公开(公告)号：WO2008114947A1

公开(公告)日：2008-09-25

申请号：PCT/KR2008/001332

申请日：2008-03-10

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  UHM, Jae Won

Inventor： LEE, Byoung Su ,  UHM, Jae Won

IPC: H01L31/10

CPC classification number: H01L31/02322

Abstract: The present invention relates to a photodiode, more particularly to a photodiode having a luminescence converter converting a short-wavelength incident light to a long-wavelength emitting light. The photodiode having a luminescence converter according to the present invention has a characteristic that the sensitivity of photodiode is uniform irrespective of a wavelength of an incident light, by converting a specific-wavelength incident light to a restricted-wavelength emitting light and allowing the converted light to be incident to a photodiode region.

Abstract translation: 光电二极管技术领域本发明涉及一种光电二极管，更具体地说涉及具有将短波长入射光转换为长波长发光的发光转换器的光电二极管。 具有根据本发明的发光转换器的光电二极管的特征在于，通过将特定波长的入射光转换成受限制的波长发光并且允许转换的光，光电二极管的灵敏度与入射光的波长无关， 入射到光电二极管区域。

公开(公告)号：WO2009066909A3

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006751

申请日：2008-11-17

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H04N5/335

Abstract: Provided is a unit pixel of an image sensor in which photodiodes are arranged in a stacking structure and transfer gates are provided for the respective photodiodes so that signals are sequentially transferred to extract information on a plurality of color components and, by which dark current generated at a substrate surface can be reduced by using a buried-type photodiode. Accordingly, since a buried-type photodiode is used in a unit pixel of an image sensor including a photodiode having a stacking structure, dark current generated by surface detect can be suppressed. In addition, since signals are sequentially transferred through transfer gates for respective photodiodes having a stacking structure, information on a plurality of color components can be extracted without having to use complex peripheral circuits.

公开(公告)号：WO2009066896A1

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006624

申请日：2008-11-10

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: G01N33/533 ,  H01L31/10 ,  H01L27/146 ,  G01N33/50

CPC classification number: H01L27/14625 ,  G01N21/6454 ,  G01N2021/6471 ,  H01L27/14621 ,  H01L27/14627

Abstract: Disclosed is a fluorescent biochip diagnosis device including: an image sensor having a plurality of photo-detectors; and a band-pass filter unit having a plurality of band-pass filters formed on a plurality of the photo-detectors, wherein a plurality of the band-pass filters are implemented by forming a nanostructure pattern in a metal layer. Since the fluorescent biochip diagnosis device has little optical loss due to a short interval between the biochip and the photo-detector, excellent sensitivity can be provided. Also, since signals can be simultaneously measured by combining light beams having a short wavelength used as an illumination depending on a type of a fluorescent protein material, cost of the diagnosis device and a diagnosis time can be reduced.

Abstract translation: 公开了一种荧光生物芯片诊断装置，包括：具有多个光检测器的图像传感器; 以及具有形成在多个光检测器上的多个带通滤波器的带通滤波器单元，其中通过在金属层中形成纳米结构图案来实现多个带通滤波器。 由于荧光生物芯片诊断装置由于生物芯片和光电检测器之间的间隔小而具有很小的光学损失，因此可以提供极好的灵敏度。 此外，由于可以根据荧光蛋白质材料的种类组合用作照明的短波长的光束同时测量信号，所以可以降低诊断装置的成本和诊断时间。

公开(公告)号：WO2008150139A1

公开(公告)日：2008-12-11

申请号：PCT/KR2008/003191

申请日：2008-06-09

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/14

CPC classification number: H01L27/14667 ,  H01L27/14627

Abstract: Provided is a stacked image sensor. Particularly, provided are a stacked image sensor including a photosensitive element portion having a photo-conductive thin film on an upper portion of a wafer where a peripheral circuit is formed and a method of manufacturing the stacked image sensor. In the stacked image sensor according to the present invention, since a wafer where a circuit is formed and a photosensitive element portion are formed in a stacked structure, a whole size of the image sensor can be reduced, and there is no optical crosstalk due to absorption of incident light to adjacent pixels. In addition, since a photo-conductive element having a high light absorbance is used, a high photo-electric conversion efficiency can be obtained. In addition, in the method of manufacturing a stacked image sensor according to the present invention, since the upper photosensitive element can be formed by using a simple low-temperature process, a production cost can be reduced.

Abstract translation: 提供了一种堆叠图像传感器。 特别地，提供了一种堆叠图像传感器，其包括在形成外围电路的晶片的上部上具有光导薄膜的感光元件部分和制造叠层图像传感器的方法。 在根据本发明的堆叠式图像传感器中，由于形成了电路的晶片和形成有层叠结构的感光元件部分，所以能够减小图像传感器的整体尺寸，并且由于 将入射光吸收到相邻像素。 此外，由于使用具有高吸光度的光导体元件，因此可以获得高的光电转换效率。 此外，在根据本发明的层叠图像传感器的制造方法中，由于可以通过使用简单的低温处理来形成上部感光元件，所以可以降低制造成本。

公开(公告)号：WO2008136634A1

公开(公告)日：2008-11-13

申请号：PCT/KR2008/002547

申请日：2008-05-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/148

Abstract: The present invention relates to a unit pixel of an image sensor having a large area photodiode with high sensitivity, and more particularly, to a unit pixel of an image sensor having a high sensitivity photodiode which includes a plurality of transfer gates on the photodiode having a large area to effectively transfer photocharges generated at the photodiode to a floating diffusion region.

Abstract translation: 本发明涉及具有高灵敏度的大面积光电二极管的图像传感器的单位像素，更具体地，涉及具有高灵敏度光电二极管的图像传感器的单位像素，该灵敏度光电二极管在光电二极管上包括多个传输门， 大面积以有效地将在光电二极管处产生的光电荷转移到浮动扩散区域。

公开(公告)号：WO2006123881A1

公开(公告)日：2006-11-23

申请号：PCT/KR2006/001817

申请日：2006-05-16

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/103 ,  Y02E10/547

Abstract: A photodiode for an image sensor having an improved light sensitivity and decrease in size over a silicon-based photodiode and a manufacturing method of the photodiode are provided. The photodiode for the image sensor has a silicon-germanium alloy layer, which contains germanium of 0.1 to 15 wt% with respect to a weight of silicon-germanium alloy, formed on a silicon substrate and a photodioderegion formed on the silicon-germanium alloy layer. Since the light absorbance of germanium is high, the photodiode in which a relatively thin silicon- germanium alloy layer is formed has a superior property of optical sensing to a conventional silicon-based image sensor. Accordingly, the silicon-germanium alloy layer thinner than a silicon layer used in a conventional image sensor can be used for absorbing sufficient light so as to decrease in size of the image sensor using the photodiode. In addition, it is possible to operate the photodiode at a high speed due to rapid transport of charges in the silicon-germanium alloy layer.

Abstract translation: 提供了一种用于具有改善的光敏度和相对于硅基光电二极管的尺寸减小的图像传感器的光电二极管以及光电二极管的制造方法。 用于图像传感器的光电二极管具有硅 - 锗合金层，其包含相对于在硅衬底上形成的硅 - 锗合金重量为0.1至15重量％的锗和形成在硅 - 锗合金层上的光电二极管 。 由于锗的吸光度高，因此形成相对较薄的硅 - 锗合金层的光电二极管具有优异的光学感测性能与传统的硅基图像传感器。 因此，比传统图像传感器中使用的硅层薄的硅 - 锗合金层可以用于吸收足够的光，从而减小使用光电二极管的图像传感器的尺寸。 此外，由于硅 - 锗合金层中的电荷的快速传输，可以高速操作光电二极管。

公开(公告)号：WO2009066894A2

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006603

申请日：2008-11-10

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

Abstract: The present invention relates to a technology for reducing dark current noise by discharging electrons accumulated on a surface of an image sensor photodiode. In an N-type or P-type photodiode, a channel is formed between the photodiode and a power voltage terminal, so that electrons (or holes) accumulated on a surface of the photodiode are discharged to the power voltage terminal through the channel.

Abstract translation: 本发明涉及通过放电积累在图像传感器光电二极管的表面上的电子来减少暗电流噪声的技术。 在N型或P型光电二极管中，在光电二极管和电源电压端子之间形成通道，使得积聚在光电二极管表面的电子（或空穴）通过通道被排放到电源电压端子。

公开(公告)号：WO2009001988A1

公开(公告)日：2008-12-31

申请号：PCT/KR2007/005147

申请日：2007-10-19

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  LEE, Do Young

Inventor： LEE, Byoung Su ,  LEE, Do Young

IPC: G01N33/533

CPC classification number: G01N21/6454 ,  B01L3/5085 ,  B01L2300/0654 ,  B01L2300/0829

Abstract: A diagnosis device using an image sensor and a method of manufacturing the same are provided. The diagnosis device using the image sensor includes: a substrate in which an image sensor including a plurality of optical sensors is formed; an insulation layer formed on the substrate; and a plurality of wells formed in the insulation layer in correspondence with the plurality of optical sensors, the plurality of wells into which reference samples for biochemical reactions with a target sample are inserted.

Abstract translation: 提供了使用图像传感器的诊断装置及其制造方法。 使用图像传感器的诊断装置包括：形成有包括多个光学传感器的图像传感器的基板; 形成在所述基板上的绝缘层; 以及与所述多个光学传感器对应地形成在所述绝缘层中的多个阱，所述多个孔插入其中插入用于与目标样品进行生物化学反应的参考样品。

公开(公告)号：WO2008069606A1

公开(公告)日：2008-06-12

申请号：PCT/KR2007/006334

申请日：2007-12-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L21/3205

CPC classification number: H01L27/0688 ,  H01L21/8221

Abstract: Provided are a method of manufacturing an integrated circuit having a stacked structure by forming a crystalline semiconductor thin film on a crystalline or amorphous substrate and the integrated circuit. Accordingly, the method of manufacturing the integrated circuit having the stacked structure uses a method of growing a crystalline semiconductor thin film on a polycrystalline or amorphous substrate, so that the method can be easily performed at low costs, and high-speed processing and high-density integration can be achieved.

Abstract translation: 提供一种通过在晶体或非晶衬底和集成电路上形成晶体半导体薄膜来制造具有堆叠结构的集成电路的方法。 因此，具有层叠结构的集成电路的制造方法使用在多晶或非晶基板上生长结晶半导体薄膜的方法，从而可以容易地以低成本执行该方法，并且高速处理和高速处理， 可以实现密度整合。

公开(公告)号：WO2007086659A1

公开(公告)日：2007-08-02

申请号：PCT/KR2007/000136

申请日：2007-01-09

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H02N2/02

CPC classification number: G02B7/08 ,  H02K7/1085 ,  H02K33/18 ,  H02K41/0356

Abstract: The present invention relates to a voice coil module (VCM), and more particularly, to a VCM used for lens fixation and displacement measurement in order to prevent and control power consumption. Accordingly, in the VCM, power is not additionally consumed in order to maintain a specific position of the lens in a state that a focus of the lens is adjusted. Further, the lens is not moved and an optical axis is not distorted when a vibration occurs while an image is captured. Furthermore, the lens can be accurately controlled by measuring the present position of the lens.

Abstract translation: 本发明涉及一种音圈模块（VCM），更具体地说，涉及用于透镜固定和位移测量的VCM，以便防止和控制功耗。 因此，在VCM中，为了将透镜的特定位置维持在调整了透镜的焦点的状态，不会额外消耗功率。 此外，当拍摄图像时发生振动时，透镜不移动并且光轴不失真。 此外，可以通过测量透镜的当前位置来精确地控制透镜。