METHODS AND SYSTEMS FOR CONTROLLING RADIOFREQUENCY PULSE-INITIATION POWER SPIKE FOR PLASMA SHEATH STABILIZATION

    公开(公告)号:WO2021207002A1

    公开(公告)日:2021-10-14

    申请号:PCT/US2021/025424

    申请日:2021-04-01

    Abstract: Multiple, sequential pulses of radiofrequency power are supplied to an electrode of a plasma processing chamber to control a plasma within the plasma processing chamber. Each of the pulses of radiofrequency power includes a first duration over which a first radiofrequency power profile exists, immediately followed by a second duration over which a second radiofrequency power profile exists. The first radiofrequency power profile has greater radiofrequency power than the second radiofrequency power profile. The first duration is less than the second duration. And, the sequential pulses of radiofrequency power are separated from each other by a third duration. A radiofrequency signal generation system is provided to generate and control the multiple, sequential pulses of radiofrequency power.

    JUNCTION SYSTEM FOR DIRECT-DRIVE RADIOFREQUENCY POWER SUPPLY

    公开(公告)号:WO2023043748A1

    公开(公告)日:2023-03-23

    申请号:PCT/US2022/043387

    申请日:2022-09-13

    Abstract: A junction system for a direct-drive radiofrequency power supply includes a first terminal connected to a radiofrequency signal supply pin that is connected to an output of a direct-drive radiofrequency signal generator. The junction system also includes a second terminal connected to a coil of a plasma processing chamber. The junction system includes a reactive circuit connected between the first terminal and the second terminal. The reactive circuit is configured to transform a shaped-amplified square waveform signal into a shaped-sinusoidal signal in route from the first terminal to the second terminal. The reactive circuit includes a variable capacitor having a capacitance set so that a peak amount of radiofrequency power is transmitted from the direct-drive radiofrequency signal generator through the reactive circuit to the coil.

    AUXILIARY CIRCUIT IN RF MATCHING NETWORK FOR FREQUENCY TUNING ASSISTED DUAL-LEVEL PULSING

    公开(公告)号:WO2018187292A1

    公开(公告)日:2018-10-11

    申请号:PCT/US2018/025838

    申请日:2018-04-03

    Abstract: A radio frequency (RF) matching circuit control system includes an RF matching circuit including a plurality of tunable components. The RF matching circuit is configured to receive an input signal including at least two pulsing levels from an RF generator, provide an output signal to a load based on the input signal, and match an impedance associated with the input signal to impedances of the load. A controller is configured to determine respective impedances of the load for the at least two pulsing levels of the input signal and adjust operating parameters of the plurality of tunable components to align a frequency tuning range of the RF matching circuit with the respective impedances of the load for the at least two pulsing levels to match the impedance associated with the input signal to the respective impedances.

    A METHOD AND APPARATUS FOR ENHANCING ION ENERGY AND REDUCING ION ENERGY SPREAD IN AN INDUCTIVELY COUPLED PLASMA

    公开(公告)号:WO2023059990A1

    公开(公告)日:2023-04-13

    申请号:PCT/US2022/076866

    申请日:2022-09-22

    Abstract: A method for operating a plasma chamber to increase ion energy and decrease angular spread of ions during an etch operation is described. Method includes placing a substrate on an electrostatic chuck within the plasma chamber, wherein the electrostatic chuck is electrically coupled to a node. Method further includes forming a plasma in the plasma chamber, where the plasma produces a sheath with a first sheath voltage. The method further includes increasing the first sheath voltage to a second sheath voltage by applying a non-sinusoidal voltage at the electrostatic chuck and by applying a sinusoidal voltage at the electrostatic chuck, where a sum of the non-sinusoidal voltage and the sinusoidal voltage creates a voltage response on the electrostatic chuck that effectuates a change in a spread in ion energy at the wafer.

    SUBSTRATE LOCATION DETECTION AND ADJUSTMENT
    7.
    发明申请

    公开(公告)号:WO2020163644A1

    公开(公告)日:2020-08-13

    申请号:PCT/US2020/017080

    申请日:2020-02-06

    Abstract: Systems and methods are provided for positioning a wafer in relation to a datum structure. In one example, a system comprises a camera arrangement including at least two cameras, each of the at least two cameras including a field of view when positioned in the camera arrangement, each field of view including a peripheral edge of the wafer and a peripheral edge of the datum structure. A processor receives positional data from each of the at least two cameras and determines, in relation to each field of view, a gap size between the respective peripheral edges of the wafer and the datum location included in the respective field of view. A controller adjusts a position of the wafer relative to the datum structure based on the determined respective gap sizes.

    IMAGE BASED PLASMA SHEATH PROFILE DETECTION ON PLASMA PROCESSING TOOLS

    公开(公告)号:WO2019231814A1

    公开(公告)日:2019-12-05

    申请号:PCT/US2019/033693

    申请日:2019-05-23

    Abstract: A system includes an image processing module configured to receive an image, captured by an imaging device, of a plasma environment within a substrate processing chamber during processing of a substrate and extract one or more features of the image indicative of a plasma sheath formed within the plasma environment during the processing of the substrate. A control module is configured to determine a plasma sheath profile based on the one or more features extracted from the image and selectively adjust at least one processing parameter related to the processing of the substrate based on the plasma sheath profile.

    SYSTEMS FOR CONTROLLING PLASMA DENSITY DISTRIBUTION PROFILES INCLUDING MULTI-RF ZONED SUBSTRATE SUPPORTS

    公开(公告)号:WO2022081535A1

    公开(公告)日:2022-04-21

    申请号:PCT/US2021/054514

    申请日:2021-10-12

    Abstract: A substrate processing system includes a substrate support, N RF sources and a controller. The substrate support is arranged in a processing chamber, supports a substrate on an upper surface thereof, and includes: a baseplate made of electrically conductive material and M electrodes disposed in the baseplate. Each of the N RF sources supplies a respective RF signal to one or more of the M electrodes, where: M and N are integers greater than or equal to two; each of the respective RF signals is supplied to a different set of the M electrodes; and each of the sets includes a different one or more of the M electrodes. The controller causes one or more coils to strike and maintain plasma in the processing chamber independently of the N RF sources and separately controls voltage outputs of the N RF sources to adjust the plasma in the processing chamber.

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