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    COATING MATERIALS FOR OXIDE THIN FILM TRANSISTORS
    1.
    发明申请
    COATING MATERIALS FOR OXIDE THIN FILM TRANSISTORS 审中-公开
    氧化物薄膜晶体管涂层材料

    公开(公告)号：WO2014011935A1

    公开(公告)日：2014-01-16

    申请号：PCT/US2013/050157

    申请日：2013-07-11

    申请人： POLYERA CORPORATION

    发明人： FACCHETTI, Antonio ,  SHEETS, William, Christopher ,  FRYE, Don ,  WANG, Jingqi ,  HSIAO, Chung-Chin ,  WANG, Ming-Huei

    IPC分类号： H01L29/786

    CPC分类号： H01L29/78693 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/7869 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/052 ,  H01L51/0545

    摘要： The present teachings provide a coating composition (a passivation formulation) for preparing a coating material in a metal oxide thin film transistor, where the coating material comprises a blend including a crosslinkable component and a stabilizing agent. Incorporation of a stabilizing agent according to the present teachings in the coating material can lead to improved device performance of the metal oxide thin film transistor, in particular, reduced shift in the threshold voltage and long-term bias-stress stability.

    摘要翻译： 本教导提供了用于在金属氧化物薄膜晶体管中制备涂层材料的涂料组合物（钝化剂），其中涂料包含包含可交联组分和稳定剂的共混物。 根据本发明的稳定剂在涂料中的引入可以导致金属氧化物薄膜晶体管的器件性能的提高，特别是阈值电压的偏移和长期的偏压 - 应力稳定性的降低。

    SELF-ALIGNED METAL OXIDE TRANSISTORS AND METHODS OF FABRICATING SAME
    2.
    发明申请
    SELF-ALIGNED METAL OXIDE TRANSISTORS AND METHODS OF FABRICATING SAME 审中-公开
    自对准的金属氧化物晶体管及其制造方法

    公开(公告)号：WO2015188181A1

    公开(公告)日：2015-12-10

    申请号：PCT/US2015/034686

    申请日：2015-06-08

    申请人： POLYERA CORPORATION

    发明人： HSIEH, Hsin-Hung ,  HSIAO, Chung-Chin ,  FACCHETTI, Antonio

    IPC分类号： H01L27/32 ,  H01L51/56

    CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78696

    摘要： A self-aligned metal oxide transistor can be fabricated by contacting the source and drain regions of the metal oxide active layer with a reductive polymer, thereby doping the source and drain regions with valence electrons from the reductive polymer and reducing the electrical resistance in the source and drain regions. The reductive polymer can be an electrically insulating polymer that has, in its backbone and/or its pendant group(s), one or more nitrogen atoms with a lone pair of electrons. The reductive polymer can be deposited over the oxide semiconductor layer as the organic interlayer dielectric.

    摘要翻译： 可以通过使金属氧化物活性层的源极和漏极区域与还原性聚合物接触来制造自对准的金属氧化物晶体管，由此从还原性聚合物掺杂价电子的源极和漏极区域并降低源极中的电阻 和漏区。 还原性聚合物可以是在其主链和/或其侧基具有一个或多个具有一对电子的氮原子的电绝缘聚合物。 可以在氧化物半导体层上沉积还原性聚合物作为有机层间电介质。