公开(公告)号：WO2020117503A1

公开(公告)日：2020-06-11

申请号：PCT/US2019/062862

申请日：2019-11-22

Applicant: LAM RESEARCH CORPORATION

Inventor： SHOEB, Juline ,  PATERSON, Alexander, Miller ,  WU, Ying

IPC: H01J37/32 ,  H01L21/3065

Abstract: Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.

公开(公告)号：WO2020014480A1

公开(公告)日：2020-01-16

申请号：PCT/US2019/041399

申请日：2019-07-11

Applicant: LAM RESEARCH CORPORATION

Inventor： SHOEB, Juline ,  PATERSON, Alexander, Miller ,  WU, Ying

IPC: H01J37/32 ,  H01L21/3065

Abstract: Systems and methods for generating monoenergetic ions are described. A duty cycle of a high parameter level of a multistate parameter signal is maintained and a difference between the high parameter level and a low parameter level of the multistate parameter signal is maintained to generate monoenergetic ions. The monoenergetic ions are used to etch a top material layer of a substrate at a rate that is self-limiting without substantially etching a bottom material layer of the substrate.

公开(公告)号：WO2019099379A1

公开(公告)日：2019-05-23

申请号：PCT/US2018/060754

申请日：2018-11-13

Applicant: LAM RESEARCH CORPORATION

Inventor： WU, Ying ,  PATERSON, Alex ,  DREWERY, John ,  SATO, Arthur

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32963 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/68757 ,  H03H11/28

Abstract: Systems and methods for applying frequency and match tuning in a non-overlapping manner are described. For example, a radio frequency (RF) generator is tuned for a time interval and an impedance match is not tuned for the time interval. The impedance match is tuned before or after the RF generator is tuned. Such a non-overlap in the tuning of the RF generator and the impedance match facilitates a reduction in reflected power during a pulse without the tuning of the RF generator interfering with the tuning of the impedance match.

公开(公告)号：WO2020036803A1

公开(公告)日：2020-02-20

申请号：PCT/US2019/045681

申请日：2019-08-08

Applicant: LAM RESEARCH CORPORATION

Inventor： WANG, Yuhou ,  LONG, Maolin ,  WU, Ying ,  PATERSON, Alexander Miller

IPC: H01J37/32 ,  H03H7/40 ,  H02M3/337

Abstract: A drive circuit for providing RF power to a component of a substrate processing system includes a plasma source operating at a first frequency. A load includes the component of the substrate processing system. An impedance network connects the plasma source to the load. A current sensor senses current at an output of the plasma source. A voltage sensor senses voltage at the output of the plasma source. A controller includes a tuned frequency calculator configured to calculate a tuned frequency for the plasma source based on the voltage, the current, and a configuration of the impedance network and to adjust the first frequency based on the tuned frequency.

公开(公告)号：WO2018136121A1

公开(公告)日：2018-07-26

申请号：PCT/US2017/057728

申请日：2017-10-20

Applicant: LAM RESEARCH CORPORATION

Inventor： TAN, Zhongkui ,  ZHANG, Yiting ,  FU, Qian ,  XU, Qing ,  WU, Ying ,  SRIRAMAN, Saravanapriyan ,  PATERSON, Alex

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/46 ,  H01L21/67

Abstract: A substrate is positioned on a substrate support structure within a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode within the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequency signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate.

公开(公告)号：WO2019182890A1

公开(公告)日：2019-09-26

申请号：PCT/US2019/022455

申请日：2019-03-15

Applicant: LAM RESEARCH CORPORATION

Inventor： SHOEB, Juline ,  PATERSON, Alex ,  WU, Ying

IPC: H01J37/32

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The RF signal is applied to a substrate support via a match. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. In addition, a direct current (DC) parameter is applied to the substrate support or another RF signal is applied to an upper electrode. The parameter and the frequency of the RF signal applied to the substrate support are simultaneously pulsed with the DC parameter or the RF signal applied to the upper electrode to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

公开(公告)号：WO2019182847A1

公开(公告)日：2019-09-26

申请号：PCT/US2019/022191

申请日：2019-03-14

Applicant: LAM RESEARCH CORPORATION

Inventor： SHOEB, Juline ,  PATERSON, Alex ,  WU, Ying

IPC: H01J37/32

Abstract: Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.

公开(公告)号：WO2018187292A1

公开(公告)日：2018-10-11

申请号：PCT/US2018/025838

申请日：2018-04-03

Applicant: LAM RESEARCH CORPORATION

Inventor： WANG, Yuhou ,  SATO, Arthur H. ,  WU, Ying ,  PATERSON, Alexander Miller

IPC: H01J37/32

Abstract: A radio frequency (RF) matching circuit control system includes an RF matching circuit including a plurality of tunable components. The RF matching circuit is configured to receive an input signal including at least two pulsing levels from an RF generator, provide an output signal to a load based on the input signal, and match an impedance associated with the input signal to impedances of the load. A controller is configured to determine respective impedances of the load for the at least two pulsing levels of the input signal and adjust operating parameters of the plurality of tunable components to align a frequency tuning range of the RF matching circuit with the respective impedances of the load for the at least two pulsing levels to match the impedance associated with the input signal to the respective impedances.

公开(公告)号：WO2019112849A1

公开(公告)日：2019-06-13

申请号：PCT/US2018/062765

申请日：2018-11-28

Applicant: LAM RESEARCH CORPORATION

Inventor： LONG, Maolin ,  WANG, Yuhou ,  WU, Ying ,  PATERSON, Alex

IPC: H03K3/57 ,  H01J37/32 ,  H03K5/02

Abstract: A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on- off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

公开(公告)号：WO2023038838A1

公开(公告)日：2023-03-16

申请号：PCT/US2022/042271

申请日：2022-08-31

Applicant: LAM RESEARCH CORPORATION

Inventor： WANG, Yuhou ,  PATERSON, Alexander, Miller ,  DREWERY, John, Stephen ,  WU, Ying

IPC: H01J37/32 ,  H03H7/38

Abstract: A plasma system includes a first matchless plasma source (MPS) that generates a first sinusoidal waveform having a first frequency. The plasma system includes a first filter coupled to the first MPS to filter a second frequency. The plasma system further includes a first capacitive circuit coupled to the first filter to balance reactances of the first filter and a radio frequency (RF) coil to further provide a first RF signal to a point. The plasma system includes a second MPS that generates a second sinusoidal waveform having the second frequency. The plasma system includes a second filter coupled to the second MPS to filter the first frequency. The plasma system includes a second capacitive circuit that is coupled to the second filter to balance a reactance of the second filter with the reactance of the RF coil to further provide a second RF signal to the point.