to 0.8 eV.
Abstract:
An intermediate reflector layer in a thin film tandem solar cell is manufactured in that there is deposited a layer by PEDVD in a process atmosphere which is fed by a gas mixture comprising H2, SiH4, a dopant gas and CO2. The flow ratio of H2 to SiH4 is selected to be between 100 and 400 and the CO2 to SiH4 flux ratio is selected as high as possible, thereby maintaining electric conductivity of the layer.
Abstract:
Die Erfindung betrifft eine Dünnschicht-Solarzelle (1), mit einer auf einem transparenten Vorderseiten-Substrat (3) angeordneten ersten Solarzellenkomponente (7), insbesondere auf Basis von amorphem Silizium, und einer hierauf angeordneten und somit in Gebrauchslage unter der ersten Solarzellenkomponente liegenden zweiten Solarzellenkomponente (11), insbesondere auf Basis von mikrokristallinem Silizium, sowie einer zwischen der ersten und zweiten Solarzellenkomponente angeordneten Zwischenreflektorschicht (9), welche aus mehreren übereinander liegenden Teilschichten aufgebaut ist.
Abstract:
A tandem solar cell comprising an amorphous top cell and a microcrystalline bottom cell is described, wherein the plasma deposition of the microcrystalline absorber of the bottom cell is being performed in at least two steps, with the RF power density per flow unit of precursor gas in the second step being chosen to be lower than in the first step whilst the flow ratios of diluent and precursor are being kept constant.
Abstract:
Fabrication of an amorphous silicon oxide film through PECVD technique employing silane gas, hydrogen gas, and carbon dioxide gas for use as the top cell of the a-SiO:H/a-Si:H tandem cell having the structure glass/TCO/ZnO/p(μc-SiO:H)/buffer(a-SiO:H)/i(a-SiO:H)/buffer(μc:Si:H)/n(μc-SiO:H)/p(μc-Si:H)/p(μc-SiO:H)/buffer(a-SiO:H)/i(a-Si:H)/np(μc-SiO:H)/ZnO/Ag; where a Voc value as high as.1.89 V and efficiency of 7.10% are achieved.
Abstract:
In multijunction photovoltaic cells, such as for example tandem solar cells comprising a top sub-cell and a crystalline silicon based bottom sub-cell, efficiency of conversion of solar energy into electrical energy is limited mainly by the junction between a top sub-cell and a bottom sub-cell of the multijunction photovoltaic cell. A multijunction photovoltaic cell of this disclosure at least partially overcomes this drawback because it comprises an intermediate layer of silicon nitride deposited in a conformal manner with a thickness comprised between 1 and 10 nm so as to define a P-N tunnel junction between the top sub-cell and the bottom sub-cell. A related fabrication process is also disclosed.
Abstract:
Dispositif photovoltaïque tandem combinant une sous-cellule à base de silicium et une sous-cellule à base de pérovskite comportant une couche composite pérovskite/matériau de type P ou N La présente invention se rapporte à un dispositif photovoltaïque tandem, comprenant, dans cet ordre de superposition : A/ une sous-cellule A à base de silicium, en particulier à hétérojonction de silicium ou encore d'architecture TOPCon; et B/ une sous-cellule B à base de pérovskite, comprenant au moins : - une couche conductrice ou semi-conductrice de type N dans le cas d'une structure NIP, ou de type P dans le cas d'une structure PIN, et - une couche composite, superposée à ladite couche conductrice ou semi-conductrice inférieure, comprenant au moins un matériau pérovskite et au moins un matériau de type P dans le cas d'une structure NIP ou de type N dans le cas d'une structure PIN, et présentant un gradient du ratio massique matériau pérovskite/matériau P dans le cas d'une structure NIP ou matériau pérovskite/matériau N dans le cas d'une structure PIN, décroissant dans le sens de l'interface entre ladite couche composite et ladite couche conductrice ou semi-conductrice inférieure vers la face opposée de ladite couche composite, la sous-cellule B à base de pérovskite présentant une structure planaire.