公开(公告)号：WO2011124893A3

公开(公告)日：2012-01-19

申请号：PCT/GB2011000546

申请日：2011-04-08

Applicant: NEXEON LTD ,  GREEN MINO ,  LIU FENG-MING ,  JIANG YUXIONG ,  STEVENS VALERIE ELIZABETH DAWN ,  MILLS-LAMPTEY BENJAMIN ODARKWEI

Inventor： GREEN MINO ,  LIU FENG-MING ,  JIANG YUXIONG ,  STEVENS VALERIE ELIZABETH DAWN ,  MILLS-LAMPTEY BENJAMIN ODARKWEI

IPC: H01M4/38 ,  C09K13/04 ,  C09K13/08 ,  H01M4/04

CPC classification number: C23F1/16 ,  C09K13/08 ,  H01L21/30604 ,  H01M4/0492 ,  H01M4/38

Abstract: The present invention provides a method for treating silicon to form pillars ( see Figure 2), especially for use as the active anode material in Li-ion batteries. The process is simple to operate on a commercial scale since it uses a solution containing only a small number of ingredients whose concentration needs to be controlled and it can be cheaper to operate than previous processes. The etching solution comprises: 0.01 to 5M HF 0.002 to 0.2M of metal ions capable of nucleating on and forming a porous layer comprising regions of elemental metal on the silicon surface; 0.001 to 0.7M of an oxidant selected from the group O2, O3, H2O2, the acid, ammonium or alkali metal salt of NO3 -, S2O8 2-, NO2 -, B4O7 2- and ClO4 - a mixture thereof. The treated silicon is suitably removed from the solution. Etched particles or fibres made by the process may be used in the form of a composite material in the active electrode material.

Abstract translation: 本发明提供一种处理硅以形成柱状物的方法（参见图2），特别是用作锂离子电池中的活性阳极材料。 该方法在商业规模上操作简单，因为它使用仅含少量成分的溶液，其浓度需要被控制，并且可以比以前的方法操作更便宜。 蚀刻溶液包括：0.01至5M HF 0.002至0.2M的能够在硅表面上成核并形成多孔层的金属离子，其包含元素金属区域; 0.001〜0.7M的选自O 2，O 3，H 2 O 2，NO 3 - ，S 2-8 2-，NO 2 - ，B 4 O 7 2-和ClO 4的酸，铵或碱金属盐的氧化剂 - 的混合物。 经处理的硅适当地从溶液中除去。 通过该方法制备的蚀刻颗粒或纤维可以以活性电极材料中复合材料的形式使用。

公开(公告)号：WO2013093504A3

公开(公告)日：2013-09-26

申请号：PCT/GB2012053241

申请日：2012-12-21

Applicant: NEXEON LTD

Inventor： LIU FENGMING ,  JIANG YUXIONG ,  GREEN MINO

IPC: C23C18/16 ,  C23C18/31

CPC classification number: H01M4/386 ,  B81C1/00539 ,  C23C18/1601 ,  C23C18/1639 ,  C23C18/1651 ,  C23C18/31 ,  C23C18/38 ,  C23C18/42 ,  C23F1/34 ,  C23F1/40 ,  H01M4/0404 ,  H01M4/0492 ,  H01M4/366 ,  H01M10/052

Abstract: A method of etching silicon, the method comprising the steps of: electrolessly depositing a first metal onto a silicon surface to be etched, wherein the electrolessly deposited first metal partially covers the surface of the silicon to be etched; depositing a second metal that is different from the first metal over the silicon surface and the electrolessly deposited first metal, wherein a film of the deposited second metal covers the silicon surface to be etched; removing the first metal and the second metal from regions of the film of the deposited second metal that overlie the first metal to leave the second metal partially covering the silicon surface to be etched; and etching the silicon by exposing the silicon surface to an aqueous etching composition comprising an oxidant and a source of fluoride ions.

Abstract translation: 一种蚀刻硅的方法，所述方法包括以下步骤：将第一金属无电沉积到待蚀刻的硅表面上，其中所述无电沉积的第一金属部分地覆盖待蚀刻的硅的表面; 在硅表面和无电沉积的第一金属上沉积不同于第一金属的第二金属，其中沉积的第二金属的膜覆盖待蚀刻的硅表面; 从覆盖在第一金属上的沉积的第二金属的膜的区域去除第一金属和第二金属，以使第二金属部分地覆盖待蚀刻的硅表面; 并通过将硅表面暴露于包含氧化剂和氟离子源的水性蚀刻组合物来蚀刻硅。

公开(公告)号：WO2008139157A8

公开(公告)日：2010-05-14

申请号：PCT/GB2008001604

申请日：2008-05-09

Applicant: NEXEON LTD ,  GREEN MINO

Inventor： GREEN MINO

IPC: H01M4/38

CPC classification number: H01M4/386 ,  H01M4/131 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/485 ,  H01M4/525 ,  H01M10/052 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/027 ,  H01M2004/028 ,  Y02E60/122

Abstract: An electrode and electrode assembly for example for use as an anode in a lithium-ion rechargeable cell that uses silicon or silicon-based elements of specific aspect ratio dimensions and geometry 'as its active material is provided, as well as methods for manufacturing the same. The active silicon or silicon-based material may comprise fibres, sheets, flakes, tubes or ribbons, for example.

Abstract translation: 提供了例如用作锂离子可再充电电池中的阳极的电极和电极组件，其使用具有特定纵横比尺寸和几何形状的硅或硅基元素作为其活性材料，以及其制造方法 。 活性硅或硅基材料可以包括例如纤维，片，薄片，管或带。

公开(公告)号：WO2009010758A2

公开(公告)日：2009-01-22

申请号：PCT/GB2008002452

申请日：2008-07-17

Applicant: NEXEON LTD ,  GREEN MINO

Inventor： GREEN MINO

IPC: H01M4/38 ,  H01M4/02 ,  H01M4/04 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/48 ,  H01M4/485 ,  H01M4/66 ,  H01M10/0525 ,  H01M10/36

CPC classification number: H01M4/134 ,  H01M4/0492 ,  H01M4/1395 ,  H01M4/386 ,  H01M10/52 ,  H01M2004/027 ,  Y02E60/122 ,  Y02P70/54 ,  Y10T29/49108 ,  Y10T117/102 ,  Y10T428/2982

Abstract: Pillared particles of silicon or silicon-comprising material and a method of fabricating the same. These particles may be used to create both a composite anode structure with a polymer binder, a conductive additive and a metal foil current collector, and an electrode structure. The structure of the particles overcoming the problems of charge/discharge capacity loss.

Abstract translation: 硅或含硅材料的柱状颗粒及其制造方法。 这些颗粒可用于产生具有聚合物粘合剂，导电添加剂和金属箔集电器的复合阳极结构和电极结构。 颗粒的结构克服了充放电容量损失的问题。