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公开(公告)号:WO2019059966A1
公开(公告)日:2019-03-28
申请号:PCT/US2018/027427
申请日:2018-04-13
Applicant: RAYTHEON COMPANY
Inventor: LIN, Stephanie, J. , CHOW, James, R. , SPARIOSU, Kalin
CPC classification number: C09K11/662 , B82Y20/00 , B82Y40/00 , C01B17/20 , C01B19/007 , C01G21/21 , C01P2002/84 , C01P2004/64 , C01P2004/84 , C01P2006/60 , C09K11/025 , C09K11/54 , C09K11/565 , C09K11/883 , F21K9/64 , F21V7/22 , F21Y2115/10 , H01L31/035218 , H01L33/502 , H01L2933/0041 , Y10S977/774 , Y10S977/825 , Y10S977/892 , Y10S977/95
Abstract: In certain embodiments, a first semiconductor material is vaporized to generate a vapor phase condensate. The vapor phase condensate is allowed to form nanoparticles. The nanoparticles are annealed to yield nanoparticles or cores. The cores are overcoated by introducing a solution containing second semiconductor material precursors in a coordinating solvent into a suspension of cores at a desired elevated temperature and mixing for a period of time sufficient to cause diffusion of the shell into the core. The diffusion of the shell into the core causes the quantum dots to exhibit a broadened optical emission. The produced quantum dots may be incorporated into a quantum dot based radiation source.