公开(公告)号：WO2018089534A1

公开(公告)日：2018-05-17

申请号：PCT/US2017/060692

申请日：2017-11-08

Applicant: LAM RESEARCH CORPORATION

Inventor： BALDASSERONI, Chloe ,  SWAMINATHAN, Shankar

IPC: H01L21/027 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02348 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods and apparatuses for forming high modulus silicon oxide spacers using atomic layer deposition are provided. Methods involve depositing at high temperature, using high plasma energy, and post-treating deposited silicon oxide using ultraviolet radiation. Such silicon oxide spacers are suitable for use as masks in multiple patterning applications to prevent pitch walking.

Abstract translation: 提供了使用原子层沉积形成高模量氧化硅隔离物的方法和装置。 方法涉及使用高等离子体能量在高温下沉积，并使用紫外线辐射对沉积的氧化硅进行后处理。 这种氧化硅隔离物适合在多种图案化应用中用作掩模，以防止俯仰行走。

公开(公告)号：WO2018064189A1

公开(公告)日：2018-04-05

申请号：PCT/US2017/053764

申请日：2017-09-27

Applicant: LAM RESEARCH CORPORATION

Inventor： REDDY, Kapu Sirish ,  SHANKAR, Nagraj ,  SWAMINATHAN, Shankar ,  RAINVILLE, Meliha Gozde ,  PASQUALE, Frank L.

IPC: H01L21/768 ,  H01L21/02

Abstract: Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm 3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The composite films in one embodiment include at least two elements selected from the group consisting of Al, Si, and Ge, and at least one element selected from the group consisting of O, N, and C. In one embodiment the composite film includes Al, Si and O. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) and, sequentially, with a silicon-containing compound. Adsorbed compounds are then treated with an oxygen-containing plasma (e.g., plasma formed in a CO 2 -containig gas) to form a film that contains Al, Si, and O.

Abstract translation: 以介电常数（k）小于约7并具有至少约2.5g / cm 3的密度为特征的介电复合膜被沉积在部分制造的半导体 器件用作蚀刻停止层。 一个实施方式中的复合膜包括从由Al，Si和Ge组成的组中选择的至少两种元素以及从由O，N和C组成的组中选择的至少一种元素。在一个实施方式中，复合膜包括Al ，Si和O.在一个实施方式中，将包含暴露的电介质层（例如ULK电介质）和暴露的金属层的衬底与含铝化合物（例如三甲基铝）接触，并且顺序地与含硅 复合。 然后用含氧的等离子体（例如，在CO 2 - 含气体中形成的等离子体）处理吸附的化合物以形成含有Al，Si和O的膜。