公开(公告)号：WO2017106387A1

公开(公告)日：2017-06-22

申请号：PCT/US2016/066729

申请日：2016-12-14

Applicant: OSTENDO TECHNOLOGIES, INC.

Inventor： VOLKOVA, Anna ,  IVANTSOV, Vladimir ,  SYRKIN, Alexander ,  HASKELL, Benjamin ,  EL-GHOROURY, Hussein

IPC: H01L21/20 ,  H01L29/15 ,  H01L33/24

CPC classification number: H01J1/308 ,  C30B29/406 ,  C30B29/62 ,  C30B29/66 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/20 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/109 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.

Abstract translation: 公开了一种用于在衬底上生长强烈排列的均匀截面半导体复合纳米柱的方法。 该方法包括：（a）在衬底表面上形成小面锥形凹坑; （b）在凹坑的小平面上开始成核; 和; （c）促进细胞核向凹坑中心的生长，在那里它们与孪生结合并随后一起成长为复合纳米柱。 多量子阱核 - 壳纳米柱异质结构可以在纳米柱的侧壁上生长。 此外，可以通过纳米柱的过度生长来形成连续的半导体外延层，以便于制造高质量的平面器件结构或用于发光结构。