公开(公告)号：WO2019112849A1

公开(公告)日：2019-06-13

申请号：PCT/US2018/062765

申请日：2018-11-28

Applicant: LAM RESEARCH CORPORATION

Inventor： LONG, Maolin ,  WANG, Yuhou ,  WU, Ying ,  PATERSON, Alex

IPC: H03K3/57 ,  H01J37/32 ,  H03K5/02

Abstract: A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on- off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

公开(公告)号：WO2019099379A1

公开(公告)日：2019-05-23

申请号：PCT/US2018/060754

申请日：2018-11-13

Applicant: LAM RESEARCH CORPORATION

Inventor： WU, Ying ,  PATERSON, Alex ,  DREWERY, John ,  SATO, Arthur

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32963 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/68757 ,  H03H11/28

Abstract: Systems and methods for applying frequency and match tuning in a non-overlapping manner are described. For example, a radio frequency (RF) generator is tuned for a time interval and an impedance match is not tuned for the time interval. The impedance match is tuned before or after the RF generator is tuned. Such a non-overlap in the tuning of the RF generator and the impedance match facilitates a reduction in reflected power during a pulse without the tuning of the RF generator interfering with the tuning of the impedance match.

公开(公告)号：WO2019027672A1

公开(公告)日：2019-02-07

申请号：PCT/US2018/042560

申请日：2018-07-17

Applicant: LAM RESEARCH CORPORATION

Inventor： ZHOU, Xiang ,  KAMP, Tom, A. ,  KIMURA, Yoshie ,  ZHANG, Duming ,  XU, Chen ,  DREWERY, John ,  PATERSON, Alex

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H05H1/46 ,  C23C16/02

Abstract: A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described.

公开(公告)号：WO2019070673A1

公开(公告)日：2019-04-11

申请号：PCT/US2018/053918

申请日：2018-10-02

Applicant: LAM RESEARCH CORPORATION

Inventor： PATERSON, Alex ,  LONG, Maolin

IPC: H01F30/00 ,  H01F19/08 ,  H01F27/28 ,  H03H7/01 ,  H01J37/32 ,  H01B5/08

Abstract: A radiofrequency (RF) filter includes an inductive element having multiple coil sections collectively forming an undivided coil of a cable of twisted magnetic wires. At least two adjacent coil sections have different turn pitches. The cable of twisted magnetic wires includes two wires per channel and is configured for at least one channel. The cable of twisted magnetic wires at a first end of the inductive element is configured for connection to an electrical component that is to receive power from a power supply. The cable of twisted magnetic wires at a second end of the inductive element is configured for connection to the power supply. Terminating capacitive elements are electrically connected between a reference ground potential and a respective wire of the cable of twisted magnetic wires at respective locations between the second end of the inductive element and the power supply.

公开(公告)号：WO2018136121A1

公开(公告)日：2018-07-26

申请号：PCT/US2017/057728

申请日：2017-10-20

Applicant: LAM RESEARCH CORPORATION

Inventor： TAN, Zhongkui ,  ZHANG, Yiting ,  FU, Qian ,  XU, Qing ,  WU, Ying ,  SRIRAMAN, Saravanapriyan ,  PATERSON, Alex

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/46 ,  H01L21/67

Abstract: A substrate is positioned on a substrate support structure within a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode within the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequency signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate.

公开(公告)号：WO2013151812A1

公开(公告)日：2013-10-10

申请号：PCT/US2013/033609

申请日：2013-03-22

Applicant: LAM RESEARCH CORPORATION

Inventor： PANAGOPOULOS, Theodoros ,  HOLLAND, John ,  PATERSON, Alex

IPC: C23C16/455

CPC classification number: H01J37/321 ,  H01J37/3211

Abstract: Methods and apparatus for controlling plasma in a plasma, processing system having at least an inductively coupled plasma (ICP) processing chamber are disclosed. The ICP chamber employs at least a first/center RF coil, a second/edge RF coii disposed concentrically with respect to the firsi/center RF coil, and a RF coil set having at least a third/mid. RF coil disposed concentrically with respect to the first/center RF coil and the second/edge RF coii in a manner such that the third/mid RF coil is disposed in between the first/center RF coil and the second/edge RF coil. During processing, RF currents in the same direction are provided to the first/center RF coil and the second/edge RF coil while RF current in the reverse direction (reiative to the direction of the currents provided to the first/center RF coil and the second'edge RF coil) is provided to the third/mid RF coil.

Abstract translation: 公开了一种用于控制等离子体中的等离子体的方法和装置，具有至少一个电感耦合等离子体（ICP）处理室的处理系统。 ICP室采用至少第一/中心RF线圈，相对于冷杉/中心RF线圈同心设置的第二/边缘RF组件，以及具有至少三分之一/中间的RF线圈组。 RF线圈相对于第一/中心RF线圈和第二/边缘RF组件以与第一/中心RF线圈和第二/边缘RF线圈之间的第三/中间RF线圈布置的方式同心地布置。 在处理期间，向第一/中心RF线圈和第二/边缘RF线圈提供相同方向的RF电流，而反向的RF电流（反向提供给第一/中心RF线圈的电流的方向和 第二'RF射频线圈）提供给第三/中间RF线圈。

公开(公告)号：WO2019046093A1

公开(公告)日：2019-03-07

申请号：PCT/US2018/047710

申请日：2018-08-23

Applicant: LAM RESEARCH CORPORATION

Inventor： SHOEB, Juline ,  WU, Ying ,  PATERSON, Alex

IPC: H01J37/32

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

公开(公告)号：WO2018226468A1

公开(公告)日：2018-12-13

申请号：PCT/US2018/035026

申请日：2018-05-30

Applicant: LAM RESEARCH CORPORATION

Inventor： LONG, Maolin ,  PATERSON, Alex

IPC: H01J37/32

Abstract: A substrate processing system includes a processing chamber including a substrate support to support a substrate. A coil is arranged around the processing chamber. A first RF source provides first RF power at a first magnitude and a first frequency. A first pulsing circuit applies a duty cycle to the first RF source. A tuning circuit receives an output of the first pulsing circuit, includes a first variable capacitor, and has an output in communication with the coil to generate plasma in the processing chamber. A controller includes a data acquisition module to generate feedback. A feedback control module controls at least one of the first frequency and the first variable capacitor based on the feedback and a gain value. The controller selects the gain value based on at least one of the first frequency and the duty cycle.

公开(公告)号：WO2012173769A2

公开(公告)日：2012-12-20

申请号：PCT/US2012/039752

申请日：2012-05-25

Applicant: LAM RESEARCH CORPORATION ,  LONG, Maolin ,  PATERSON, Alex ,  MARSH, Richard ,  WU, Ying

Inventor： LONG, Maolin ,  PATERSON, Alex ,  MARSH, Richard ,  WU, Ying

IPC: H01L21/3065 ,  C23F1/08

CPC classification number: H01J37/32651 ,  H01J37/321 ,  H01J37/32697 ,  H01L21/6831

Abstract: A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

Abstract translation: 提供等离子体处理室和操作室的方法。 示例性室包括用于接收基板的静电卡盘和连接到腔室顶部的电介质窗口。 电介质窗口的内侧面对位于静电卡盘上方的等离子体处理区域，并且电介质窗口的外侧在等离子体处理区域的外部。 内部和外部线圈设置在电介质窗口的外侧上方，内部和外部线圈连接到第一RF电源。 电力网格设置在电介质窗口的外侧和内部和外部线圈之间。 电网连接到独立于第一RF电源的第二RF电源。

公开(公告)号：WO2012166364A1

公开(公告)日：2012-12-06

申请号：PCT/US2012/038091

申请日：2012-05-16

Applicant: LAM RESEARCH CORPORATION ,  KANG, Michael ,  PATERSON, Alex ,  KENWORTHY, Ian, J.

Inventor： KANG, Michael ,  PATERSON, Alex ,  KENWORTHY, Ian, J.

IPC: C23C16/00

CPC classification number: H01L21/30604 ,  B05B1/185 ,  B05D1/62 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/505 ,  C23C16/507 ,  H01J37/3211 ,  H01J37/3244 ,  H01J2237/3341 ,  H01L21/30655 ,  H01L21/67069

Abstract: This invention discloses a ceramic showerhead for an inductively coupled plasma processing apparatus which includes a processing chamber in which a semiconductor substrate is processed, a substrate support on which the semiconductor substrate is supported during processing thereof, and an antenna operable to generate and maintain a plasma in the processing chamber. The ceramic showerhead forms a dielectric window of the chamber and a gas delivery system is operable to alternately supply an etching gas and a deposition gas to a plenum in the showerhead and replace the etching gas in the plenum with the deposition gas within 200 milliseconds

Abstract translation: 本发明公开了一种用于电感耦合等离子体处理装置的陶瓷喷头，其包括处理半导体基板的处理室，在其处理期间支撑半导体基板的基板支撑件以及可操作以产生和维持等离子体的天线 在处理室中。 陶瓷喷头形成腔室的电介质窗口，气体输送系统可操作以将蚀刻气体和沉积气体交替地供应到喷淋头中的增压室，并将沉积气体中的蚀刻气体置换在200毫秒内