公开(公告)号：WO2011056890A1

公开(公告)日：2011-05-12

申请号：PCT/US2010/055324

申请日：2010-11-03

Applicant: OSTENDO TECHNOLOGIES, INC. ,  SPIBERG, Philippe ,  EL-GHOROURY, Hussein, S. ,  USIKOV, Alexander ,  SYRKIN, Alexander ,  SCANLAN, Bernard ,  SOUKHOVEEV, Vitali

Inventor： SPIBERG, Philippe ,  EL-GHOROURY, Hussein, S. ,  USIKOV, Alexander ,  SYRKIN, Alexander ,  SCANLAN, Bernard ,  SOUKHOVEEV, Vitali

IPC: C30B25/18 ,  C30B29/40

CPC classification number: C30B25/183 ,  C30B25/186 ,  C30B29/403

Abstract: A method of growing planar non-polar m-plane Ill-Nitride material, such as an m- plane gallium nitride (GaN) epitaxial layer, wherein the Ill-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane Ill-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.

Abstract translation: 生长平面非极性m面III氮化物材料的方法，例如m面氮化镓（GaN）外延层，其中氮化铟材料生长在合适的衬底上，例如m面蓝宝石 使用氢化物​​气相外延（HVPE）。 该方法包括在氨和氩的环境中在升高的温度下原位预处理衬底，在退火的衬底上生长诸如氮化铝（AlN）或铝 - 氮化镓（AlGaN）的中间层， 使用HVPE在中间层上的 - 极性m面的氮化钛外延层。 公开了各种替代方法。

公开(公告)号：WO2017106387A1

公开(公告)日：2017-06-22

申请号：PCT/US2016/066729

申请日：2016-12-14

Applicant: OSTENDO TECHNOLOGIES, INC.

Inventor： VOLKOVA, Anna ,  IVANTSOV, Vladimir ,  SYRKIN, Alexander ,  HASKELL, Benjamin ,  EL-GHOROURY, Hussein

IPC: H01L21/20 ,  H01L29/15 ,  H01L33/24

CPC classification number: H01J1/308 ,  C30B29/406 ,  C30B29/62 ,  C30B29/66 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/20 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/109 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.

Abstract translation: 公开了一种用于在衬底上生长强烈排列的均匀截面半导体复合纳米柱的方法。 该方法包括：（a）在衬底表面上形成小面锥形凹坑; （b）在凹坑的小平面上开始成核; 和; （c）促进细胞核向凹坑中心的生长，在那里它们与孪生结合并随后一起成长为复合纳米柱。 多量子阱核 - 壳纳米柱异质结构可以在纳米柱的侧壁上生长。 此外，可以通过纳米柱的过度生长来形成连续的半导体外延层，以便于制造高质量的平面器件结构或用于发光结构。

公开(公告)号：WO2014176283A1

公开(公告)日：2014-10-30

申请号：PCT/US2014/035042

申请日：2014-04-22

Applicant: OSTENDO TECHNOLOGIES, INC.

Inventor： SOUKHOVEEV, Vitali ,  IVANTSOV, Vladimir ,  HASKELL, Benjamin A. ,  EL-GHOROURY, Hussein S. ,  SYRKIN, Alexander

IPC: C30B25/18 ,  C30B23/02 ,  C30B29/40

CPC classification number: H01L21/02381 ,  C30B23/025 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/2003

Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.

Abstract translation: 已经开发了一种克服现有技术在半极性III族氮化物模板，膜和材料的性能和制造中的缺陷的方法。 已经开发了一种新型氢化物气相外延变体，其提供了纳米级周期性结构的受控生长。 已经利用生长方法来生长具有不同组成的交替AlGaN层的多周期堆叠。 这种周期性结构对半极性III-氮化物的应用产生了优异的材料的结构和形态特性，包括在生长材料的自由表面处减少穿透位错密度和表面粗糙度。 这种增强能够制造优质的半极性III族氮化物电子和光电子器件，包括但不限于晶体管，发光二极管和激光二极管。

公开(公告)号：WO2010009325A2

公开(公告)日：2010-01-21

申请号：PCT/US2009/050867

申请日：2009-07-16

Applicant: OSTENDO TECHNOLOGIES, INC. ,  USIKOV, Alexander ,  SYRKIN, Alexander ,  BROWN, Robert, G.w. ,  EL-GHOROURY, Hussein, S. ,  SPIBERG, Philippe ,  IVANTSOV, Vladimir ,  KOVALENKOV, Oleg ,  SHAPOVALOVA, Lisa

Inventor： USIKOV, Alexander ,  SYRKIN, Alexander ,  BROWN, Robert, G.w. ,  EL-GHOROURY, Hussein, S. ,  SPIBERG, Philippe ,  IVANTSOV, Vladimir ,  KOVALENKOV, Oleg ,  SHAPOVALOVA, Lisa

IPC: C30B25/02 ,  C30B25/20 ,  C30B29/40

CPC classification number: C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/2003

Abstract: A method of growing planar non-polar m-plane or semi-polar III- Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the Ill-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III- Nitride epitaxial layer on the intermediate layer using HVPE.

Abstract translation: 生长平面非极性m面或半极性III氮化物材料的方法，例如m面氮化镓（GaN）外延层，其中氮化铟材料在合适的衬底上生长，例如 m面蓝宝石衬底，采用氢化物气相外延（HVPE）。 该方法包括在氨和氩的环境中在升高的温度下原位预处理衬底，在退火的衬底上生长诸如氮化铝（AlN）或铝 - 氮化镓（AlGaN）的中间层， 使用HVPE在中间层上的极性m面III-氮化物外延层。