公开(公告)号：WO2023285875A1

公开(公告)日：2023-01-19

申请号：PCT/IB2021/060937

申请日：2021-11-24

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： ZHUANG, Zhe ,  IIDA, Daisuke ,  OHKAWA, Kazuhiro

IPC: H01L33/02 ,  H01L33/14 ,  H01L33/42 ,  H01L33/46

Abstract: A light-emitting device includes an n-type layer (202); an active layer (204) that includes quantum wells located over the n-type layer (202), the active layer being configured to generate light; a p-type layer (206) located over the active layer (204), the p-type layer (206) having a non-passivated region (206A) and a passivated region (206B), wherein the non-passivated region (206A) is configured to allow electrical current conduction while the passivated region (206B) is configured to prevent electrical current conduction; a p-electrode (208) located on the p-type layer (206); and an n-electrode (210) located on the n-type layer (202).

公开(公告)号：WO2019012344A1

公开(公告)日：2019-01-17

申请号：PCT/IB2018/054173

申请日：2018-06-08

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： OHKAWA, Kazuhiro

IPC: C23C16/46 ,  C23C16/30

Abstract: A metal organic chemical vapor deposition system includes a reaction chamber, a first heater arranged on a first side of the reaction chamber, and a second heater arranged on a second side of the reaction chamber. A controller is configured to selectively control an amount of heat applied by the second heater to the reaction chamber depending on a type of vapor deposition being performed in the reaction chamber.

公开(公告)号：WO2019180513A1

公开(公告)日：2019-09-26

申请号：PCT/IB2019/050957

申请日：2019-02-06

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： IIDA, Daisuke ,  OHKAWA, Kazuhiro

IPC: H01L33/02 ,  H01L21/02

Abstract: An optoelectronic device includes an oxide substrate, an oxide epitaxial layer arranged on the oxide substrate, and a III-nitride active layer arranged on the oxide epitaxial substrate.

公开(公告)号：WO2019012350A1

公开(公告)日：2019-01-17

申请号：PCT/IB2018/054399

申请日：2018-06-14

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： OHKAWA, Kazuhiro

IPC: H01S5/042 ,  H01S5/32 ,  H01S5/323 ,  H01L33/36 ,  H01L33/40

Abstract: A nitride-based electronic device includes an oxide cladding layer, a nitride cladding layer, and a nitride active region layer arranged between the oxide cladding layer and the nitride cladding layer. First and second metal contacts are electrically coupled to the nitride active region layer. The nitride-based electronic device can be formed in a system in which a non-reactive chamber is arranged between an oxide reaction chamber and a nitride reaction chamber so that oxide and nitride layers can be grown without exposing the device to the environment between growth of the oxide and nitride layers.

公开(公告)号：WO2021260529A1

公开(公告)日：2021-12-30

申请号：PCT/IB2021/055456

申请日：2021-06-21

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： ZHUANG, Zhe ,  IIDA, Daisuke ,  OHKAWA, Kazuhiro

IPC: H01L33/16 ,  H01L33/32 ,  H01L33/18 ,  H01L33/40 ,  H01L33/007

Abstract: An ultraviolet (UV) light emitting diode (LED) (400) includes a substrate (202); a semiconductor buffer layer (204) that is N-polar and is formed on the substrate, wherein the N-polar is achieved by having (1) a nitrogen atom layer in the semiconductor buffer layer at a distal surface from the substrate (202) and (2) a metal atom layer in the semiconductor buffer layer at a proximal surface from the substrate (202); an n-type layer (210) formed over the semiconductor buffer layer (204); an active layer (212) formed over the n-type layer (210) and configured to generate UV light; a p-type layer (214) formed over the active layer (212), which in tandem with the n-type layer (210) form a pn junction; a first electrode (610) formed over the p-type layer (214); and a second electrode (620) formed directly over the n-type layer (210).

公开(公告)号：WO2019116121A1

公开(公告)日：2019-06-20

申请号：PCT/IB2018/059011

申请日：2018-11-15

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： IIDA, Daisuke ,  OHKAWA, Kazuhiro

IPC: H01L31/0336 ,  H01L31/0352 ,  C25B1/06

CPC classification number: H01L31/035236 ,  C25B1/003 ,  H01L31/0336

Abstract: An energy conversion device includes a substrate, a first doped semiconductor layer arranged on the substrate, and an absorption layer arranged on the first doped semiconductor layer. The absorption layer includes a superlattice having a III-nitride layer adjacent to a II-oxide layer.