公开(公告)号：WO2019143776A1

公开(公告)日：2019-07-25

申请号：PCT/US2019/013943

申请日：2019-01-17

申请人： SOLAR JUNCTION CORPORATION

发明人： ZHANG, Lan ,  LUCOW, Ewelina ,  GAO, Ligang

IPC分类号： H01L31/0687 ,  H01L31/0224

CPC分类号： H01L31/0687 ,  H01L31/02245

摘要： Surface mount semiconductor devices and methods for fabricating surface mount semiconductor devices are disclosed. In particular, back-contact-only multijunction photovoltaic cells and the process flows for making such cells are disclosed. The surface mount multijunction photovoltaic cells include through- wafer- vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. Before etching the through- wafer-vias the substrate is thinned to less than 150 μm. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers. Low stress passivation layers are used to reduce the thermo-mechanical stress of the semiconductor devices.

公开(公告)号：WO2017205180A1

公开(公告)日：2017-11-30

申请号：PCT/US2017/033325

申请日：2017-05-18

申请人： SOLAR JUNCTION CORPORATION

发明人： CHARY, Sathya ,  LUCOW, Ewelina ,  SIALA, Sabeur ,  SUAREZ, Ferran ,  TORABI, Ali ,  ZHANG, Lan

IPC分类号： H01L31/0224 ,  H01L31/0725 ,  H01L31/0216

摘要： Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

摘要翻译： 公开了光伏电池，用于制造表面安装型多结光伏电池的方法，用于组装太阳能电池板的方法以及包括光伏电池的太阳能电池板。 表面安装多结光伏电池包括用于将前表面外延层互连到后表面上的接触焊盘的贯穿晶片通孔。 使用湿刻蚀工艺形成贯穿晶片通孔，该工艺非选择性地去除半导体材料，而在异质外延III-V族半导体层之间的刻蚀速率没有显着差异。

公开(公告)号：WO2017127538A1

公开(公告)日：2017-07-27

申请号：PCT/US2017/014125

申请日：2017-01-19

申请人： SOLAR JUNCTION CORPORATION

发明人： LUCOW, Ewelina ,  ZHANG, Lan ,  CHARY, Sathya ,  SUAREZ, Ferran

IPC分类号： H01L31/0224 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/076

CPC分类号： H01L31/022441 ,  H01L31/02168 ,  H01L31/02245 ,  H01L31/0304 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/076 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/548

摘要： This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

摘要翻译： 本公开涉及用于制造半导体器件的半导体器件和方法。 特别地，本公开涉及仅背接触式多结太阳能电池以及用于制造这种太阳能电池的工艺流程，包括非选择性去除半导体材料的湿法刻蚀工艺，其在异质外延III-V族半导体层之间的刻蚀速率没有显着差异。