公开(公告)号：WO2021173209A1

公开(公告)日：2021-09-02

申请号：PCT/US2020/065374

申请日：2020-12-16

Applicant: SUNRISE MEMORY CORPORATION

Inventor： NORMAN, Robert ,  CHERNICOFF, Richard S. ,  HARARI, Eli

IPC: H01L25/065 ,  G06F12/0802 ,  G06F13/28 ,  G11C5/02 ,  G11C11/401 ,  H01L25/00

Abstract: A memory device includes a first semiconductor wafer portion including two or more adjacent quasi-volatile memory circuits formed on a common semiconductor substrate where each quasi-volatile memory circuit being isolated from an adjacent quasi-volatile memory circuit by scribe lines; and a second semiconductor wafer portion including at least one memory controller circuit formed on a semiconductor substrate. The memory controller circuit includes logic circuits and interface circuits. The memory controller circuit is interconnected to the two or more adjacent quasi-volatile memory circuits of the first semiconductor wafer portion through interconnect structures and the memory controller circuit operates the two or more quasi-volatile memory circuits as one or more quasi-volatile memories.

公开(公告)号：WO2021159028A1

公开(公告)日：2021-08-12

申请号：PCT/US2021/016964

申请日：2021-02-05

Applicant: SUNRISE MEMORY CORPORATION

Inventor： KIM, Youn Cheul ,  CHERNICOFF, Richard S. ,  QUADER, Khandker Nazrul ,  NORMAN, Robert D. ,  YAN, Tianhon ,  SALAHUDDIN, Sayeef ,  HARARI, Eli

IPC: H01L25/00 ,  H01L25/065 ,  G06F3/0611 ,  G06F3/0631 ,  H01L2224/211 ,  H01L2224/214 ,  H01L2225/1047 ,  H01L24/20 ,  H01L25/18 ,  H01L2924/1431 ,  H01L2924/1435

Abstract: A first circuit formed on a first semiconductor substrate is wafer-bonded to a second circuit formed on a second memory circuit, wherein the first circuit includes quasi-volatile or non-volatile memory circuits and wherein the second memory circuit includes fast memory circuits that have lower read latencies than the quasi-volatile or non-volatile memory circuits, as well as logic circuits. The volatile and non-volatile memory circuits may include static random-access memory (SRAM) circuits, dynamic random-access memory (DRAM) circuits, embedded DRAM (eDRAM) circuits, magnetic random-access memory (MRAM) circuits, embedded MRAM (eMRAM), or any suitable combination of these circuits.

公开(公告)号：WO2021173572A1

公开(公告)日：2021-09-02

申请号：PCT/US2021/019270

申请日：2021-02-23

Applicant: SUNRISE MEMORY CORPORATION

Inventor： NORMAN, Robert D. ,  CHERNICOFF, Richard S. ,  HARARI, Eli

IPC: G06F15/76 ,  G06F9/00

Abstract: A shared memory provides multi-channel access from multiple computing or host devices. A priority circuit prioritizes the multiple memory requests that are submitted as bids from the multiple host channels, such that those memory access requests that do not give rise to a conflict may proceed in parallel. The shared memory may be multi-ported and a routing circuit routes the prioritized memory access request to the appropriate memory ports where the allowed memory access requests may be carried out.

公开(公告)号：WO2021158994A1

公开(公告)日：2021-08-12

申请号：PCT/US2021/016923

申请日：2021-02-05

Applicant: SUNRISE MEMORY CORPORATION

Inventor： NORMAN, Robert D. ,  HARARI, Eli ,  QUADER, Khandker Nazrul ,  LEE, Frank Sai-keung ,  CHERNICOFF, Richard S. ,  KIM, Youn Cheul ,  MOFIDI, Mehrdad

IPC: G06F12/08

Abstract: A high-capacity system memory may be built from both quasi-volatile (QV) memory circuits, logic circuits, and static random-access memory (SRAM) circuits. Using the SRAM circuits as buffers or cache for the QV memory circuits, the system memory may achieve access latency performance of the SRAM circuits and may be used as code memory. The system memory is also capable of direct memory access (DMA) operations and includes an arithmetic logic unit for performing computational memory tasks. The system memory may include one or more embedded processor. In addition, the system memory may be configured for multi-channel memory accesses by multiple host processors over multiple host ports. The system memory may be provided in the dual-in-line memory module (DIMM) format.