摘要:
A split load circuit (44) for driving a high speed load (72) and a low speed load (74) to the same logic state in response to one or more input signals. One input signal is provided to the gate terminals of pull-down transistors (48, 50, 52). The inverse of the input signal is provided to the gate terminals of pull-up transistors (64, 66). The high speed load (72) is connected between the pull-up transistor (64) and the pull-down transistor (50) and the low speed load (74) is connected between the pull-up transistor (66) and the pull-down transistor (52). When the input signal at the input node (46) is driven from one voltage state to another, the loads (72, 74) will be driven at different rates depending upon the capacitance and impedance of the load and the sizes of the pull-up transistors (64, 66) and the pull-down transistors (50, 52). The loads (72, 74) are driven independently such that much smaller pull-up and pull-down transistors can be utilized in place of a single pull-up and single pull-down transistor which would need to be fabricated much larger in order to meet the speed requirement of the high speed load (72) and to charge the high capacitance of the low speed load (74). Further, the power consumption is substantially reduced due to the reduced area of the transistors.
摘要:
Test circuit (10) for a semiconductor memory. The semiconductor memory includes a redundant decoder (70) for receiving memory address signals (66, 68) which is connected to a redundant circuit element via a signal line (72). The redundant decoder (70) can be programmed in accordance with the address of a defective circuit element, such that when the decoder (70) is addressed by the memory address signals (66, 68) the decoder (70) selects a predetermined redundant circuit element. The test circuit (10) generates an output signal (14) indicating that the circuit element selected by the decoder (70) is a redundant circuit element. The output signal (14) is applied to an indicator circuit (16) which is enabled in a test mode by an abnormal condition detector (26). The output (18) of indicator circuit (16) is applied to an external pin (20).
摘要:
A margin test circuit (10) is provided for a semiconductor memory circuit having a plurality of memory cells (16). Each of the memory cells (16) in one row of cells (16) are interconnected to a word line (14). The margin test circuit (10) further includes a row decoder/driver (12) which receives a variable voltage (V u *) for changing the signal level stored within a memory cell (16) to thereby determine the marginal voltage level at which the memory cell (16) will maintain storage of a signal level. The variable voltage (V u *) is the semiconductor memory circuit main supply source (V u) in normal operation but can be forced to a different voltage during the margin test.
摘要翻译:为具有多个存储单元(16)的半导体存储器电路提供了裕量测试电路(10)。 一行单元(16)中的每个存储单元(16)互连到字线(14)。 边缘检验电路(10)还包括行解码器/驱动器(12),其接收用于改变存储在存储单元(16)内的信号电平的可变电压(V uC> u *),从而确定边际电压电平 存储单元(16)将保持信号电平的存储。 可变电压(V ucc> u *)是正常操作中的半导体存储器电路主电源(V ucc> u),但是在裕量测试期间可以被强制为不同的电压。
摘要:
A differential amplifier (24, 26, 10 and 12) having a feedback network (30, 34, 32, 36 and 38) for increasing common output without loss of gain. Also disclosed is a constant current source (60), and a level shifting network (48, 50, 52 and 54) for shifting the D.C. level of the output signal to a D.C. voltage substantially near that of second current source (44). An output stage (84, 86, 90, 92 and 94) provides low output impedance, low D.C. bias power consumption and high current drive capability.
摘要:
A dynamic random access memory (10) receives a memory address of a row decoder (14) which charges a selected row line (18). When the row line (18) is charged an access transistor (24) in a memory cell (22) is rendered conductive to connect a storage capacitor (26) to a bit line (30). The bit lines (30, 38) are previously set at an equilibration voltage. The voltage on the bit line (30) is driven slightly above the equilibration voltage if a high voltage state had been stored in the capacitor (26) or the voltage on the bit line is driven slightly below the equilibration voltage if a low voltage state had been stored on the capacitor (26). A sense amplifier (44) is connected to the bit lines (30, 38) and upon receipt of a latch signal (L) drives the one of the bit lines (30, 38) having the lower voltage to a low voltage state. A pullup circuit (60) drives the voltage on the remaining bit line of the pair to a high voltage state, restoring the memory storage capacitor (26) to its initial state. After the row line (18) is now discharged trapping the original data state in the storage capacitor (26), precharge transistors (50, 52) then connect together the bit lines (30, 38) through a latch node (46) to share charge between the bit lines (30, 38) and drive the bit lines (30, 38) to the equilibration voltage.
摘要:
A semiconductor dynamic memory circuit (10) includes a memory cell array (38) which includes a plurality of memory cells which are accessed through row and column lines by operation of row and column clock chain signals. A strap (68) is provided to operate the circuit (10) as either a memory which is refreshed according to internally generated addresses or a memory which is refreshed in response to externally supplied memory addresses and is easily incorporated into a memory system which utilizes error detection and correction during the refresh operation. In the absence of the strap (68) a refresh signal (20) refreshes cells of the array (38) in response to the address generated by an internal address counter (82). The circuit (10) accesses a given memory location when an externally supplied address is provided together with a RAS signal (12) and a CAS signal (16). When the strap (68) is incorporated into the circuit (10) the refresh signal (20) applied thereto causes the memory cell array (38) to be refreshed at the externally supplied address. The data within the memory cell array (38) is accessed in response to an externally supplied memory address, the RAS signal (12) and the CAS signal (16). The CAS signal (16) is inhibited in the absence of the RAS signal (12). The circuit (10) is used within a memory array (102) for reading out stored data together with error correcting bits while at the same time refreshing all of the memory circuits in the memory (102). An error detecting and correcting circuit (160) is provided to evaluate the data read out from the memory circuits and to provide a corrected data pattern when erroneous bits are detected.
摘要:
In-line data compression system (10) which reduces the number of binary bits required to transmit a given text or similar message over a data network such a Telex or TWX. The unit (14) further provides an option for encrypting the compressed message. The unit (14) connected in-line between the local keyboard/printer terminal (12) and the network interface unit (16). The compression unit (14) can transmit or receive standard messages or can transmit compressed and encrypted messages to remote stations, and can receive, decrypt, and decompress messages from remote stations. The text data is compressed by identifying each word, searching for the word in a fixed library of words (38), and transmitting a first escape code plus the library address if the word is found. If the word is not found in the fixed library, a search is made for the word in a reconfiguration library (40) and a second escape code plus the reconfiguration library address is transmitted if the word is found. If the word is not found in the reconfiguration library, the word is transmitted one character at a time using variable length character codes produced by a "Huffman" type code generator. An identical unit (14) interposed at the receiving terminal but operating in the receiving mode can decrypt the message, then detect the escape codes and fetch words expressed in standard character codes from an identical fixed library (38) or an identically compiled reconfiguration library (40), or finally decodes the variable length character codes. The reconfiguration library is compiled by placing each word which is not in the library in the reconfiguration library before it is transmitted by variable length code. Then the second and each subsequent time that the same word is found in the message, the second escape code plus the address in the reconfiguration library will be transmitted in lieu of the Huffman coded characters of the word. The receiving station follows the same procedure on received messages to compile an identical reconfiguration library from which words previously in the messages can be outputted in response to a transmitted reconfiguration library escape code and address. The system is also applicable to compression of other types of data, serial or parallel, such as digital color television, for example.
摘要:
A circuit for biasing the bit lines of a static semiconductor memory when each of the cells (150) within the memory is being powered by a backup power source due to failure of the primary power source. The bit lines (52) connected to the cells within the array (50) are connected to transistors (54) which bias the bit lines (52) to a high voltage upon detection of failure of the primary power for the computer. The bit lines (52) are maintained at a high voltage level to prevent discharge of a data storage node (156) through an access transistor (164) of a memory cell (150). Biasing of the bit lines (52) further prevents the integrated circuit substrate (150) from being driven excessively positive by capacitive coupling between the substrate (150) and the bit lines (52) when the primary power is restored to the circuit.
摘要:
Switched-capacitor circuit (50) for passing an audio frequency over a predetermined range of frequencies fabricated on a monolithic semiconductor substrate. The switched-capacitor filter (50) includes a first amplifier (60) and a second amplifier (90). A first integrator capacitor (66) is interconnected to the first amplifier (60). A second integrator capacitor (96) is interconnected to the first amplifier (90). A first input switched-capacitor (82) is interconnected between the first amplifier (60) and the second amplifier (90), such that the first input switched-capacitor (82) samples and holds the output of the second amplifier (90) during a first clock phase thereby isolating the output of the second amplifier (90) from the input of the first amplifier (60). During a second clock phase the first input switched-capacitor (82) applies the output of the second amplifier (90) to the first integrator capacitor (66). A second input switched-capacitor (112) is provided and is interconnected between the output of the first amplifier (60) and the input of the second amplifier (90), such that during the second clock phase the second input switched-capacitor (112) applies the output of the first amplifier (60) to the second integrator capacitor (96). The switched-capacitor circuit (50) functions such that effectively zero phase shift is introduced into the signal being processed by the switched-capacitor circuit (50).
摘要:
A power supply control circuit (20) selectively provides power to an integrated circuit from either a primary power supply terminal (22), or through terminals (24, 26) connected to backup batteries. The voltage level of the primary power is monitored continuously and when it drops to a predetermined level one of the two backup batteries is substituted to power the integrated circuit in a power-down mode. The circuit (20) includes a level detector circuit (32) and a voltage reference circuit (98). In the power-down mode one battery is connected to power the integrated circuit and this battery is continuously monitored. When the voltage of the on-line battery drops to below a fixed level in comparison to off-line battery a control logic circuit (92) activates switches (56) to substitute the off-line battery for the on-line battery. Control logic circuitry (92) is provided to disconnect the control signals from the integrated circuit to prevent loss of stored information. Further the failure of one of the backup batteries is indicated by disabling a write enable signal.