Abstract:
본 발명은 구리 식각용 조성물 및 과산화수소계 금속 식각용 조성물에 관한 것이며, 보다 구체적으로 구리와 유기물 사이에 형성된 킬레이트 결합의 안정성을 높여 식각용 조성물로부터 구리 침전물의 발생을 억제할 수 있는 구리 식각용 조성물 및 과산화수소계 금속 식각용 조성물 내 과산화수소의 분해 및 다른 성분들의 변성을 방지할 수 있는 과산화수소계 금속 식각용 조성물에 관한 것이다.
Abstract:
A method of producing an article is described. The method includes (a) providing a substrate comprising an etchable surface layer; (b) coating the etchable surface layer with a composition comprising a non- volatile, etch-resistant component in a volatile liquid carrier; and (c) drying the composition to remove the liquid carrier, whereupon the non- volatile, etch-resistant component self-assembles to form etch-resistant traces on the etchable surface layer. The liquid carrier is in the form of an emulsion comprising a continuous phase and a second phase in the form of domains dispersed in the continuous phase.
Abstract:
The present invention is directed to wet processing methods for the manufacture of electronic component precursors, such as semiconductor wafers used in integrated circuits.
Abstract:
The present disclosure provides a polishing composition that includes at least one first amine, at least one second amine, and other components such as azoles. The first amine has a low molecular weight, for example 120 g/mol or less. The second amine has a high molecular weight, for example 125 g/mol or higher. The compositions can polish substrates that include copper and molybdenum, or alloys of each, at a high selectivity of copper to molybdenum.
Abstract:
The invention relates to a process for preparing potassium thiosulfate, potassium sulfite or potassium bisulfite comprising the following steps: Step (1a): providing a potassium hydroxide or potassium carbonate solution for neutralizing acid forming components such as dissolving SO 2 or H 2 S; Step (1b): providing an SO 2 contacting solution, containing at least some potassium sulfite or potassium bisulfite or potassium thiosulfate; Step (2): providing SO 2 gas; Step (3): reacting these to absorb the SO 2 gas and to form an intermediate reaction mixture comprising potassium sulfite, or potassium bisulfite or a mixture thereof, and optionally recovering the potassium sulfite, or potassium bisulfite or a mixture thereof, and/or optionally using steps 4 and 5; Step (4): adding sulfur or sulfide containing compound containing sulfur having the oxidation state of 0, -2 or of between 0 and -2 to the reaction mixture and optionally potassium hydroxide or potassium carbonate, and reacting the mixture under suitable conditions to form potassium thiosulfate; and Step (5): recovering the potassium thiosulfate, and optionally concentrating the potassium thiosulfate.
Abstract:
L'invention concerne un procédé de nettoyage utilisant une solution à base de liquide ionique particulier de type protique (PILs: Protic ionic liquids), la solution étant employée comme fluide de nettoyage et/ou de décapage de surfaces telles que les métaux, les céramiques, les verres, les semi-conducteurs et les matières plastiques, les surfaces ayant été oxydées et/ou souillées par des huiles, des graisses ou des salissures, et/ou ayant été recouvertes d'un revêtement de protection. Le liquide ionique résulte du mélange d'une diamine de type imidazole et d'au moins un acide contenant au moins une fonction carboxylique.