公开(公告)号：WO2013151812A1

公开(公告)日：2013-10-10

申请号：PCT/US2013/033609

申请日：2013-03-22

Applicant: LAM RESEARCH CORPORATION

Inventor： PANAGOPOULOS, Theodoros ,  HOLLAND, John ,  PATERSON, Alex

IPC: C23C16/455

CPC classification number: H01J37/321 ,  H01J37/3211

Abstract: Methods and apparatus for controlling plasma in a plasma, processing system having at least an inductively coupled plasma (ICP) processing chamber are disclosed. The ICP chamber employs at least a first/center RF coil, a second/edge RF coii disposed concentrically with respect to the firsi/center RF coil, and a RF coil set having at least a third/mid. RF coil disposed concentrically with respect to the first/center RF coil and the second/edge RF coii in a manner such that the third/mid RF coil is disposed in between the first/center RF coil and the second/edge RF coil. During processing, RF currents in the same direction are provided to the first/center RF coil and the second/edge RF coil while RF current in the reverse direction (reiative to the direction of the currents provided to the first/center RF coil and the second'edge RF coil) is provided to the third/mid RF coil.

Abstract translation: 公开了一种用于控制等离子体中的等离子体的方法和装置，具有至少一个电感耦合等离子体（ICP）处理室的处理系统。 ICP室采用至少第一/中心RF线圈，相对于冷杉/中心RF线圈同心设置的第二/边缘RF组件，以及具有至少三分之一/中间的RF线圈组。 RF线圈相对于第一/中心RF线圈和第二/边缘RF组件以与第一/中心RF线圈和第二/边缘RF线圈之间的第三/中间RF线圈布置的方式同心地布置。 在处理期间，向第一/中心RF线圈和第二/边缘RF线圈提供相同方向的RF电流，而反向的RF电流（反向提供给第一/中心RF线圈的电流的方向和 第二'RF射频线圈）提供给第三/中间RF线圈。

公开(公告)号：WO2020185609A1

公开(公告)日：2020-09-17

申请号：PCT/US2020/021520

申请日：2020-03-06

Applicant: LAM RESEARCH CORPORATION

Inventor： LILL, Thorsten ,  BERRY III, Ivan L. ,  PANAGOPOULOS, Theodoros

IPC: H01J37/32 ,  H01L21/3065

Abstract: High aspect ratio features are etched using a plasma etching apparatus that can alternate between accelerating negative ions of reactive species at a low energy and accelerating positive ions of inert gas species at a high energy. The plasma etching apparatus can be divided into at least two regions that separate a plasma-generating space from an ionization space. Negative ions of the reactive species can be generated by electron attachment ionization in the ionization space when a plasma is ignited in the plasma-generating space. Positive ions of the inert gas species can be generated by Penning ionization in the ionization space when the plasma is quenched in the plasma-generating space.

公开(公告)号：WO2022060562A1

公开(公告)日：2022-03-24

申请号：PCT/US2021/048276

申请日：2021-08-30

Applicant: LAM RESEARCH CORPORATION

Inventor： PANAGOPOULOS, Theodoros ,  MARAKHTANOV, Alexei M. ,  JI, Bing ,  DE LA LLERA, Anthony ,  HOLLAND, John P. ,  PAENG, Dong Woo

IPC: H01J37/32 ,  H05H1/00

Abstract: Methods, systems, apparatuses, and computer programs are presented for controlling plasma discharge uniformity using magnetic fields. A substrate processing apparatus includes a vacuum chamber with a processing zone for processing a substrate. The apparatus further includes a magnetic field sensor to detect a first signal representing an axial magnetic field and a second signal representing a radial magnetic field associated with the vacuum chamber. The apparatus includes at least two magnetic field sources to generate an axial supplemental magnetic field and a radial supplemental magnetic field through the processing zone of the vacuum chamber. The apparatus includes a magnetic field controller coupled to the magnetic field sensor and the at least two magnetic field sources. The magnetic field controller adjusts at least one characteristic of one or more of the axial supplemental magnetic field and the radial supplemental magnetic field based on the first signal and the second signal.

公开(公告)号：WO2021021578A1

公开(公告)日：2021-02-04

申请号：PCT/US2020/043318

申请日：2020-07-23

Applicant: LAM RESEARCH CORPORATION

Inventor： GREGOR, Mariusch ,  PANAGOPOULOS, Theodoros ,  LILL, Thorsten Bernd

IPC: B81B1/00 ,  F16K7/12 ,  F16K27/02

Abstract: An apparatus may be provided that includes a substrate having one or more microfluidic valve structures. The valve structures are non-elastomeric, non-polymeric, non-metallic membrane valves for use in high-vacuum application. Such valves are functional even when the fluid-control side of the valve is exposed to a sub-atmospheric pressure field which may generally act to collapse/seal traditional elastomeric membrane valve.

公开(公告)号：WO2019032252A1

公开(公告)日：2019-02-14

申请号：PCT/US2018/042635

申请日：2018-07-18

Applicant: LAM RESEARCH CORPORATION

Inventor： PANAGOPOULOS, Theodoros ,  GOULD, Richard ,  REYES, Edmundo ,  BONIFACE, John ,  BERRY, Ivan ,  DULKIN, Alexander ,  VAN SCHRAVENDIJK, Bart

IPC: H01L21/677 ,  H01L21/67

Abstract: An apparatus for transporting or storing at least one semiconductor wafer in an ultra-high vacuum is provided. A portable vacuum transfer pod is provided comprising an internal wafer storage chamber for storing one or more wafers and a wafer support for supporting at least one wafer within the internal wafer storage chamber. A passively capable vacuum pump capable of passive vacuum pumping is in fluid connection with the internal wafer storage chamber and is mechanically connected to the portable vacuum transfer pod. A shut off valve for opening and closing the fluid connection is between the passively capable vacuum pump and the internal wafer storage chamber.