公开(公告)号：WO2018075225A1

公开(公告)日：2018-04-26

申请号：PCT/US2017/054485

申请日：2017-09-29

Applicant: LAM RESEARCH CORPORATION

Inventor： LEE, William T. ,  VAN SCHRAVENDIJK, Bart J. ,  SMITH, David Charles ,  DANEK, Michael ,  VAN CLEEMPUT, Patrick A. ,  CHANDRASEKHARAN, Ramesh

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/28202 ,  G02F1/133502 ,  H01J37/3244 ,  H01J37/32788 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28211 ,  H01L29/513

Abstract: Efficient integrated sequential deposition of alternating layers of dielectric and conductor, for example oxide/metal or metal nitride, e.g., SiO 2 /TiN, in a single tool, and even in a single process chamber enhances throughput without compromising quality when directly depositing a OMOM stack with many layers. Conductor and dielectric film deposition of a stack of at least 20 conductor/dielectric film pairs in the same processing tool or chamber, without breaking vacuum between the film depositions, such that there is no substantial cross-contamination between the conductor and dielectric film depositions, can be achieved.

Abstract translation: 在单个工具中有效集成顺序沉积电介质和导体（例如氧化物/金属或金属氮化物，例如SiO 2 / TiN）的交替层，并且甚至 在单个处理室中直接沉积具有多层的OMOM堆栈时增强了吞吐量，而不会影响质量。 在同一处理工具或腔室中导体和电介质膜沉积至少20个导体/电介质膜对的堆叠，而不破坏膜沉积之间的真空，使得在导体和电介质膜沉积之间不存在实质的交叉污染， 可以实现。