公开(公告)号：WO2018006131A1

公开(公告)日：2018-01-11

申请号：PCT/AU2017/050699

申请日：2017-07-06

Applicant: RMIT UNIVERSITY

Inventor： SRIRAM, Sharath ,  AHMED, Taimur ,  WALIA, Sumeet ,  BHASKARAN, Madhu

IPC: H01L45/00 ,  H01L27/24 ,  G11C11/56

CPC classification number: G11C13/0069 ,  G11C11/5685 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/31 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

Abstract: A memristor device is provided, comprising a first electrode; a second electrode; a cathode metal layer disposed on a surface of the first electrode; and an active region disposed between and in electrical contact with the second electrode and the cathode metal layer, the active region comprising at least one layer of an amorphous metal oxide, wherein the amorphous metal oxide comprises doping atoms of a dopant element selected from the group consisting of aluminium, nickel, iron and chromium, and wherein when a switching voltage is applied between the first and second electrodes, the active region exhibits a resistive switching behaviour. Also provided is a method of fabricating such a memristor device.

Abstract translation: 提供了一种忆阻器装置，其包括第一电极; 第二电极; 设置在所述第一电极的表面上的阴极金属层; 以及设置在第二电极和阴极金属层之间并与第二电极和阴极金属层电接触的有源区，有源区包括至少一层非晶金属氧化物， 由铝，镍，铁和铬组成，并且其中当在第一和第二电极之间施加开关电压时，有源区呈现出电阻切换行为。 还提供了制造这种忆阻器器件的方法。