ASYMMETRIC PURGED BLOCK BENEATH WAFER PLANE TO MANAGE NON-UNIFORMITY

    公开(公告)号:WO2021126848A1

    公开(公告)日:2021-06-24

    申请号:PCT/US2020/065115

    申请日:2020-12-15

    Abstract: A purge baffle for a substrate support includes an annular ring configured to surround an outer perimeter around the substrate support in a volume below the substrate support and a first portion. The first portion includes a plenum defined below the first portion and outside of the annular ring in the volume below the substrate support and a plurality of openings that provide respective flow paths from a region above the first portion into the plenum. At least a first opening of the plurality of openings has a first conductance and at least a second opening of the plurality of openings has a second conductance that is different than the first conductance.

    DYNAMIC TEMPERATURE CONTROL OF SUBSTRATE SUPPORT IN SUBSTRATE PROCESSING SYSTEM

    公开(公告)号:WO2020010153A1

    公开(公告)日:2020-01-09

    申请号:PCT/US2019/040416

    申请日:2019-07-02

    Abstract: A temperature-controlled substrate support for a substrate processing system includes a substrate support located in the processing chamber. The substrate support includes N zones and N resistive heaters, respectively, where N is an integer greater than one. A temperature sensor is located in one of the N zones. A controller is configured to calculate N resistances of the N resistive heaters during operation and to adjust power to N-1 of the N resistive heaters during operation of the substrate processing system in response to the temperature measured in the one of the N zones by the temperature sensor, the N resistances of the N resistive heaters, and N-1 resistance ratios.

    USE OF SIGNAL FILTERING SCHEMES IN HIGH TCR BASED CONTROL

    公开(公告)号:WO2022232014A1

    公开(公告)日:2022-11-03

    申请号:PCT/US2022/026124

    申请日:2022-04-25

    Abstract: A controller to control a temperature of a first substrate support in a substrate processing system includes a resistance calculation module to calculate a first resistance of a first heater element of a plurality of heater elements of the first substrate support, a temperature calculation module to calculate a first temperature of the first heater element based on the calculated first resistance, and a filter module to filter a first signal that corresponds to the calculated first resistance. The temperature calculation module selectively causes the filter module to filter the first signal in response to a determination of whether at least one condition associated with operation of the substrate processing system is met.

    MULTIPLEXED HIGH TCR BASED AMPOULE HEATERS
    8.
    发明申请

    公开(公告)号:WO2020068546A3

    公开(公告)日:2020-04-02

    申请号:PCT/US2019/051886

    申请日:2019-09-19

    Abstract: A system for heating components of a substrate processing system includes a controller and a plurality of heaters arranged at a plurality of locations along a path of fluid flow from a source of fluid to a destination in the substrate processing system. The controller is configured to group the plurality of heaters into a plurality of groups of heaters. Each group of heaters comprises at least one of the plurality of heaters. The controller is further configured to determine a temperature gradient to be maintained across the plurality of groups of heaters. The controller is further configured to select a group of heaters from the plurality of groups of heaters and control power supplied to the selected group of heaters to maintain the temperature gradient across the plurality of groups of heaters.

    TRIM AND DEPOSITION PROFILE CONTROL WITH MULTI-ZONE HEATED SUBSTRATE SUPPORT FOR MULTI-PATTERNING PROCESSES

    公开(公告)号:WO2020167944A1

    公开(公告)日:2020-08-20

    申请号:PCT/US2020/017922

    申请日:2020-02-12

    Abstract: A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values. The solving module, subsequent to the calibration of the temperature control elements, controls operation of the temperature control elements during at least one of a trim or deposition step based on the operating parameters.

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