COATING MATERIALS FOR OXIDE THIN FILM TRANSISTORS
    1.
    发明申请
    COATING MATERIALS FOR OXIDE THIN FILM TRANSISTORS 审中-公开
    氧化物薄膜晶体管涂层材料

    公开(公告)号:WO2014011935A1

    公开(公告)日:2014-01-16

    申请号:PCT/US2013/050157

    申请日:2013-07-11

    IPC分类号: H01L29/786

    摘要: The present teachings provide a coating composition (a passivation formulation) for preparing a coating material in a metal oxide thin film transistor, where the coating material comprises a blend including a crosslinkable component and a stabilizing agent. Incorporation of a stabilizing agent according to the present teachings in the coating material can lead to improved device performance of the metal oxide thin film transistor, in particular, reduced shift in the threshold voltage and long-term bias-stress stability.

    摘要翻译: 本教导提供了用于在金属氧化物薄膜晶体管中制备涂层材料的涂料组合物(钝化剂),其中涂料包含包含可交联组分和稳定剂的共混物。 根据本发明的稳定剂在涂料中的引入可以导致金属氧化物薄膜晶体管的器件性能的提高,特别是阈值电压的偏移和长期的偏压 - 应力稳定性的降低。