摘要:
Surface mount semiconductor devices and methods for fabricating surface mount semiconductor devices are disclosed. In particular, back-contact-only multijunction photovoltaic cells and the process flows for making such cells are disclosed. The surface mount multijunction photovoltaic cells include through- wafer- vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. Before etching the through- wafer-vias the substrate is thinned to less than 150 μm. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers. Low stress passivation layers are used to reduce the thermo-mechanical stress of the semiconductor devices.
摘要:
A photovoltaic module (1) with a plurality of photovoltaic units (3) each having a positive contact terminal (8) and a negative contact terminal (7), and a single layer back contact substrate (4). The back contact substrate (4) has a positive surface part (6) electrically connected to the positive contact terminal (8) of each of the plurality of photovoltaic units (3), and a negative surface part (5) electrically connected to the negative contact terminal (7) of each of the plurality of photovoltaic units (3). The photovoltaic module (1) further has at least one contact bridge (9a, 9b) in a layer of the photovoltaic module (1) outside of the single layer back contact substrate (4), which provides an electrical connection in the negative surface part (5) and/or in the positive surface part (6).
摘要:
A photovoltaic module comprises a back substrate having a plurality of conductive interconnects on top thereof. A conductive interconnect includes a first contact region and a second contact region. The photovoltaic module further comprises a plurality of photovoltaic cells comprising front electrodes disposed on a front surface of a photovoltaic layer on top of back electrodes on top of a support substrate. A plurality of back vias extending through the support substrate of a first cell form an electrical contact between the back electrodes and the second contact region, and a plurality of front vias extending through the support substrate, the back electrodes and the photovoltaic layer of a second cell form an electrical contact between the front electrodes and the first contact region, and is insulated from an electrical contact with the back electrodes and a P side of the photovoltaic layer.
摘要:
Back side connection layer for a photo-voltaic module with a plurality of PV-cells (1, 2). The PV-cells (1, 2) are of a type having a plurality of back side contacts (11, 12). A by-pass diode connection path (6) is formed in the back side connection layer (3) along an edge direction of two adjacent cells (1, 2) with a straight or meandering pattern around outer contacts (4, 5) of the plurality of back side contacts (11, 12) of the two adjacent cells (1, 2).
摘要:
Es wird ein Verfahren zur Herstellung einer Mehrzahl von Halbleiterbauelementen (1) mit folgenden Schritten angegeben: a) Bereitstellen einer Halbleiterschichtenfolge (2) mit einer ersten Halbleiterschicht (21), einer zweiten Halbleiterschicht (22) und einem zwischen der ersten Halbleiterschicht und der zweiten Halbleiterschicht angeordneten, zur Erzeugung und/oder zum Empfangen von Strahlung vorgesehenen aktiven Bereich (25); b) Ausbilden einer ersten Anschlussschicht (31) auf der der ersten Halbleiterschicht abgewandten Seite der zweiten Halbleiterschicht; c) Ausbilden einer Mehrzahl von Aussparungen (29) durch die Halbleiterschichtenfolge hindurch; d) Ausbilden einer Leitungsschicht (4) in den Aussparungen zur Herstellung einer elektrisch leitenden Verbindung zwischen der ersten Halbleiterschicht und der ersten Anschlussschicht; und e) Vereinzeln in die Mehrzahl von Halbleiterbauelementen, wobei aus der Halbleiterschichtenfolge für jedes Halbleiterbauelement ein Halbleiterkörper (20) mit zumindest einer der Mehrzahl von Aussparungen hervorgeht und die zumindest eine Aussparung in Draufsicht auf den Halbleiterkörper vollständig von dem Halbleiterkörper umgeben ist. Weiterhin wird ein Halbleiterbauelement angegeben.
摘要:
The invention relates to an electro-conductive paste comprising an inorganic reaction system with a high glass transition temperature in the preparation of electrodes in solar cells, particularly in the preparation of electrodes in MWT solar cells, particularly in the preparation of the metal wrap through, or plug, electrode in such solar cells. In particular, the invention relates to a solar cell precursor, a process for preparing a solar cell, a solar cell and a module comprising solar cells. The invention relates to a solar cell precursor at least comprising as precursor parts: i) a wafer with at least one hole with a Si surface; an electro-conductive paste at least comprising as paste constituents: a) metallic particles; b) an inorganic reaction system; c) an organic vehicle; and d) an additive; comprised by the hole, wherein the inorganic reaction system has a glass transition temperature above 550 °C.
摘要:
According to one aspect of the disclosed subject matter, a monolithically isled solar cell is provided. The solar cell comprises a semiconductor layer having a light receiving frontside and a backside opposite the frontside and attached to an electrically insulating backplane. A trench isolation pattern partitions the semiconductor layer into electrically isolated isles on the electrically insulating backplane. A first metal layer having base and emitter electrodes is positioned on the semiconductor layer backside. A patterned second metal layer providing cell interconnection and connected to the first metal layer by via plugs is positioned on the backplane.
摘要:
The present disclosure provides improved thin film photovoltaic devices and related methods of fabrication. More particularly, the present disclosure provides improved CdTe photovoltaic devices and related fabrication methods. Disclosed is a novel thin film photovoltaic device and means for its fabrication. An exemplary device includes a metal oxide layer between the absorber layer and the rear electrode, resulting in an ohmic back contact and having improved device stability. The metal oxide layer can include at least one of silver oxide or copper oxide, and may additionally contain nickel oxide, molybdenum oxide, and/or vanadium oxide. The present disclosure is directed towards formation of a ohmic back contact for solar cells, the back contact having improved stability. In certain embodiments, the present disclosure provides for an ohmic contact to p-type II-VI semiconductors, and to the fabrication of solar cells having improved stability, and to solar panels incorporating such back contact schemes.
摘要:
This solar cell element includes: a semiconductor substrate which has a light-receiving surface, and a rear surface located on the opposite side to the light-receiving surface, said semiconductor substrate having, provided to the rear surface thereof, a p-type diffusion region including a p-type impurity and an n-type diffusion region including an n-type impurity; a passivation layer which is provided to a portion or the entirety of the rear surface of the semiconductor substrate, and which includes at least one selected from the group consisting of Nb2O5, Ta2O5, V2O5, Y2O3, and HfO2; a first metal electrode provided to at least a portion of the p-type diffusion region; and a second metal electrode provided to at least a portion of the n-type diffusion region.
摘要翻译:该太阳能电池元件具有:具有受光面的半导体基板和位于受光面的相反侧的背面,在其背面设置有p型扩散 包括p型杂质的区域和包括n型杂质的n型扩散区域; 钝化层,其设置于半导体基板的背面的一部分或全部,且包含选自Nb 2 O 5,Ta 2 O 5,V 2 O 5,Y 2 O 3和HfO 2中的至少一种; 提供给所述p型扩散区的至少一部分的第一金属电极; 以及提供给n型扩散区的至少一部分的第二金属电极。
摘要:
The manufacturing of the solar cell comprises the etching of a via hole (2) with a tapered shape such that the diameter (A) at a first side (1a) of the substrate (1), intended as a main side for capturing incident light, is larger than the diameter (B) at the second side (1b) of the substrate (1). The first doped region (3) extends to a first surface (11) in the via hole (2). The second doped region (5) is present at the second side (1b) of the substrate (1) and is suitably formed by ion implantation. The resulting solar cell has an appropriate isolation between first doped region (3) and second doped region (5) over a second surface (12) in the via hole (2) and is suitably provided with a deep junction between the first doped region (3) and dopant in the substrate (1).