公开(公告)号：WO0229878A3

公开(公告)日：2003-01-23

申请号：PCT/US0130109

申请日：2001-09-26

Applicant: RODEL INC

Inventor： COOK LEE MELBOURNE ,  OLIVER MICHAEL R

IPC: B24B1/00 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/321 ,  H01L21/768

CPC classification number: H01L21/3212 ,  H01L21/31053 ,  H01L21/31633 ,  H01L21/76819 ,  H01L21/76834 ,  H01L21/7684

Abstract: A semiconductor wafer (1) has, an underlying dielectric layer (3) with non-planarity features at its surface due to damascene topology, and a successive dielectric layer (9) that is without damascene topology overlying the first dielectric layer (3), the successive dielectric layer (9) having a smooth polished planar surface (10) that minimizes cumulative non-planarity. The surface is polished by chemical-mechanical planarization with a reactive liquid borne by an aqueous polishing fluid applied at an interface of the successive dielectric layer (3) and a polishing pad.

Abstract translation: 半导体晶片（1）具有由于镶嵌拓扑而在其表面具有非平面特征的底层电介质层（3），以及不具有叠加在第一介电层（3）上的镶嵌拓扑的连续介质层（9） 所述连续介电层（9）具有使累积非平面度最小化的光滑抛光平面（10）。 通过化学机械平面化处理表面，其中反应液体由施加在连续介质层（3）和抛光垫的界面处的水性抛光液承载。

公开(公告)号：WO0241369A3

公开(公告)日：2004-01-08

申请号：PCT/US0143368

申请日：2001-11-20

Applicant: RODEL INC

Inventor： BANERJEE GAUTAM ,  COOK LEE MELBOURNE

IPC: B23H5/08 ,  B24B37/04 ,  C25F3/30 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/00 ,  H01L21/306

CPC classification number: H01L21/3212 ,  B23H5/08 ,  B24B37/046 ,  C25F3/30 ,  H01L21/32125 ,  H01L21/32134

Abstract: Removing metal from a semiconductor substrate by dissolving ions of the metal into an electrolyte, comprising the steps of: applying a voltage across a polishing pad and the substrate, while an electropolishing electrolyte is dispensed at an interface of the substrate and the polishing pad, and while pooling the electrolyte about the substrate by the polishing pad.

Abstract translation: 通过将金属的离子溶解到电解质中，从半导体衬底去除金属，包括以下步骤：在电抛光电解质分配在衬底和抛光垫的界面处，在抛光垫和衬底之间施加电压，以及 同时通过抛光垫将电解液围绕衬底汇集。