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    TEMPLATE ELECTRODE STRUCTURES WITH ENHANCED ADHESION CHARACTERISTICS
    2.
    发明申请
    TEMPLATE ELECTRODE STRUCTURES WITH ENHANCED ADHESION CHARACTERISTICS 审中-公开
    具有增强粘附特性的模板电极结构

    公开(公告)号：WO2013006583A2

    公开(公告)日：2013-01-10

    申请号：PCT/US2012045313

    申请日：2012-07-02

    Applicant: AMPRIUS INC ,  LOVENESS GHYRN E ,  HAN SONG ,  LIU ZUQIN

    Inventor： LOVENESS GHYRN E ,  HAN SONG ,  LIU ZUQIN

    CPC classification number: H01M4/13 ,  H01M4/0492 ,  H01M4/139 ,  H01M4/366 ,  H01M4/624 ,  H01M4/628 ,  H01M4/665 ,  H01M4/70

    Abstract: Provided herein are novel template electrode materials and structures for lithium ion cells. Related methods are also provided. According to various embodiments, an electrode can include a nanostructured template, an electrochemically active material layer coating the template, and a first intermediate layer between the nanostructured template and the electrochemically active material layer. In one arrangement, the nanostructured template includes silicide nanowires. The electrochemically active material may be any of silicon, tin, germanium, carbon, metal hydrides, silicides, phosphides, and nitrides. The first intermediate layer may facilitate adhesion between the nanostructured template and the electrochemically active material layer, electronic conductivity within the electrode, and/or stress relaxation between the nanostructured template and the electrochemically active material layer.

    Abstract translation: 本文提供了用于锂离子电池的新型模板电极材料和结构。 还提供了相关的方法。 根据各种实施例，电极可以包括纳米结构模板，涂覆模板的电化学活性材料层以及纳米结构模板和电化学活性材料层之间的第一中间层。 在一种布置中，纳米结构模板包括硅化物纳米线。 电化学活性材料可以是硅，锡，锗，碳，金属氢化物，硅化物，磷化物和氮化物中的任何一种。 第一中间层可促进纳米结构模板与电化学活性材料层之间的粘附，电极内的电子传导性和/或纳米结构模板与电化学活性材料层之间的应力松弛。

    A METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR A SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES
    3.
    发明申请
    A METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR A SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES 审中-公开
    制备由硅或基于硅的材料组成的结构化颗粒的方法及其在锂可充电电池中的使用方法

    公开(公告)号：WO2011124893A3

    公开(公告)日：2012-01-19

    申请号：PCT/GB2011000546

    申请日：2011-04-08

    Applicant: NEXEON LTD ,  GREEN MINO ,  LIU FENG-MING ,  JIANG YUXIONG ,  STEVENS VALERIE ELIZABETH DAWN ,  MILLS-LAMPTEY BENJAMIN ODARKWEI

    Inventor： GREEN MINO ,  LIU FENG-MING ,  JIANG YUXIONG ,  STEVENS VALERIE ELIZABETH DAWN ,  MILLS-LAMPTEY BENJAMIN ODARKWEI

    IPC: H01M4/38 ,  C09K13/04 ,  C09K13/08 ,  H01M4/04

    CPC classification number: C23F1/16 ,  C09K13/08 ,  H01L21/30604 ,  H01M4/0492 ,  H01M4/38

    Abstract: The present invention provides a method for treating silicon to form pillars ( see Figure 2), especially for use as the active anode material in Li-ion batteries. The process is simple to operate on a commercial scale since it uses a solution containing only a small number of ingredients whose concentration needs to be controlled and it can be cheaper to operate than previous processes. The etching solution comprises: 0.01 to 5M HF 0.002 to 0.2M of metal ions capable of nucleating on and forming a porous layer comprising regions of elemental metal on the silicon surface; 0.001 to 0.7M of an oxidant selected from the group O2, O3, H2O2, the acid, ammonium or alkali metal salt of NO3 -, S2O8 2-, NO2 -, B4O7 2- and ClO4 - a mixture thereof. The treated silicon is suitably removed from the solution. Etched particles or fibres made by the process may be used in the form of a composite material in the active electrode material.

    Abstract translation: 本发明提供一种处理硅以形成柱状物的方法（参见图2），特别是用作锂离子电池中的活性阳极材料。 该方法在商业规模上操作简单，因为它使用仅含少量成分的溶液，其浓度需要被控制，并且可以比以前的方法操作更便宜。 蚀刻溶液包括：0.01至5M HF 0.002至0.2M的能够在硅表面上成核并形成多孔层的金属离子，其包含元素金属区域; 0.001〜0.7M的选自O 2，O 3，H 2 O 2，NO 3 - ，S 2-8 2-，NO 2 - ，B 4 O 7 2-和ClO 4的酸，铵或碱金属盐的氧化剂 - 的混合物。 经处理的硅适当地从溶液中除去。 通过该方法制备的蚀刻颗粒或纤维可以以活性电极材料中复合材料的形式使用。

    PROCESS FOR THE PREPARATION OF POROUS METAL
    6.
    发明申请
    PROCESS FOR THE PREPARATION OF POROUS METAL 审中-公开
    制备多孔金属的方法

    公开(公告)号：WO1990000208A1

    公开(公告)日：1990-01-11

    申请号：PCT/GB1989000730

    申请日：1989-06-29

    Applicant: THE CITY UNIVERSITY ,  UNIVERSITY OF ESSEX ,  TSEUNG, Alfred, Chan, Chung ,  CHEN, Yan, Zhen ,  JIANG, San, Ping ,  YOU, Jin, Kua

    Inventor： THE CITY UNIVERSITY ,  UNIVERSITY OF ESSEX

    IPC: C25D05/16

    CPC classification number: H01M4/8853 ,  C25D5/16 ,  H01M4/0438 ,  H01M4/0442 ,  H01M4/0452 ,  H01M4/0454 ,  H01M4/0492 ,  H01M4/29 ,  H01M4/38 ,  H01M4/50 ,  H01M4/52 ,  H01M4/54 ,  H01M4/74

    Abstract: In a process of producing a porous layer of electrolytically depositable metal a support material (1) is immersed in an electrolytic medium (2) comprising ions of the metal and the metal is electrolytically deposited onto the support material (1) in the presence of an oxidising species which reacts with the metal to form a product which is reducible under the deposition conditions. In one form of process, a metal is deposited onto a support material (1) from an aqueous medium comprising ions of the metal, oxygen being introduced into the medium to pass in the vicinity of the support material. The process enables highly porous metal to be manufactured. The porous metal obtained is useful as catalytic material or as electrode material.

    Abstract translation: 在制造可电解沉积金属的多孔层的工艺中，将支撑材料（1）浸入包含金属离子的电解介质（2）中，并且在存在金属的情况下电解沉积到载体材料（1）上 与金属反应形成可在沉积条件下还原的产物的氧化物质。 在一种形式的方法中，金属从包含金属离子的水性介质沉积在载体材料（1）上，氧被引入介质中以通过载体材料附近。 该方法可以制造高度多孔的金属。 获得的多孔金属可用作催化材料或电极材料。

    RECHARGEABLE ELECTROCHEMICAL DEVICE
    7.
    发明申请
    RECHARGEABLE ELECTROCHEMICAL DEVICE 审中-公开
    可充电电化学设备

    公开(公告)号：WO1985004988A1

    公开(公告)日：1985-11-07

    申请号：PCT/JP1985000197

    申请日：1985-04-15

    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. ,  KOSHIBA, Nobuharu ,  MOMOSE, Keigo ,  HAYAKAWA, Hayashi

    Inventor： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    IPC: H01M10/40

    CPC classification number: H01M10/05 ,  H01M4/0404 ,  H01M4/0461 ,  H01M4/0492 ,  H01M4/0495 ,  H01M4/13 ,  H01M4/38 ,  H01M4/405 ,  H01M4/661 ,  H01M4/669 ,  H01M2004/027 ,  H01M2300/0025

    Abstract: A rechargeable electrochemical device comprising an anode (6) composed chiefly of activated carbon, cathode (3) composed of a lithium alloy, and an electrolyte composed of an organic solvent in which a lithium salt is dissolved. Lithium content in the lithium alloy forming the cathode (3) is selected such that, if converted to the electric capacity under the charged condition, the capacity of this alloy ranges from 3 to 20 times the anode capacity that is obtained when the anode is discharged from 3.0 V to 2.0 V in a single-pole potential with respect to metal lithium. This constitution is able to provide a reliable rechargeable electrochemical device, which is proof against super-discharge and excellent in charge and discharge cycle life.

    Abstract translation: 一种可充电电化学装置，包括主要由活性炭构成的阴极（6），由锂合金构成的阳极（3）和由其中溶解有锂盐的有机溶剂构成的电解质。 选择形成阳极（3）的锂合金中的锂含量，使得如果在充电条件下转换为电容，则该合金的容量为阴极排出时获得的阴极容量的3至20倍 从相对于金属锂的单极电位为3.0V至2.0V。 这种构造能够提供可靠的可再充电电化学装置，其是防止超放电和充放电循环寿命优异的。

    ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF
    10.
    发明申请
    ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF 审中-公开
    蚀刻硅结构，形成蚀刻硅结构的方法及其用途

    公开(公告)号：WO2013140177A2

    公开(公告)日：2013-09-26

    申请号：PCT/GB2013/050742

    申请日：2013-03-21

    Applicant: NEXEON LIMITED

    Inventor： LIU, Fengming ,  JIANG, Yuxiong ,  FRIEND, Christopher Michael ,  SPEED, Jonathon

    IPC: C23C18/00

    CPC classification number: H01M4/386 ,  C01B33/02 ,  C09K13/08 ,  C23C18/1605 ,  C23C18/1607 ,  C23C18/1635 ,  C23C18/1689 ,  H01L21/30604 ,  H01L21/3081 ,  H01M4/0402 ,  H01M4/0492 ,  H01M4/134 ,  H01M4/1395 ,  H01M10/0525 ,  Y10T428/24479

    Abstract: A method of etching silicon of a material comprising silicon, the method comprising the steps of partially covering a silicon surface of the material comprising silicon with an elemental metal and then carrying out a metal-assisted chemical etching of the silicon by exposing the partially covered silicon surface to an etching composition, wherein at least some of the elemental metal for the metal-assisted chemical etching is formed by either: (a) exposing the silicon surface to a composition comprising metal ions, wherein the elemental metal forms by reduction of the metal ions and wherein the composition comprising metal ions is substantially free of HF, or (b) depositing the elemental metal directly onto the silicon surface.

    Abstract translation: 一种蚀刻包含硅的材料的硅的方法，该方法包括以下步骤：用元素金属部分地覆盖包含硅的材料的硅表面，然后通过暴露部分覆盖的硅进行金属辅助化学蚀刻硅 其中用于金属辅助化学蚀刻的至少一些元素金属通过以下方式形成：（a）将硅表面暴露于包含金属离子的组合物，其中通过还原金属形成元素金属 离子，并且其中包含金属离子的组合物基本上不含HF，或（b）将元素金属直接沉积到硅表面上。

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